公开(公告)号：US08628376B2

公开(公告)日：2014-01-14

申请号：US12610979

申请日：2009-11-02

申请人： Garrett H. Sin ,  Sanjeev Jain ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Garrett H. Sin ,  Sanjeev Jain ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B49/02 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.

摘要翻译： 描述形成裸硅衬底的方法。 测量裸硅衬底，其中通过非接触电容测量装置进行测量以获得衬底上的点处的信号。 由信号指示的信号或厚度被传送到控制器。 确定根据由信号指示的信号或厚度的调整的抛光参数。 在确定调整的抛光参数之后，使用调整的抛光参数在抛光机上抛光裸硅衬底。

公开(公告)号：US20080138988A1

公开(公告)日：2008-06-12

申请号：US11952777

申请日：2007-12-07

申请人： Jeffrey Drue David ,  Jun Qian ,  Garrett Sin ,  Daxin Mao ,  Chris Heung-Gyun Lee ,  Sivakumar Dhandapani ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Jun Qian ,  Garrett Sin ,  Daxin Mao ,  Chris Heung-Gyun Lee ,  Sivakumar Dhandapani ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Lakshmanan Karuppiah

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  H01L22/26

摘要： During polishing of a substrate, polysilicon can be removed from a surface of the substrate. Detecting an endpoint during polishing of polysilicon can include polishing the substrate having a polysilicon residue on an area of oxide area and optically detecting clearance of the polysilicon residue.

摘要翻译： 在抛光衬底期间，可以从衬底的表面去除多晶硅。 在研磨多晶硅期间检测端点可以包括在氧化物区域的区域上抛光具有多晶硅残渣的基板，并光学地检测多晶硅残渣的间隙。

公开(公告)号：US08554351B2

公开(公告)日：2013-10-08

申请号：US13599766

申请日：2012-08-30

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  B24B49/00 ,  G01B11/28

CPC分类号： G05B15/02 ,  B24B37/013 ,  B24B49/12

摘要： Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

摘要翻译： 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

公开(公告)号：US20120323355A1

公开(公告)日：2012-12-20

申请号：US13599766

申请日：2012-08-30

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G05B19/18

CPC分类号： G05B15/02 ,  B24B37/013 ,  B24B49/12

摘要： Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

摘要翻译： 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

公开(公告)号：US08260446B2

公开(公告)日：2012-09-04

申请号：US12699014

申请日：2010-02-02

申请人： Jeffrey Drue David ,  Dominic Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  B24B49/00 ,  G01B11/28

CPC分类号： G05B15/02 ,  B24B37/013 ,  B24B49/12

摘要： Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

摘要翻译： 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

公开(公告)号：US20100217430A1

公开(公告)日：2010-08-26

申请号：US12699014

申请日：2010-02-02

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00

CPC分类号： G05B15/02 ,  B24B37/013 ,  B24B49/12

摘要： Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

摘要翻译： 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

公开(公告)号：US20090149115A1

公开(公告)日：2009-06-11

申请号：US12203726

申请日：2008-09-03

申请人： Ignacio Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Ignacio Palou-Rivera ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00 ,  B24B49/10

CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B49/12

摘要： Systems and methods for performing one or more measurements of a substrate at one or more radii along the substrate are described. Thickness measurements taken at various radii along the substrate can be averaged together to obtain an average value that reflects an overall substrate thickness. A more accurate measurement of the overall substrate thickness can be obtained by performing multiple measurements and averaging the measurements together. Using the average value, polishing can be adjusted to ensure that the substrate achieves a desired planarized thickness profile.

摘要翻译： 描述了用于在沿着衬底的一个或多个半径处进行衬底的一个或多个测量的系统和方法。 可以将沿着衬底的不同半径处的厚度测量值一起平均，以获得反映整个衬底厚度的平均值。 通过执行多次测量并将测量值平均化可以获得整个基板厚度的更准确的测量。 使用平均值，可以调整抛光以确保基板达到期望的平坦化厚度分布。

公开(公告)号：US20090036026A1

公开(公告)日：2009-02-05

申请号：US12185719

申请日：2008-08-04

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： B24B49/04 ,  B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013 ,  B24B37/205 ,  B24B49/08 ,  B24D7/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L22/26

摘要： A computer program product that determines a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matches the spectra with indexes in a library and uses the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

摘要翻译： 确定抛光终点的计算机程序产品包括在抛光序列的不同时间内从基板上的不同区域获得光谱，将光谱与库中的索引匹配，并使用该指标来确定每个不同区域的抛光速率 指标。 可以为一个区域确定调整的抛光速率，这导致当达到抛光结束时间时，基板具有期望的轮廓。

公开(公告)号：US08210900B2

公开(公告)日：2012-07-03

申请号：US12263237

申请日：2008-10-31

申请人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

发明人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

公开(公告)号：US08586481B2

公开(公告)日：2013-11-19

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。