公开(公告)号：US11069814B2

公开(公告)日：2021-07-20

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun Sung ,  SeHee Park ,  Jiyong Noh ,  InTak Cho ,  PilSang Yun

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

公开(公告)号：US11063103B2

公开(公告)日：2021-07-13

申请号：US16666869

申请日：2019-10-29

Applicant: LG Display Co., Ltd.

Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US20200152913A1

公开(公告)日：2020-05-14

申请号：US16668262

申请日：2019-10-30

Applicant: LG Display Co., Ltd.

Inventor： Jiyong NOH ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

IPC: H01L51/52 ,  H01L27/12

Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

公开(公告)号：US10453944B2

公开(公告)日：2019-10-22

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  SeHee Park ,  HyungJoon Koo ,  Kwanghwan Ji ,  PilSang Yun

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

公开(公告)号：US10290658B2

公开(公告)日：2019-05-14

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.