公开(公告)号：US11735638B2

公开(公告)日：2023-08-22

申请号：US17505115

申请日：2021-10-19

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US11728436B2

公开(公告)日：2023-08-15

申请号：US17498246

申请日：2021-10-11

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/126 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/126 ,  H10K59/1213

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US11621356B2

公开(公告)日：2023-04-04

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20220123120A1

公开(公告)日：2022-04-21

申请号：US17505115

申请日：2021-10-19

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L29/43 ,  H01L27/146

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US11127353B2

公开(公告)日：2021-09-21

申请号：US16690815

申请日：2019-11-21

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  ChanYong Jeong ,  JuHeyuck Baeck ,  Kwangll Chun

IPC: G09G3/3241 ,  G09G3/3266 ,  H01L27/12

Abstract: A display device and a signal inversion device are provided. A display device includes: a display panel including: sub-pixels, and scan lines respectively connected to each of the sub-pixels, and light emission control lines respectively connected to each of the sub-pixels, a scan driver circuit for outputting respective scan signals to the scan lines, and a light emission control driver circuit for outputting respective light emission control signals to the light emission control lines, the light emission control driver circuit including: a resistance device electrically connected between: a first voltage node for receiving a first voltage, and an output node electrically connected to the light emission control lines, and a transistor electrically connected between the output node and a second voltage node for receiving a second voltage that is different from the first voltage, wherein an on/off operation of the transistor is controlled according to an input signal.