Integrated magnetic sensor for detecting vertical magnetic fields and manufacturing process thereof
    21.
    发明授权
    Integrated magnetic sensor for detecting vertical magnetic fields and manufacturing process thereof 有权
    用于检测垂直磁场的集成磁传感器及其制造工艺

    公开(公告)号:US08736262B2

    公开(公告)日:2014-05-27

    申请号:US13021573

    申请日:2011-02-04

    IPC分类号: G01R33/07

    CPC分类号: G01R33/07

    摘要: An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.

    摘要翻译: 一种形成在包括半导体材料的基板的主体中的集成磁传感器,其集成了霍尔单元。 在主体中形成沟槽,例如在基板的背面,并且由横向于主体的主面的方向延伸的侧面部分限定。 所述沟槽在垂直于所述主面的方向上的深度大于在所述侧表面部分之间平行于所述主体的主面的方向上的宽度。 由铁磁材料制成的集中器形成在沟槽内并且由两个铁磁区域构成,两个铁磁区域被设置成彼此间隔开一定距离并且沿沟槽的侧表面部分朝向第一霍尔室延伸。

    INTEGRATED MAGNETIC SENSOR FOR DETECTING HORIZONTAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF
    22.
    发明申请
    INTEGRATED MAGNETIC SENSOR FOR DETECTING HORIZONTAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF 有权
    用于检测水平磁场的集成磁传感器及其制造工艺

    公开(公告)号:US20110210722A1

    公开(公告)日:2011-09-01

    申请号:US12957175

    申请日:2010-11-30

    摘要: The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.

    摘要翻译: 用于检测外部磁场的集成磁传感器由具有表面的半导体材料体形成; 覆盖半导体材料体的绝缘层; 在身体内延伸的磁敏感区域,例如霍尔室; 以及在霍尔单元上延伸并且具有在绝缘层上平行于衬底的表面延伸的平面部分的铁磁材料的集中器。 集中器终止于朝向霍尔单元的平面部分周向地突出并且横向于平面部分突出的尖端。 当磁敏感区域是磁通门传感器的感测线圈时,它形成在衬底上,嵌入在绝缘层中,并且集中器的尖端可以达到传感线圈的距离。

    INTEGRATED MAGNETIC SENSOR FOR DETECTING VERTICAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF
    23.
    发明申请
    INTEGRATED MAGNETIC SENSOR FOR DETECTING VERTICAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF 有权
    用于检测垂直磁场的集成磁传感器及其制造工艺

    公开(公告)号:US20110193556A1

    公开(公告)日:2011-08-11

    申请号:US13021573

    申请日:2011-02-04

    IPC分类号: G01R33/06

    CPC分类号: G01R33/07

    摘要: An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.

    摘要翻译: 一种形成在包括半导体材料的基板的主体中的集成磁传感器,其集成了霍尔单元。 在主体中形成沟槽,例如在基板的背面,并且由横向于主体的主面的方向延伸的侧面部分限定。 所述沟槽在垂直于所述主面的方向上的深度大于在所述侧表面部分之间平行于所述主体的主面的方向上的宽度。 由铁磁材料制成的集中器形成在沟槽内并且由两个铁磁区域构成,两个铁磁区域被设置成彼此间隔开一定距离并且沿沟槽的侧表面部分朝向第一霍尔室延伸。

    Loop-type voltage regulating device
    24.
    发明授权
    Loop-type voltage regulating device 有权
    环型电压调节装置

    公开(公告)号:US06833688B2

    公开(公告)日:2004-12-21

    申请号:US09740737

    申请日:2000-12-18

    IPC分类号: H02H706

    摘要: A loop-type voltage regulating device, particularly for regulating a voltage of an automotive electric system that includes at least one thermal engine, a voltage regulator and an alternator operative to deliver a system regulated-voltage signal to and receive a regulation signal from the voltage regulator, the voltage regulating device including a control unit within the regulating loop, which unit is connected between the thermal engine and the voltage regulator and is adapted to supply the latter with a signal related to the engine operation.

    摘要翻译: 一种环路型电压调节装置,特别是用于调节汽车电气系统的电压,其包括至少一个热引擎,电压调节器和交流发电机,其可操作以将系统稳压电压信号传递到电压 电压调节装置包括调节回路内的控制单元,该单元连接在热力发动机和电压调节器之间,并且适于向后者提供与发动机操作相关的信号。

    Bidirectional electronic switch
    25.
    发明授权
    Bidirectional electronic switch 有权
    电控单元保护电路

    公开(公告)号:US06292341B1

    公开(公告)日:2001-09-18

    申请号:US09295842

    申请日:1999-04-21

    IPC分类号: H02H318

    CPC分类号: H03K17/0822

    摘要: A protection circuit of a diagnostic output line (K-line) of a control unit for protection of the control unit in the event of a ground disconnection or of a “below ground” condition is provided. The diagnostic output line includes a first interface DMOS transistor with a source connected to ground and a drain coupled to the diagnostic output line through a second DMOS transistor with a source connected to the output line and a drain connected to the source of the first DMOS transistor. The protection circuit also includes a comparator for the voltage of the diagnostic output line with the potential of the ground node, and a two-input logic gate, whose output controls a current generator forcing a current, limited by a resistor, on the diagnostic output line.

    摘要翻译: 提供用于在接地断开或“低于地面”情况下保护控制单元的控制单元的诊断输出线(K线)的保护电路。 诊断输出线包括具有源极连接到地的第一接口DMOS晶体管和通过连接到输出线的源极的第二DMOS晶体管耦合到诊断输出线的漏极,以及连接到第一DMOS晶体管的源极的漏极 。 保护电路还包括用于具有接地节点的电位的诊断输出线的电压的比较器,以及双输入逻辑门,其输出控制电流发生器强制由电阻器限制的电流在诊断输出端 线。

    Low-drop voltage regulator
    26.
    发明授权
    Low-drop voltage regulator 失效
    低压稳压器

    公开(公告)号:US5373225A

    公开(公告)日:1994-12-13

    申请号:US941665

    申请日:1992-09-08

    IPC分类号: G05F1/56 H02J1/00

    CPC分类号: G05F1/56

    摘要: A low-drop voltage regulator includes a P-type power transistor having an input terminal connected to a supply source, an output terminal connected to a load, and a control terminal driven by the output of an operational amplifier having its non-inverting input connected to a reference voltage source and its inverting input connected to the output terminal of the power transistor. To improve the regulation characteristics of the regulator without jeopardizing stability, even under normally critical conditions, provision is made for a feedback network including a capacitive component between the output and inverting input of the operational amplifier.

    摘要翻译: 一个低压降稳压器包括一个P型功率晶体管,它具有一个连接到一个电源的输入端,一个连接到一个负载的输出端,以及一个由其同相输入连接的运算放大器的输出驱动的控制端 到参考电压源,其反相输入连接到功率晶体管的输出端。 为了在不危及稳定性的情况下改善调节特性,即使在正常临界条件下,也提供了包括运算放大器的输出和反相输入之间的电容分量的反馈网络。

    H-bridge circuit with protection against crossover conduction
    27.
    发明授权
    H-bridge circuit with protection against crossover conduction 失效
    H桥电路,防止交叉传导

    公开(公告)号:US5309347A

    公开(公告)日:1994-05-03

    申请号:US947105

    申请日:1992-09-18

    摘要: An H-bridge circuit which includes four power transistors (an npn pull-down and a pnp pull-up for each of the output terminals). Two control circuits are connected to drive these transistors in a complementary crossover configuration, so that each control circuit can turn on the pull-up transistor on one side of the load and the pull-down transistor on the opposite side of the load. Each of the power transistors is paralleled (base-to-base) by a smaller transistor which provides a scaled current output (proportional to that of the corresponding power transistor) to the opposite control circuit. The control circuit includes static current-thresholding disable logic, which prevents turn-on until the currents through the opposite power devices have declined to threshold levels. Thus, as long as either control circuit is driving one of the pull-up transistors into in the on-state, the other control circuit will not be able to turn on the pull-down transistor which is in series with the active pull-up transistor. This efficiently prevents any condition of unlimited crowbar current, without adding any excess delay or causing any high-impedance condition at the output.

    摘要翻译: 一个H桥电路,包括四个功率晶体管(npn下拉和每个输出端子的pnp上拉)。 连接两个控制电路以以互补的交叉配置驱动这些晶体管,使得每个控制电路可以在负载的一侧上的上拉晶体管和负载的相对侧上的下拉晶体管导通。 每个功率晶体管由较小的晶体管并联(基极到基极),其提供与相对的控制电路成比例的电流输出(与对应的功率晶体管成比例)。 控制电路包括静态电流阈值禁用逻辑,其可以防止导通,直到通过相对的功率器件的电流已经下降到阈值电平。 因此,只要任一控制电路将上拉晶体管中的一个驱动到导通状态,则另一控制电路将不能接通与有源上拉串联的下拉晶体管 晶体管。 这有效地防止了无限制的撬棒电流的任何条件,而不会增加任何超出延迟或在输出端引起任何高阻抗条件。

    Electronic circuit for amplitude variation and level displacement of a
signal
    28.
    发明授权
    Electronic circuit for amplitude variation and level displacement of a signal 失效
    用于信号幅度变化和电平位移的电子电路

    公开(公告)号:US4595846A

    公开(公告)日:1986-06-17

    申请号:US558882

    申请日:1983-12-07

    申请人: Marco Morelli

    发明人: Marco Morelli

    CPC分类号: H03G7/001 F02P7/067 H03K5/01

    摘要: A first circuit branch subjected to an input voltage and including a first resistance and a second circuit branch subjected to a reference voltage and including a second resistance are connected to a coupling circuit, which is responsive to the current circulating in the first branch to cause a current of the same value to circulate in the second branch. An output voltage taken at a point between said coupling circuit and said second resistance constitutes the modified signal.

    摘要翻译: 经受输入电压并且包括第一电阻的第一电路分支和受到参考电压并包括第二电阻的第二电路分支连接到耦合电路,耦合电路响应于在第一分支中循环的电流而导致 电流的相同值在第二个分支中循环。 在所述耦合电路和所述第二电阻之间的点处获得的输出电压构成修改的信号。

    Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof
    29.
    发明授权
    Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof 有权
    用于检测水平磁场的集成磁传感器及其制造工艺

    公开(公告)号:US08633688B2

    公开(公告)日:2014-01-21

    申请号:US12957175

    申请日:2010-11-30

    IPC分类号: G01R33/02

    摘要: The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.

    摘要翻译: 用于检测外部磁场的集成磁传感器由具有表面的半导体材料体形成; 覆盖半导体材料体的绝缘层; 在身体内延伸的磁敏感区域,例如霍尔室; 以及在霍尔单元上延伸并且具有在绝缘层上平行于衬底的表面延伸的平面部分的铁磁材料的集中器。 集中器终止于朝向霍尔单元的平面部分周向地突出并且横向于平面部分突出的尖端。 当磁敏感区域是磁通门传感器的感测线圈时,它形成在衬底上,嵌入在绝缘层中,并且集中器的尖端可以达到传感线圈的距离。

    INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    30.
    发明申请
    INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    集成磁传感器,特别是三轴磁传感器及其制造方法

    公开(公告)号:US20130299930A1

    公开(公告)日:2013-11-14

    申请号:US13996922

    申请日:2011-12-23

    IPC分类号: G01R33/00 H01L43/12

    摘要: An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

    摘要翻译: 在第一表面上由绝缘层覆盖半导体材料的衬底的集成磁阻器件。 铁磁材料的磁阻在绝缘层中延伸并限定传感器的灵敏度平面。 铁磁材料的集中器,包括至少一个臂,沿横向方向延伸到灵敏平面并垂直偏移到磁电阻。 以这种方式,垂直于灵敏度平面指向的磁通线被集中和偏转,以便产生指向与灵敏平面平行的方向的磁场分量。