公开(公告)号：US20120318999A1

公开(公告)日：2012-12-20

申请号：US13580318

申请日：2011-03-03

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： G01T1/16

CPC分类号： G01T7/005 ,  A61B6/586 ,  G01T1/247 ,  H04N5/32 ,  H04N5/367 ,  H04N17/002

摘要： Disclosed is a two-dimensional X-ray detector array inspection method capable of recognizing two-dimensional X-ray detector arrays unsuitable for X-ray imaging by means of identifying quickly growing defective pixels. The two-dimensional X-ray detector array inspection method involves a bias voltage step for repeated supply and stopping of a bias voltage from a common electrode; a dark current value measurement step for measuring the pixel values of pixels in a non-X-ray-irradiating state; a defective pixel identification step for identifying defective pixels on the basis of the pixel values of the pixels measured in the dark current value measurement step; and a determination step for determining whether or not the two-dimensional X-ray array detector is suitable on the basis of the size of the missing pixel chunks or the total number of defective pixels identified in defective pixel identification step.

摘要翻译： 公开了一种二维X射线检测器阵列检查方法，其能够通过识别快速增长的缺陷像素来识别不适合于X射线成像的二维X射线检测器阵列。 二维X射线检测器阵列检查方法包括用于从公共电极重复供给和停止偏置电压的偏置电压步骤; 用于测量非X射线照射状态下的像素的像素值的暗电流值测量步骤; 用于基于在暗电流值测量步骤中测量的像素的像素值来识别缺陷像素的缺陷像素识别步骤; 以及确定步骤，用于基于缺陷像素块的大小或在缺陷像素识别步骤中识别的缺陷像素的总数来确定二维X射线阵列检测器是否合适。

公开(公告)号：US08327703B2

公开(公告)日：2012-12-11

申请号：US12504123

申请日：2009-07-16

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： G01C19/56

CPC分类号： G01C19/5649 ,  G01C19/56 ,  G01C19/5719

摘要： An angular velocity detection circuit is connected to a resonator for making excited vibration on the basis of a drive signal and detects an angular velocity. The angular velocity detection circuit includes: a self-vibration component extraction unit that receives, from the resonator, a detection signal including an angular velocity component based on a Coriolis force and a self-vibration component based on the excited vibration of the resonator and extracts the self-vibration component from the detection signal; a direct-current conversion unit including an integration unit that integrates an output signal of the self-vibration component extraction unit; and an offset addition unit that adds an offset value to an output signal of the direct-current conversion unit.

摘要翻译： 角速度检测电路连接到谐振器，用于基于驱动信号进行激励振动并检测角速度。 角速度检测电路包括：自振部件提取单元，其从谐振器接收包括基于科里奥利力的角速度分量的检测信号和基于共振器的激发振动的提取物的自振分量 检测信号的自振分量; 直流转换单元，其包括积分单元，其对自振部件提取单元的输出信号进行积分; 以及偏移加法单元，其将偏移值与直流转换单元的输出信号相加。

公开(公告)号：US08324556B2

公开(公告)日：2012-12-04

申请号：US12936559

申请日：2009-04-07

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： H01L27/146

CPC分类号： H01L27/14618 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film.This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.

摘要翻译： 本发明的放射线检测器具有设置在辐射敏感半导体层，载体选择性高电阻膜和公共电极的露出表面之间的绝缘非胺阻挡层和可固化合成树脂膜。 该阻挡层可以进一步抑制半导体层与可固化合成树脂膜之间的化学反应，并且可以防止流过半导体层的暗电流的增加。 由于在阻挡层和半导体层之间不发生化学反应，所以半导体层不会劣化。 此外，通过设置在可固化合成树脂膜的上表面上的辅助板，可以制造由于温度变化而没有翘曲和破裂的辐射检测器。

公开(公告)号：US20120279494A1

公开(公告)日：2012-11-08

申请号：US13520258

申请日：2011-01-18

申请人： Makoto Kitano ,  Kenji Sato ,  Kentaro Nariai ,  Tatsuya Oka

发明人： Makoto Kitano ,  Kenji Sato ,  Kentaro Nariai ,  Tatsuya Oka

IPC分类号： B01J19/00

CPC分类号： C13K1/02 ,  C13K13/002

摘要： The hot water-flowing type saccharification apparatus (A) which hydrolyzes a raw material organic substance (X) stored in a reaction pipe (1) by passing pressurized hot water therethrough, includes a raw material hopper (4) which stores the raw material organic substance (X), a raw material-feeding pipe (3) which receives the raw material organic substance (X) dropped from the raw material hopper (4) and communicates with the reaction pipe (1), a raw material transfer unit (5) which transfers the raw material organic substance (X) to the reaction pipe (1) by extruding the raw material organic substance (X) from one end of the raw material-feeding pipe (3) toward the reaction pipe (1), a shutoff valve (2) provided between the raw material-feeding pipe (3) and the reaction pipe (1), a residue discharge unit (6) provided in the reaction pipe (1) on an opposite side to the raw material-feeding pipe (3) so as to discharge a residue (Xa) outside, a pressurized hot water supply unit (7) which supplies pressurized hot water to one end of the reaction pipe (1), and a liquid recovery unit (8) which recovers the pressurized hot water together with a decomposition liquid from the other end of the reaction pipe (1). According to the present invention, a hot water-flowing type saccharification apparatus with which an efficient operation as an industrial process apparatus is possible can be provided.

摘要翻译： 通过使加压的热水通过其中水解反应管（1）中储存的原料有机物（X）的热水流型糖化装置（A）包括原料料斗（4），其储存有机原料 物料（X），原料供给管（3），其接收从原料料斗（4）滴落并与反应管（1）连通的原料有机物（X），原料转移单元 ）通过从原料供给管（3）的一端向反应管（1）挤出原料有机物（X）将原料有机物（X）转移到反应管（1）， 设置在原料供给管（3）和反应管（1）之间的截止阀（2），设置在反应管（1）的与原料供给管的相反侧的残渣排出单元（6） （3），以将残留物（Xa）排出到外部，加压热水供应单元（7） 向反应管（1）的一端供给加压热水;以及液体回收单元（8），其与来自反应管（1）的另一端的分解液一起回收加压的热水。 根据本发明，可以提供一种能够作为工业处理装置的有效操作的热水流型糖化装置。

公开(公告)号：US08294365B2

公开(公告)日：2012-10-23

申请号：US12918175

申请日：2009-09-17

申请人： Shougo Nasu ,  Hisayo Oohata ,  Kenji Sato ,  Syouzou Ninomiya ,  Kenji Hasegawa

发明人： Shougo Nasu ,  Hisayo Oohata ,  Kenji Sato ,  Syouzou Ninomiya ,  Kenji Hasegawa

IPC分类号： H01J17/49

CPC分类号： H01J11/42 ,  H01J11/12 ,  H01J11/36 ,  H01J11/40

摘要： A plasma display panel has a front substrate, a rear substrate, and a phosphor layer. The front substrate has a dielectric layer formed so as to cover a plurality of display electrodes disposed on a substrate, and a protective layer formed on the dielectric layer. The rear substrate is faced to the front substrate so as to form discharge space, has data electrodes in the direction intersecting with the display electrodes, and has barrier ribs for partitioning the discharge space. The phosphor layer is formed by applying phosphor ink that is made of a phosphor material and dispersant between the barrier ribs of the rear substrate. Nano-particles with a diameter of a range of 1 nm to 100 nm inclusive, or a solvent having an affinity for the dispersant of the phosphor ink is applied to the surfaces of the barrier ribs, and then the phosphor ink is applied to them, thereby forming the phosphor layer.

摘要翻译： 等离子体显示面板具有前基板，后基板和荧光体层。 前基板具有形成为覆盖设置在基板上的多个显示电极和形成在电介质层上的保护层的电介质层。 后基板面向前基板以形成放电空间，在与显示电极相交的方向上具有数据电极，并且具有用于分隔放电空间的阻挡肋。 荧光体层通过在后基板的隔壁之间施加由荧光体材料和分散剂制成的荧光体墨形成。 将直径为1nm〜100nm的纳米粒子或对荧光体墨水的分散剂具有亲和性的溶剂施加到隔壁的表面，然后向其施加荧光体墨水， 从而形成荧光体层。

公开(公告)号：US08284807B2

公开(公告)日：2012-10-09

申请号：US12865779

申请日：2008-12-09

申请人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

发明人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00

CPC分类号： H01S5/141 ,  H01S5/0617 ,  H01S5/06255 ,  H01S5/06837 ,  H01S5/0687

摘要： An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.

摘要翻译： 本发明的目的是提供一种波长可调谐激光装置及其波长改变方法，该激光装置防止波长变化时的跳网。 根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外，波长可调激光装置101包括相位控制单元111，其同时控制施加到 半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。 因此，可以实现暗调。

公开(公告)号：US20120251426A1

公开(公告)日：2012-10-04

申请号：US13515426

申请日：2010-10-20

申请人： Kenji Sato

发明人： Kenji Sato

IPC分类号： C01B33/021 ,  C01B33/02

CPC分类号： B22D25/02

摘要： The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x≦5.0, 20≦y≦100 and x×y≦100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (μm) applied to the mold.

摘要翻译： 本发明提供一种制备具有表面层的多晶硅的方法，其中基本上消除了由于Fe而具有短载流子寿命的区域。 1.一种多晶硅的制备方法，其特征在于，制备均匀地涂敷有通过将粘合剂和溶剂与氮化硅粉末混合而制成的脱模剂的模具，然后使所述模具中的熔融硅固化，其中，x＆lt; 5.0,20＆amp; nlE; y＆ 并且x表示在氮化硅粉末中作为杂质含有的Fe（原子ppm）的浓度，y表示施加到模具上的脱模剂的厚度（μm），x×y＆nlE; 100。

公开(公告)号：US20120224856A1

公开(公告)日：2012-09-06

申请号：US13508721

申请日：2010-09-28

申请人： Kenji Sato ,  Shinya Sudo

发明人： Kenji Sato ,  Shinya Sudo

IPC分类号： H04J14/00

CPC分类号： H04B10/5053 ,  G02F2203/56 ,  H04B10/516

摘要： The present invention has an object to provide an optical modulation device and an optical modulation method that achieve an excellent spectral efficiency with a simple and compact configuration and low power consumption. An optical modulation device according to an exemplary aspect of the present invention includes a CW light source (11), a coupler (12), optical modulators (14a) and (14b), an optical frequency shifter (15b), a serial-to-parallel converter (21), and a delay circuit (24a). The serial-to-parallel converter (21) divides a data signal having a bit rate B into two data strings having a bit rate B/2, and extracts a clock signal (CLK). The delay circuit (24a) temporally synchronizes the two data strings. CW light emitted from the CW light source is split into two beams by the coupler (12). The optical modulators (14a) and (14b) generate optical signals by modulating the two split light beams according to the data strings. The optical frequency shifter (15b) shifts center frequencies of the optical signals by Δf=B/(2×2) according to the clock signal (CLK).

摘要翻译： 本发明的目的是提供一种光调制装置和光调制方法，其以简单紧凑的结构和低功耗实现了优异的光谱效率。 根据本发明的示例性方面的光调制装置包括CW光源（11），耦合器（12），光调制器（14a）和（14b），光移频器（15b），串 - 并联转换器（21）和延迟电路（24a）。 串行到并行转换器（21）将具有比特率B的数据信号分成具有比特率B / 2的两个数据串，并提取时钟信号（CLK）。 延迟电路（24a）在时间上同步两个数据串。 从CW光源发射的CW光被耦合器（12）分成两束。 光调制器（14a）和（14b）通过根据数据串调制两个分束光束来产生光信号。 光移位器（15b）根据时钟信号（CLK）将光信号的中心频率移位＆Dgr; f = B /（2×2）。

公开(公告)号：US20110236297A1

公开(公告)日：2011-09-29

申请号：US13158618

申请日：2011-06-13

申请人： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

发明人： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

IPC分类号： C01B19/04

CPC分类号： C30B29/48 ,  C30B33/02 ,  H01L21/477

摘要： The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.

摘要翻译： 本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内 的温度为700℃，N 2; T1＆nlE; 1250℃，第二热处理温度T2设定在T2＆lt; 1N; T1-50的范围内。

公开(公告)号：US20110212272A1

公开(公告)日：2011-09-01

申请号：US13049250

申请日：2011-03-16

申请人： Tsutomu NISHIHASHI ,  Kazuhiro Watanabe ,  Tadashi Morita ,  Kenji Sato ,  Tsutomu Tanaka ,  Takuya Uzumaki

发明人： Tsutomu NISHIHASHI ,  Kazuhiro Watanabe ,  Tadashi Morita ,  Kenji Sato ,  Tsutomu Tanaka ,  Takuya Uzumaki

IPC分类号： C23C14/04

CPC分类号： G11B5/855

摘要： A magnetic recording medium having a high magnetic pattern contrast is manufactured. By changing an acceleration voltage that accelerates ions in a process gas, depths (peak depths D0 and D1) from a magnetic layer 44, at which an injection amount of a target element is the maximum, can be made with set depths even if a film thickness of an ion permeation portion 48, which is a thin film portion of a resist 49, decreases. Since the set depths are achieved for the peak depths D0 and D1, a portion to be processed 43 of the magnetic film 44 is made non-magnetized from a top surface to a bottom surface, and a magnetic portion is separated; thus, the magnetic recording medium with a high magnetic pattern contrast can be obtained.

摘要翻译： 制造具有高磁性图案对比度的磁记录介质。 通过改变加速工艺气体中的离子的加速电压，即使目标元素的注入量最大的磁性层44的深度（峰值深度D0和D1）也可以设定深度，即使是膜 作为抗蚀剂49的薄膜部分的离子透过部分48的厚度减小。 由于对于峰值深度D0和D1实现了设定深度，所以使磁性膜44的被处理部分43从顶面到底面不被磁化，并且磁性部分被分离; 因此，可以获得具有高磁性图案对比度的磁记录介质。