Abstract:
A digital system includes nonvolatile memory for storing digital data using codewords. The data is stored in the memory using multiple bits per memory cell of the memory. A code efficiency, for purposes of transferring read data and write data relating to the memory, can be changed on a codeword-to-codeword basis based on input parameters.
Abstract:
An apparatus for performing secure operations with a dedicated secure processor is described in one embodiment. The apparatus includes security firmware defining secure operations, a processor configured to execute the security firmware and perform a set of operations limited to the secure operations, and a plurality of secure hardware registers, accessible by the processor and configured to receive instructions to perform the secure operations. An apparatus for performing secure operations with a plurality of security assist hardware circuits is described in another embodiment. The apparatus comprises one or more secure hardware registers configured to receive a command to perform secure operations and one or more security assist hardware circuits configured to perform discrete secure operations using one or more secret data objects.
Abstract:
A system uses multi-level encoding where each symbol of a plurality of symbols represents more than one bit of information in a user data symbol stream for transfer using a multilevel transmission channel. The user data symbols are represented in a digital bitwise form such that each symbol is presented as a plurality of bits and each bit is subject to a different probability of error. An error correction procedure is applied based on the different error probability that is associated with each bit in the plurality. The channel can be configured to support a mosaic tile structure, each tile containing a channel symbol such that a selected tile has a collective error probability that is different from other tiles. Customized coding can be applied to the tile structure to allocate a selected amount of error correction power to the selected tile based on an overall available correction power.
Abstract:
A read/write arrangement is described for use in accessing at least one nonvolatile memory device in read/write operations with the memory device being made up of a plurality of memory cells which memory cells are organized as a set of pages that are physically and sequentially addressable with each page having a page length such that a page boundary is defined between successive ones of the pages in the set. The read/write arrangement includes a control arrangement that is configured to store and access a group of data blocks that is associated with a given write operation in a successive series of pages of the memory such that at least an initial page in the series is filled and each block includes a block length that is different than the page length.