公开(公告)号：US06730983B2

公开(公告)日：2004-05-04

申请号：US09960333

申请日：2001-09-24

申请人： Yoshihiro Minami

发明人： Yoshihiro Minami

IPC分类号： H01L2900

CPC分类号： H01L28/10 ,  H01F17/0006 ,  H01F41/042 ,  H01F2017/0046 ,  H01L27/08

摘要： A spiral inductor comprising: a substrate; a protruding portion which is formed on the top face of the substrate and the top of which serves as a dummy element for controlling a chemical mechanical polishing process; and a conductive layer which is formed on the substrate so as to have a spiral shape and which serves as an induction element, wherein the protruding portion is formed in a region other than a region directly below the conductive layer.

摘要翻译： 一种螺旋电感器，包括：基板; 形成在所述基板的上表面上的突出部，其顶部作为用于控制化学机械研磨的哑元件; 以及导电层，其形成在所述基板上以具有螺旋形状并且用作感应元件，其中所述突出部分形成在除了所述导电层正下方的区域之外的区域中。

公开(公告)号：US06716087B2

公开(公告)日：2004-04-06

申请号：US09839240

申请日：2001-04-23

申请人： Naoto Miyashita ,  Yoshihiro Minami

发明人： Naoto Miyashita ,  Yoshihiro Minami

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B37/04

摘要： A dresser is used which makes it possible to simultaneously dress and condition the surface of a polishing pad deteriorated by polishing a semiconductor wafer in the CMP process. The dresser is a dresser comprised of a ceramic such as dressing SiC, SiN, alumina or silica. Use of this dresser enables to shorten the time of dressing/conditioning the deteriorated polishing pad.

摘要翻译： 使用修整器，其使得可以通过在CMP工艺中抛光半导体晶片来同时修整和调节抛光垫的表面劣化的表面。 修整器是由诸如修整SiC，SiN，氧化铝或二氧化硅的陶瓷组成的修整器。 使用这种修整器可以缩短修整/调理劣化的抛光垫的时间。

公开(公告)号：US5960286A

公开(公告)日：1999-09-28

申请号：US848187

申请日：1997-04-29

申请人： Yoshihiro Minami ,  Shigeru Hasegawa ,  Hiroshi Takenaka ,  Tsuneo Ogura ,  Shinji Sato

发明人： Yoshihiro Minami ,  Shigeru Hasegawa ,  Hiroshi Takenaka ,  Tsuneo Ogura ,  Shinji Sato

IPC分类号： H01L21/8234 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/84 ,  H01L21/8234 ,  H01L21/8249 ,  H01L27/1203 ,  Y10S438/975

摘要： A method of manufacturing power semiconductor device, having an area of 3 cm.sup.2 or more, comprises the step of preparing a power semiconductor device divided into cell blocks and forming power semiconductor elements whose minimum linewidth is less than 10 .mu.m and having at least main electrodes completed in the cell blocks, the step of determining cell blocks having faulty portions, and the step of selectively electrically separating the main electrodes in the faulty cell blocks from the main electrodes in the good cell blocks.

摘要翻译： 一种面积为3cm 2以上的功率半导体装置的制造方法，其特征在于，包括以下步骤：准备分为电池块的功率半导体装置，形成最小线宽小于10μm的功率半导体元件，并具有至少主电极 在单元块中完成的步骤，确定具有故障部分的单元块的步骤，以及将故障单元块中的主电极与良好单元块中的主电极选择性地电分离的步骤。