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26 条记录 (耗时 0.032 秒)

    BLOW MOLDING DEVICE AND METHOD FOR MANUFACTURING A CONTAINER
    21.
    发明申请
    BLOW MOLDING DEVICE AND METHOD FOR MANUFACTURING A CONTAINER 有权
    吹塑设备及制造集装箱的方法

    公开(公告)号：US20150246475A1

    公开(公告)日：2015-09-03

    申请号：US14431063

    申请日：2013-08-01

    申请人： Kenichi SUYAMA ,  Nobuyuki TAMURA ,  Sumito SATO

    发明人： Kenichi Suyama ,  Nobuyuki Tamura ,  Sumito Sato

    IPC分类号： B29C49/28

    CPC分类号： B29C49/28 ,  B29C49/06 ,  B29C49/12 ,  B29C49/4289 ,  B29C49/58 ,  B29C2049/4294 ,  B29C2049/465 ,  B29C2049/4664 ,  B29C2049/5803 ,  B29L2031/7158 ,  B67C2003/227

    摘要： Provided is a method for manufacturing a synthetic resin container, including: after the shaping of a container, drawing back a liquid inside the container to a pressurized liquid feeding unit side by a suckback mechanism disposed at a predetermined position in a feeding channel of the liquid from the pressurized liquid feeding unit to a mouth tube portion of a preform; closing the feeding channel by means of a valve mechanism disposed on the downstream side of the suckback mechanism; introducing a gas into the container so that the volume reduction deformation of the container resulting from the drawing back of the liquid is restored to its original shape; and adjusting a headspace inside the container with the amount of volume change associated with the volume reduction deformation.

    摘要翻译： 本发明提供一种合成树脂容器的制造方法，其特征在于，在容器成形后，通过设置在所述液体的供给通道中的预定位置的反吸器机构将容器内的液体拉回到加压液体供给单元侧 从加压液体供给单元到预成型件的口管部分; 通过设置在反吸机构的下游侧的阀机构关闭进给通道; 将气体引入容器中，使得由液体拉出而产生的容器的体积减小变形恢复到其初始形状; 以及与容积减小变形相关联的体积变化量调节容器内的顶部空间。

    AIR-CONDITIONING SYSTEM AND CONTROL DEVICE THEREOF
    22.
    发明申请
    AIR-CONDITIONING SYSTEM AND CONTROL DEVICE THEREOF 审中-公开
    空调系统及其控制装置

    公开(公告)号：US20110303406A1

    公开(公告)日：2011-12-15

    申请号：US13154838

    申请日：2011-06-07

    申请人： Jun Takeda ,  Nobuyuki Tamura ,  Tadashi Katsui ,  Masamichi Iwasaki ,  Shinji Mizumura ,  Hideo Okoshi

    发明人： Jun Takeda ,  Nobuyuki Tamura ,  Tadashi Katsui ,  Masamichi Iwasaki ,  Shinji Mizumura ,  Hideo Okoshi

    IPC分类号： G05D23/00 ,  H05K7/20

    CPC分类号： H05K7/20745 ,  H05K7/20836

    摘要： A computer room air-conditioning system includes a temperature detection unit which is provided for each of a front and a back of each rack, and measures air temperatures of the front and the back; and a control device for acquiring a measured temperature by each temperature detection unit, and performing control based on the measured temperature. With the configuration, the control device includes a temperature difference calculation unit for calculating a temperature difference between cool air at the front and warm air at the back of each rack based on each measured and acquired temperature; and a heating element cooling control unit for controlling by adjustment an amount of flow of cool air from the underfloor space to the computer room based on the calculated temperature difference.

    摘要翻译： 计算机室空调系统包括为每个机架的前后设置的温度检测单元，并且测量前后的空气温度; 以及控制装置，用于通过每个温度检测单元获取测量的温度，并且基于测量的温度进行控制。 通过该结构，控制装置具有：温度差计算部，其根据各测定和获取的温度，计算前端的冷空气与后方的暖风的温度差; 以及加热元件冷却控制单元，用于基于计算出的温差来调节从地板下空间到计算机室的冷气流量。

    Semiconductor device and fabrication method thereof
    23.
    发明申请
    Semiconductor device and fabrication method thereof 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20070278589A1

    公开(公告)日：2007-12-06

    申请号：US11654672

    申请日：2007-01-18

    申请人： Nobuyuki Tamura ,  Jun Suzuki

    发明人： Nobuyuki Tamura ,  Jun Suzuki

    IPC分类号： H01L31/00

    CPC分类号： H01L21/823807 ,  H01L27/092 ,  H01L29/7843

    摘要： A semiconductor device includes: an NMIS transistor on an NMIS region of a semiconductor substrate; a PMIS transistor on a PMIS region of the semiconductor substrate; and a stress dielectric film continuously provided on the semiconductor substrate to cover the NMIS transistor and PMIS transistor, the stress dielectric film having internal stress, wherein part of the stress dielectric film extending over the NMIS region has tensile internal stress compared to part of the stress dielectric film extending over the PMIS region.

    摘要翻译： 半导体器件包括：在半导体衬底的NMIS区域上的NMIS晶体管; 在半导体衬底的PMIS区域上的PMIS晶体管; 以及在半导体衬底上连续地设置以覆盖NMIS晶体管和PMIS晶体管的应力介电膜，该应力介电膜具有内部应力，其中在NMIS区域上延伸的应力介电膜的部分具有与部分应力相比的拉伸内应力 电介质膜延伸在PMIS区域上。

    Nonvolatile semiconductor memory device and method for driving the same
    25.
    发明授权
    Nonvolatile semiconductor memory device and method for driving the same 有权

    公开(公告)号：US06657893B2

    公开(公告)日：2003-12-02

    申请号：US10050965

    申请日：2002-01-22

    申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    IPC分类号： G11C1604

    CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

    摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.