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26 条记录 (耗时 0.041 秒)

    Strut mount
    4.
    发明授权
    Strut mount 有权
    支柱安装

    公开(公告)号：US07350779B2

    公开(公告)日：2008-04-01

    申请号：US11222972

    申请日：2005-09-12

    申请人： Nobuyuki Tamura

    发明人： Nobuyuki Tamura

    IPC分类号： F16F7/00 ,  F16F9/54

    CPC分类号： B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/45 ,  B60G2204/4502

    摘要： A strut mount capable of reducing the weight and of intensifying the strength and having a good durability is provided. It comprises an inner cylinder, a vibration isolating base body and a pair of upper and lower brackets. The lower bracket is fabricated from aluminum alloy and includes a peripheral wall portion, a bottom wall portion and a first attachment flange while the upper bracket includes a second attachment flange and a lid wall portion. The first attachment flange has plural first through-holes for inserting plural attachment members, the second attachment flange has plural second through-holes for inserting the plural attachment members, and flange portions around the first through-holes of the first attachment flange bulge at their undersides to form respective thick-walled portions.

    摘要翻译： 提供了能够减轻重量并增强强度并具有良好耐久性的支柱安装件。 它包括内筒，隔振基体和一对上下托架。 下支架由铝合金制成，并且包括周壁部分，底壁部分和第一附接凸缘，而上托架包括第二附接凸缘和盖壁部分。 第一安装凸缘具有用于插入多个安装构件的多个第一通孔，第二安装凸缘具有用于插入多个安装构件的多个第二通孔，并且在第一安装凸缘的第一安装凸缘的第一通孔周围的凸缘部分 下面形成相应的厚壁部分。

    Transmission apparatus and a method for transmitting data in a data transmission system
    6.
    发明授权
    Transmission apparatus and a method for transmitting data in a data transmission system 失效

    公开(公告)号：US06992977B2

    公开(公告)日：2006-01-31

    申请号：US10036278

    申请日：2001-11-07

    申请人： Nobuyuki Tamura ,  Hiroaki Nagao ,  Sotohiro Kobayashi

    发明人： Nobuyuki Tamura ,  Hiroaki Nagao ,  Sotohiro Kobayashi

    IPC分类号： H04L1/00

    CPC分类号： H04L12/6418 ,  H04L41/064

    摘要： A transmission apparatus includes a reception line selecting unit, a communication confirming frame transmitting unit, a communication confirming table, and a reception line deciding unit. The reception line selecting unit selects one of several reception lines each formed by the synchronous network. The frame transmitting unit transmits a communication confirming frame to the synchronous network at least at a predetermined period. The communication confirming table stores each reception time of the communication confirming frame received through the synchronous network. The deciding unit decides occurrence of failure on the reception line corresponding to the reception time when a difference between a reception time stored in the table and a present time at the predetermined period exceeds a predetermined value, and transmits instructions for switching the reception line to the reception line selecting unit.

    Method for fabricating semiconductor device using a CVD insulator film
    7.
    发明授权
    Method for fabricating semiconductor device using a CVD insulator film 有权
    使用CVD绝缘膜制造半导体器件的方法

    公开(公告)号：US06472281B2

    公开(公告)日：2002-10-29

    申请号：US09238584

    申请日：1999-01-28

    申请人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

    发明人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

    IPC分类号： H01L21336

    CPC分类号： H01L29/66825 ,  H01L21/2652 ,  H01L21/28273 ,  H01L21/31612 ,  H01L29/6656 ,  H01L29/6659

    摘要： A gate insulator film and a gate electrode are formed on an Si substrate, and a CVD insulator film is deposited thereon to cover the gate electrode. Then, arsenic ions are implanted into the Si substrate from above the CVD insulator film to form LDD layers. After sidewall spacers have been formed over the side faces of the gate electrode with the CVD insulator film interposed therebetween, source/drain layers are formed. Since the LDD layers are formed by implanting dopant ions through the CVD insulator film, the passage of arsenic ions through the ends of the gate electrode can be suppressed. As a result, a semiconductor device suitable for miniaturization can be formed, while suppressing deterioration in insulating properties of the gate oxide film due to the passage of dopant ions through the ends of the gate electrode.

    摘要翻译： 在Si衬底上形成栅极绝缘体膜和栅电极，并在其上沉积CVD绝缘膜以覆盖栅电极。 然后，从CVD绝缘膜上方将砷离子注入Si衬底中以形成LDD层。 在栅电极的侧面上形成有侧壁间隔物之后，CVD绝缘体膜之间形成有源极/漏极层。 由于通过CVD绝缘膜注入掺杂剂离子形成LDD层，因此能够抑制砷离子通过栅电极的端部。 结果，可以形成适合于小型化的半导体器件，同时抑制由于掺杂剂离子通过栅电极的端部而导致的栅极氧化膜的绝缘性能的劣化。

    System for connection and disconnection in multipoint conference system of cascade configuration
    8.
    发明授权
    System for connection and disconnection in multipoint conference system of cascade configuration 失效
    级联配置多点会议系统连接断开系统

    公开(公告)号：US5737010A

    公开(公告)日：1998-04-07

    申请号：US333507

    申请日：1994-11-02

    申请人： Takako Yachi ,  Nobuyuki Tamura ,  Kazuto Ban ,  Tohru Andoh

    发明人： Takako Yachi ,  Nobuyuki Tamura ,  Kazuto Ban ,  Tohru Andoh

    IPC分类号： H04N7/15

    CPC分类号： H04N7/152

    摘要： A system for connection and disconnection in a multipoint conference system of a cascade configuration, wherein when a list of line numbers of the MCUs and terminals engaging in the conference is input from an input unit of an MCU, a call origination/disconnection table is prepared comprised of the line numbers. When the table is prepared, a call origination/disconnection administrative unit identifies the terminals under the MCU and the other adjoining MCUs, calls and establishes a connection through lines, and, when the connections are completed, circulates a call origination/disconnection table to the other connected MCUs. These MCUs in turn then calls their terminals and their adjoining MCUs and so on until the end MCUs. Further, use is made of a connection list in which connection flags and the order of connection are successively written and use is made of a conference configuration list indicating the actual connections of the MCUs. This enables all the television conference terminals to be automatically connected and disconnected from a single location and enables MCUs which have become unnecessary to be automatically recognized and disconnected.

    摘要翻译： 一种用于级联配置的多点会议系统中的连接和断开的系统，其中当从MCU的输入单元输入参与会议的MCU和终端的线路列表时，准备呼叫发起/断开表 由行号组成。 当准备表时，呼叫发起/断开管理单元识别MCU下的终端和其他相邻的MCU，通过线路呼叫和建立连接，并且当连接完成时，将呼叫发起/断开连接表循环到 其他连接的MCU。 这些MCU然后又呼叫其终端及其邻接的MCU等等，直到结束MCU。 此外，使用其中连接标志和连接顺序被连续写入的连接列表，并且使用指示MCU的实际连接的会议配置列表。 这使得所有电视会议终端能够从单个位置自动连接和断开连接，并且使得不必要的MCU被自动识别和断开。

    BLOW MOLDING DEVICE AND A METHOD FOR MANUFACTURING A BLOW MOLDED CONTAINER
    9.
    发明申请
    BLOW MOLDING DEVICE AND A METHOD FOR MANUFACTURING A BLOW MOLDED CONTAINER 有权
    吹塑设备和制造吹塑容器的方法

    公开(公告)号：US20140353884A1

    公开(公告)日：2014-12-04

    申请号：US14368967

    申请日：2012-10-22

    申请人： Sumito Sato ,  Nobuyuki Tamura ,  Takeshi Nagashima

    发明人： Sumito Sato ,  Nobuyuki Tamura ,  Takeshi Nagashima

    IPC分类号： B29C49/48 ,  B29C49/12 ,  B29C49/28

    CPC分类号： B29C49/4802 ,  B29C49/06 ,  B29C49/12 ,  B29C49/28 ,  B29C49/58 ,  B29C2049/5803 ,  B29K2101/12 ,  B29L2031/712 ,  B29L2031/7158

    摘要： To effectively prevent a mouth portion of a preform from being deformed and enlarged in diameter during blow molding, provided is a blow molding device that includes: a blow mold inside which a cavity is provided for accommodating therein a preform, except for a mouth portion which is an orifice end of the preform, the preform being preformed in a bottomed tubular shape; a blow nozzle provided to supply a pressurized fluid into the preform through the mouth portion of the preform; a partition wall member that tightly surrounds an outer wall surface of the mouth portion of the preform; with space being formed between the partition wall member and the outer wall surface; and a pressurized fluid supply unit that supplies a pressurized fluid into the space during blow molding.

    摘要翻译： 为了有效地防止预成型件的口部在吹塑成型期间变形和扩大直径，提供了一种吹塑装置，其包括：吹塑模具，其内设置有用于容纳预成型件的空腔，除了口部 是预成型件的孔口端，预成型件预成型为有底的管状形状; 喷嘴，其设置成通过预成型件的口部将加压流体供应到预成型件中; 分隔壁构件，其紧密地围绕所述预成型体的口部的外壁表面; 在所述分隔壁构件和所述外壁面之间形成有空间; 以及加压流体供应单元，其在吹塑成型期间将加压流体供应到所述空间中。

    Semiconductor device and fabrication method thereof
    10.
    发明授权
    Semiconductor device and fabrication method thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US07812374B2

    公开(公告)日：2010-10-12

    申请号：US11819369

    申请日：2007-06-27

    申请人： Nobuyuki Tamura ,  Ken Suzuki ,  Katsuhiro Ootani

    发明人： Nobuyuki Tamura ,  Ken Suzuki ,  Katsuhiro Ootani

    IPC分类号： H01L29/772

    CPC分类号： H01L21/823807 ,  H01L29/7843 ,  Y10S438/938

    摘要： A semiconductor device includes a first MIS transistor on a first active region of a semiconductor substrate, the first MIS transistor including: a first gate insulating film provided on the first active region; a first gate electrode provided on the first gate insulating film; a first stressor insulating film provided on an upper face and side faces facing in a gate length direction of the first gate electrode such that first stress acts on a channel of the first MIS transistor in the gate length direction; and a first base insulating film provided on side faces of the first gate electrode facing in a gate width direction, wherein the side faces of the first gate electrode facing in the gate width direction are not covered with the first stressor insulating film.

    摘要翻译： 半导体器件包括在半导体衬底的第一有源区上的第一MIS晶体管，第一MIS晶体管包括：设置在第一有源区上的第一栅极绝缘膜; 设置在所述第一栅极绝缘膜上的第一栅电极; 第一应力绝缘膜，设置在上表面和面对第一栅电极的栅极长度方向的侧面，使得第一应力作用在栅极长度方向上的第一MIS晶体管的沟道上; 以及第一基极绝缘膜，其设置在所述第一栅电极的面对栅极宽度方向的侧面上，其中所述第一栅电极的面对栅极宽度方向的侧面未被所述第一应力绝缘膜覆盖。