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    ELASTIC WAVE DEVICE
    21.
    发明申请
    ELASTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20190089330A1

    公开(公告)日：2019-03-21

    申请号：US16125800

    申请日：2018-09-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mari SAJI

    IPC: H03H9/145 ,  H03H9/02 ,  H03H9/25

    Abstract: An elastic wave device includes a piezoelectric substrate mainly including lithium niobate, an interdigital transducer electrode provided on the piezoelectric substrate, and a dielectric film, provided on the piezoelectric substrate and covering the interdigital transducer electrode, and mainly including silicon oxide. The elastic wave device uses a Rayleigh wave. The interdigital transducer electrode includes main electrode layers that include one or more first main electrode layer made of a metal with a C112/C12 ratio greater than the C112/C12 ratio of the silicon oxide with regard to the elastic constants C11 and C12. The sum of the thicknesses of the one or more first main electrode layers is about 55% or more based on the thickness of the whole interdigital transducer electrode is about 100%.

    COMPOSITE FILTER DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE
    23.
    发明申请
    COMPOSITE FILTER DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE 审中-公开

    公开(公告)号：US20190007030A1

    公开(公告)日：2019-01-03

    申请号：US16125885

    申请日：2018-09-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mari SAJI ,  Junpei YASUDA

    IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H01Q1/50

    Abstract: A composite filter device includes an antenna common terminal, a first band pass filter having a first pass band, and a second band pass filter having a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an elastic wave resonator. The elastic wave resonator includes a LiNbO3 substrate, an IDT electrode on the LiNbO3 substrate, and a dielectric film that covers the IDT electrode and includes a silicon oxide as a main component. When f1′ is the frequency of a Sezawa wave of the first band pass filter and f2 is the center frequency of the second pass band, f1′ is located at a different position from f2.

    COMPOSITE FILTER DEVICE
    24.
    发明申请
    COMPOSITE FILTER DEVICE 审中-公开

    公开(公告)号：US20180375492A1

    公开(公告)日：2018-12-27

    申请号：US16052672

    申请日：2018-08-02

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mari SAJI

    IPC: H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03H9/02

    Abstract: A composite filter device for use in carrier aggregation includes a first bandpass filter connected to an antenna common terminal and including a first pass band, and a second bandpass filter including a second pass band of a higher frequency than the first pass band. The first bandpass filter includes an LiNbO3 substrate, an IDT electrode which is provided on the LiNbO3 substrate and defines the first bandpass filter, and a dielectric film which covers the IDT electrode and includes silicon oxide as a main component. The first bandpass filter is defined by at least one elastic wave resonator, and a Rayleigh wave propagating in the LiNbO3 substrate is used and an acoustic velocity of a Sezawa wave in the elastic wave resonator is equal to or higher than about 4643.2 m/sec.

    SURFACE ACOUSTIC WAVE DEVICE
    27.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 有权
    表面声波设备

    公开(公告)号：US20130069481A1

    公开(公告)日：2013-03-21

    申请号：US13674114

    申请日：2012-11-12

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Tetsuya KIMURA ,  Yasuyuki IDA ,  Mari SAJI

    IPC: H01L41/107

    CPC classification number: H01L41/107 ,  H03H9/14541

    Abstract: A surface acoustic wave device includes a piezoelectric substrate including a groove located in a surface thereof, an IDT electrode, and a dielectric film. The IDT electrode includes a first electrode layer located in the groove and a second electrode layer located outside the groove. The dielectric film is arranged on the piezoelectric substrate so as to cover the IDT electrode. The second electrode layer is tapered toward a side opposite to the piezoelectric substrate.

    Abstract translation: 表面声波装置包括压电基板，其包括位于其表面中的凹槽，IDT电极和电介质膜。 IDT电极包括位于槽中的第一电极层和位于槽外部的第二电极层。 电介质膜设置在压电基板上以覆盖IDT电极。 第二电极层朝向与压电基板相反的一侧逐渐变细。

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