公开(公告)号：US20250087552A1

公开(公告)日：2025-03-13

申请号：US18963083

申请日：2024-11-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI ,  Atsushi KUROKAWA ,  Hiroshi YAMADA

IPC: H01L23/373 ,  H01L23/00 ,  H01L27/12

Abstract: At least one of transistors is in a device layer. A plurality of bumps are on one surface of the device layer. An insulating layer is on a surface of the device layer opposite to the surface having the plurality of bumps. The heat transfer layer is in contact with a surface of the insulating layer opposite to a surface on which the device layer is disposed. The heat transfer layer is formed of an insulating material having a thermal conductivity higher than a thermal conductivity of the insulating layer. When the device layer is viewed in plan view, one first transistor of the transistors includes a non-overlapping portion which is a portion not overlapping with the plurality of bumps, and the heat transfer layer is continuous from a portion overlapping with the non-overlapping portion to a portion overlapping with at least one of the plurality of bumps.

公开(公告)号：US20190149125A1

公开(公告)日：2019-05-16

申请号：US16155927

申请日：2018-10-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI

IPC: H03H9/145 ,  H03H9/25

Abstract: An elastic wave device includes a high-acoustic-velocity member, a low-acoustic-velocity film, a piezoelectric film, and am interdigital transducer electrode stacked in this order. The interdigital transducer electrode includes an intersecting region and outer edge regions. The intersecting region includes a central region located in the middle of the intersecting region in the direction in which electrode fingers extend and the inner edge regions located at the respective outer side portions of the central region. The electrode fingers in the inner edge regions have a larger thickness than in the central region. Each electrode finger has an incrased thickness portion. The increased thickness portion is made of a metal having a density d of about 5.5 g/cm3 or more and has a film thickenss equal to or smaller than a wavelength-normalized film thickness represented by T (%)=−0.1458d+4.8654.

公开(公告)号：US20230412144A1

公开(公告)日：2023-12-21

申请号：US18240960

申请日：2023-08-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI

IPC: H03H9/145 ,  H03H9/02 ,  H03H9/25

CPC classification number: H03H9/14541 ,  H03H9/02559 ,  H03H9/02637 ,  H03H9/02866 ,  H03H9/25 ,  H03H9/02834 ,  H03H9/02818 ,  H10N30/877

Abstract: An elastic wave device includes a piezoelectric substrate mainly including lithium niobate, an interdigital transducer electrode provided on the piezoelectric substrate, and a dielectric film, provided on the piezoelectric substrate and covering the interdigital transducer electrode, and mainly including silicon oxide. The elastic wave device uses a Rayleigh wave. The interdigital transducer electrode includes main electrode layers that include one or more first main electrode layer made of a metal with a C112/C12 ratio greater than the C112/C12 ratio of the silicon oxide with regard to the elastic constants C11 and C12. The sum of the thicknesses of the one or more first main electrode layers is about 55% or more based on the thickness of the whole interdigital transducer electrode is about 100%.

公开(公告)号：US20190149128A1

公开(公告)日：2019-05-16

申请号：US16159762

申请日：2018-10-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI ,  Hideki IWAMOTO

IPC: H03H9/72 ,  H03H9/02 ,  H04B1/10

Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode on the piezoelectric substrate, the piezoelectric substrate including a piezoelectric layer and a high-acoustic-velocity member layer, the piezoelectric layer being stacked on the high-acoustic-velocity member layer. The piezoelectric layer is made of lithium tantalate. Denoting an elastic wave propagation direction as a first direction, and a direction perpendicular or substantially perpendicular to the first direction as a second direction, a central region, low-acoustic-velocity regions, and high-acoustic-velocity regions are provided in the interdigital transducer electrode in the second direction. The low-acoustic-velocity regions include mass-adding films on electrode fingers. Denoting a film thickness normalized to a wavelength determined by the electrode finger pitch of the interdigital transducer electrode as a wavelength-normalized film thickness (%), a product of the wavelength-normalized film thickness of the mass-adding films and the density (g/cm3) of the mass-adding films is about 13.4631 or less.

公开(公告)号：US20190149126A1

公开(公告)日：2019-05-16

申请号：US16159787

申请日：2018-10-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI

IPC: H03H9/72 ,  H03H9/145 ,  H03H9/02 ,  H04B1/18 ,  H03H9/64

CPC classification number: H03H9/14541 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/6406 ,  H03H9/6423 ,  H04B1/18

Abstract: An elastic wave device includes a piezoelectric substrate made of lithium niobate, an interdigital transducer electrode on the piezoelectric substrate, and a silicon oxide layer that covers the interdigital transducer electrode. The interdigital transducer electrode includes an AlCu layer and a metal layer disposed closer to the piezoelectric substrate than the AlCu layer, the metal layer having a higher density than the silicon oxide layer. The AlCu layer has a Cu concentration of about 13% or more by weight.

公开(公告)号：US20190067551A1

公开(公告)日：2019-02-28

申请号：US16051522

申请日：2018-08-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI

IPC: H01L41/08 ,  H03H9/25 ,  H03H9/54 ,  H01L41/187 ,  H03H9/02

Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer (IDT) electrode. The IDT electrode is disposed on the piezoelectric substrate and includes an electrode layer including molybdenum as a main component. The duty ratio of the IDT electrode is about 0.3 to about 0.48.

公开(公告)号：US20250096070A1

公开(公告)日：2025-03-20

申请号：US18964045

申请日：2024-11-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/14 ,  H01L23/29 ,  H01L23/367

Abstract: A semiconductor device is flip-chip mounted on a mounting substrate. A mold resin seals the semiconductor device. An insulating heat transfer member having a thermal conductivity higher than a thermal conductivity of the mold resin is on a surface of the semiconductor device facing the mounting substrate. The semiconductor device includes a device layer including a transistor, a plurality of bumps that are on a surface of the device layer facing the mounting substrate and are connected to the mounting substrate, and an insulating layer that is on a surface of the device layer opposite to the surface facing the mounting substrate. When the mounting substrate is viewed in plan view, the transistor has a non-overlapping portion that does not overlap with any of the bumps. The heat transfer member is continuous from a region overlapping with the non-overlapping portion to at least one of the bumps.

公开(公告)号：US20240421795A1

公开(公告)日：2024-12-19

申请号：US18813289

申请日：2024-08-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI ,  Takashi YAMANE

IPC: H03H9/05 ,  H03H3/08 ,  H03H9/08 ,  H03H9/10 ,  H03H9/25

Abstract: A semiconductor element having a structure in which a wiring layer, an element formation layer, and a first insulating layer are stacked is mounted on a first surface of a module substrate in a state where the wiring layer faces the module substrate. The electronic component is mounted on the first surface of the module substrate. A resin layer is on the first surface of the module substrate. First and second recessed portions are in the resin layer, a semiconductor element is in the first recessed portion, and the electronic component is in the second recessed portion. When the first surface is set as a height reference, an upper surface of the resin layer includes a region which is higher than or equal to heights of an upper surface of the semiconductor element and an upper surface of the electronic component, around the semiconductor element and the electronic component.

公开(公告)号：US20240047398A1

公开(公告)日：2024-02-08

申请号：US18489540

申请日：2023-10-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Atsushi KUROKAWA ,  Mari SAJI

IPC: H01L23/00 ,  H01L29/737 ,  H01L29/73 ,  H01L29/732 ,  H01L25/065

CPC classification number: H01L24/13 ,  H01L24/29 ,  H01L29/737 ,  H01L29/7317 ,  H01L29/7325 ,  H01L25/0657 ,  H01L2924/13051 ,  H01L2225/06517 ,  H01L2924/014 ,  H01L2224/1302 ,  H01L2224/13007 ,  H01L2224/29022 ,  H01L2224/29005

Abstract: A semiconductor device includes a semiconductor substrate; at least one first transistor, each first transistor including a mesa structure including one or more semiconductor layers; a first bump overlapping the first transistors and extending in a first direction; and a second bump. The mesa structure includes a first end portion at one end in a second direction and a second end portion at another end in the second direction. In plan view, an outer periphery of the first bump includes a first side and a second side extending in the first direction and arranged next to each other in the second direction. The first side is closer to the second bump than the second side in the second direction. The first end portion and the second end portion of the mesa structure are between the first side and the second side.

公开(公告)号：US20190097604A1

公开(公告)日：2019-03-28

申请号：US16132508

申请日：2018-09-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Mari SAJI ,  Ryo NAKAGAWA ,  Hideki IWAMOTO

IPC: H03H9/25 ,  H03H9/02

Abstract: An elastic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer. The piezoelectric layer is made of lithium tantalate, the IDT electrode includes metal layers including an Al metal layer and a metal layer having a higher density than Al. Expression 1 is satisfied: 301.74667−10.83029×TLT−3.52155×TELE+0.10788×TLT2 +0.01003×TELE2 +0.03989×TLT×TELE≥0 expression 1, where λ represents a wavelength defined by an electrode finger pitch of the IDT electrode, TLT (%) represents a normalized film thickness of the piezoelectric layer to the wavelength λ, and TELE (%) represents a normalized film thickness of the IDT electrode in terms of Al to the wavelength λ.