MEMS DEVICE
    1.
    发明申请

    公开(公告)号:US20210146402A1

    公开(公告)日:2021-05-20

    申请号:US17161726

    申请日:2021-01-29

    摘要: A MEMS device includes a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in a membrane portion. The first electrode is covered with the first layer and includes a recess. The piezoelectric layer includes a through hole that passes through the piezoelectric layer between a surface of the piezoelectric layer, which is opposite to the first direction, and the recess at a position corresponding to at least a portion of the first electrode.

    ELASTIC WAVE DEVICE, FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

    公开(公告)号:US20190238114A1

    公开(公告)日:2019-08-01

    申请号:US16375871

    申请日:2019-04-05

    IPC分类号: H03H9/145 H03H9/02 H03H9/64

    摘要: An elastic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction. The piezoelectric substrate includes a groove extending along the elastic wave propagation direction. The groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the electrode fingers are located.

    ACOUSTIC WAVE DEVICE
    5.
    发明申请

    公开(公告)号:US20230015397A1

    公开(公告)日:2023-01-19

    申请号:US17946574

    申请日:2022-09-16

    IPC分类号: H03H9/02 H03H9/13 H03H9/56

    摘要: An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

    ACOUSTIC WAVE DEVICE
    6.
    发明申请

    公开(公告)号:US20220216844A1

    公开(公告)日:2022-07-07

    申请号:US17704519

    申请日:2022-03-25

    摘要: An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.

    ACOUSTIC WAVE DEVICE
    7.
    发明申请

    公开(公告)号:US20210305964A1

    公开(公告)日:2021-09-30

    申请号:US17345238

    申请日:2021-06-11

    IPC分类号: H03H9/02

    摘要: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is directly or indirectly provided on the support substrate. The IDT electrode includes a plurality of electrode fingers and is provided on a main surface of the piezoelectric layer. The thickness of the piezoelectric layer is about 1λ or less when a wavelength of an acoustic wave determined by an electrode finger period of the IDT electrode is defined as λ. The support substrate is an A-plane sapphire substrate.

    PIEZOELECTRIC DEVICE
    8.
    发明申请

    公开(公告)号:US20210152149A1

    公开(公告)日:2021-05-20

    申请号:US17161727

    申请日:2021-01-29

    摘要: A piezoelectric device includes a membrane portion and a piezoelectric layer made of single crystal of a piezoelectric body. At least a portion of the piezoelectric layer is included in the membrane portion. An electrode is provided on a surface of the piezoelectric layer in the membrane portion. The piezoelectric layer includes a first polarization region in a first polarization state and a second polarization region in a second polarization state, and the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.

    ELASTIC WAVE DEVICE
    9.
    发明申请
    ELASTIC WAVE DEVICE 审中-公开

    公开(公告)号:US20180301616A1

    公开(公告)日:2018-10-18

    申请号:US15942594

    申请日:2018-04-02

    摘要: An elastic wave device that utilizes a longitudinal wave leaky elastic wave includes a first medium layer, a second medium layer stacked on the first medium layer either directly or indirectly and that is a silicon oxide layer, a piezoelectric film stacked on the second medium layer either directly or indirectly, and an IDT electrode disposed on the piezoelectric film either directly or indirectly. In the elastic wave device, ρ1×C11, which is a product of a density ρ1 (kg/m3) of the first medium layer and an elastic constant C11 of the first medium layer, is larger than ρ0×C11, which is a product of a density ρ0 (kg/m3) of the piezoelectric film and an elastic constant C11 of the piezoelectric film.

    ELASTIC WAVE DEVICE AND LADDER FILTER

    公开(公告)号:US20230053722A1

    公开(公告)日:2023-02-23

    申请号:US17975928

    申请日:2022-10-28

    IPC分类号: H03H9/02 H03H9/13 H03H9/56

    摘要: An elastic wave device includes a piezoelectric film made of lithium niobate or lithium tantalate, and a first electrode finger and a second electrode finger opposing each other in a direction intersecting a thickness direction of the piezoelectric film. When an average thickness of the piezoelectric film is d and a distance between centers of the first electrode finger and the second electrode finger is p, d/p is about 0.5 or less. The first electrode finger and the second electrode finger are connected to the first and second bus bars, respectively. The first and second bus bars include corner portions. At least one of corner portions of the first and second bus bars is outside a cavity portion when viewed in plan view.