公开(公告)号：US08164946B2

公开(公告)日：2012-04-24

申请号：US12839947

申请日：2010-07-20

申请人： Kei Hirata

发明人： Kei Hirata

IPC分类号： G11C11/00

CPC分类号： H01F1/0081 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/025 ,  H01F10/3254 ,  H01F10/329 ,  Y10S977/933

摘要： A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and extends through a hole of each the at least one carbon nanotube with both ends being electrically connected to the pair of electrodes, respectively. The junction layer is made of a non-magnetic material and disposed between one of the pair of electrodes and one end of each the at least one nanowire. The one of the pair of electrodes is made of a ferromagnetic material. Magnetization of the at least one nanowire is reversed by spin injection performed through the junction layer with the one of the pair of electrodes. When a DC bias current and a detection current having a frequency coinciding with a magnetic resonance frequency of the nanowire are applied in a superimposed manner, between the electrodes, within a range not reaching a critical current density of the magnetization reversal, the pair of electrodes have a voltage corresponding to a magnetization direction of the nanowire.

摘要翻译： 磁记忆元件包括一对电极，接合层，至少一个碳纳米管和至少一个纳米线。 所述至少一个纳米线由铁磁材料制成并且延伸穿过每个所述至少一个碳纳米管的孔，其两端分别电连接到所述一对电极。 接合层由非磁性材料制成并且设置在一对电极中的一个和每个至少一个纳米线的一端之间。 一对电极中的一个由铁磁材料制成。 至少一个纳米线的磁化通过与该对电极之一的结层进行的自旋注入反转。 当直流偏置电流和具有与纳米线的磁共振频率一致的频率的检测电流以叠加方式施加在电极之间时，在不达到磁化反转的临界电流密度的范围内，该对电极 具有与纳米线的磁化方向对应的电压。

公开(公告)号：US07876537B2

公开(公告)日：2011-01-25

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US07782575B2

公开(公告)日：2010-08-24

申请号：US11698180

申请日：2007-01-26

申请人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： G11B5/59683 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.

摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

公开(公告)号：US20100152368A1

公开(公告)日：2010-06-17

申请号：US12067821

申请日：2006-09-21

申请人： Yoshio Hirayama ,  Kei Hirata ,  Koichi Wada ,  Kenji Shachi

发明人： Yoshio Hirayama ,  Kei Hirata ,  Koichi Wada ,  Kenji Shachi

IPC分类号： C08L47/00

CPC分类号： C08L21/00 ,  C08K3/36 ,  C08K5/548 ,  C08L9/00 ,  C08L13/00 ,  C08L15/00 ,  C08L2666/02

摘要： The present invention relates to a rubber composition comprising 100 parts by mass of a solid diene-based rubber (1), 5 to 150 parts by mass of silica (2), 0.1 to 50 parts by mass of a liquid diene-based rubber (3) which is modified with an unsaturated carboxylic acid and/or derivative thereof and has a number average molecular weight of 5000 to 100000, and further 0,1 to 50 parts by mass of an unmodified liquid diene-based rubber (4) having a number average molecular weight of 5000 to 100000 with respect to 100 parts by mass of the solid diene-based rubber (1) and/or 1.5 to 14.0 parts by mass of water (5) with respect to 100 parts by mass of silica (2), and a crosslinked product obtained by crosslinking the rubber composition.A rubber composition obtained by the present invention is improved in processability when silica is added and mixed with a diene-based rubber and is excellent in dynamic properties after crosslinking.

摘要翻译： 本发明涉及一种橡胶组合物，其包含100质量份固体二烯系橡胶（1），5〜150质量份二氧化硅（2），0.1〜50质量份液态二烯系橡胶（ 3），其用不饱和羧酸和/或其衍生物改性，数均分子量为5000〜100000，进一步为0.1〜50质量份未改性的液体二烯类橡胶（4），其具有 相对于100质量份的固体二烯系橡胶（1），数均分子量为5000〜100000，和/或相对于100质量份的二氧化硅（2）为1.5〜14.0质量份的水（5） ）和通过使橡胶组合物交联而得到的交联物。 通过本发明获得的橡胶组合物在加入二氧化硅并与二烯系橡胶混合时的加工性提高，交联后的动态性能优异。

公开(公告)号：US07679861B2

公开(公告)日：2010-03-16

申请号：US11591504

申请日：2006-11-02

申请人： Kei Hirata ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Kiyoshi Noguchi

IPC分类号： G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A pole layer incorporates a track width defining portion and a wide portion. The track width defining portion has an end face that is located in the medium facing surface and that defines the track width. The maximum width of the wide portion is greater than the track width and equal to or greater than the length of the wide portion taken in the direction orthogonal to the medium facing surface. When the coil is generating no magnetic field, in the end face of the track width defining portion, there exist first and second regions in which the directions of components of magnetization orthogonal to the medium facing surface are opposite.

摘要翻译： 极层包括轨道宽度限定部分和宽部分。 轨道宽度限定部分具有位于介质面向表面中并限定轨道宽度的端面。 宽部分的最大宽度大于轨道宽度，并且等于或大于在与面向介质的表面正交的方向上拍摄的宽部分的长度。 当线圈不产生磁场时，在轨道宽度限定部分的端面中，存在第一和第二区域，其中与面向介质的表面正交的磁化分量的方向相反。

公开(公告)号：US07672092B2

公开(公告)日：2010-03-02

申请号：US11708537

申请日：2007-02-21

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/12 ,  Y10T428/1121

摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

摘要翻译： 一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层 这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。 间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或由 其合金。

公开(公告)号：US07672085B2

公开(公告)日：2010-03-02

申请号：US11626562

申请日：2007-01-24

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： G11B5/4826 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.

摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层， 其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3）制成，或者半导体氧化物层包含氧化铟（In 2 O 3）作为其主要成分，并且包含含有SnO 4的四价阳离子的氧化物 作为主要成分的氧化铟。 因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性 的电影特色。

公开(公告)号：US07663845B2

公开(公告)日：2010-02-16

申请号：US11616503

申请日：2006-12-27

申请人： Kei Hirata ,  Koji Shimazawa ,  Atsushi Yamaguchi ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Koji Shimazawa ,  Atsushi Yamaguchi ,  Kiyoshi Noguchi

IPC分类号： G11B5/11 ,  G11B5/39

CPC分类号： G11B5/3912

摘要： A current-perpendicular-to-plane magneto-resistive element includes a magneto-resistive film and a pair of upper and lower magnetic shielding films holding the magneto-resistive film therebetween for current feeding. The lower magnetic shielding film has an at least two-layer structure including a crystalline material layer and an amorphous material layer disposed below the crystalline material layer.

摘要翻译： 电流 - 垂直于平面的磁阻元件包括磁阻膜和一对上下磁屏蔽膜，其在其间保持用于电流馈送的磁阻膜。 下磁屏蔽膜具有至少两层结构，包括结晶材料层和设置在结晶材料层下方的无定形材料层。

公开(公告)号：US20090237839A1

公开(公告)日：2009-09-24

申请号：US12052633

申请日：2008-03-20

申请人： Kei Hirata ,  Satoshi Miura ,  Tomohito Mizuno ,  Takeo Kagami

发明人： Kei Hirata ,  Satoshi Miura ,  Tomohito Mizuno ,  Takeo Kagami

IPC分类号： G11B5/60 ,  G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/08

摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface.

摘要翻译： 磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层，所述第一非磁性中间层允许所述第一磁性层和所述第二磁性层交换耦合，使得其磁化方向与每个磁性层反平行 另外当不施加磁场时; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层，所述第二非磁性中间层在所述第二磁性层和所述第三磁性层之间产生磁阻效应; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，其设置在所述磁阻堆叠的与空气支承表面相反的一侧上，所述偏磁层在与所述空气轴承表面垂直的方向上向所述磁阻堆叠施加偏置磁场。

公开(公告)号：US20090129820A1

公开(公告)日：2009-05-21

申请号：US12128665

申请日：2008-05-29

申请人： Hirohisa KOHNO ,  Kazunori Koshimori ,  Kei Hirata ,  Akihide Kawamura ,  Naoya Iwata ,  Keisuke Kubo ,  Takashi Sakamoto ,  Taiyou Uehara ,  Toshikazu Tsumita ,  Takeshi Okoshi ,  Tomio Onuki

发明人： Hirohisa KOHNO ,  Kazunori Koshimori ,  Kei Hirata ,  Akihide Kawamura ,  Naoya Iwata ,  Keisuke Kubo ,  Takashi Sakamoto ,  Taiyou Uehara ,  Toshikazu Tsumita ,  Takeshi Okoshi ,  Tomio Onuki

IPC分类号： G03G15/08

CPC分类号： G03G15/0893 ,  G03G15/0877 ,  G03G2215/0822

摘要： There is provided a development apparatus including: a first developer storage container and a second developer storage container that store developer, having a first a and second openings, respectively; a first transport member provided within the first developer storage container, and that causes the developer to move to the second developer storage container via the first opening; a second transport member provided within the second developer storage container, and that causes the developer to move to the first developer storage container via the second opening; a developer holding member that performs development by causing the developer to move to a position facing an image holding body on which a latent image is formed; and a moving member provided so as to fit between an inner wall face of the second developer storage container and an outer edge of the second transport member.

摘要翻译： 提供了一种显影装置，包括：第一显影剂储存容器和第二显影剂储存容器，其分别存储具有第一和第二开口的显影剂; 设置在第一显影剂储存容器内并使显影剂经由第一开口移动到第二显影剂储存容器的第一输送构件; 设置在第二显影剂储存容器内并使显影剂经由第二开口移动到第一显影剂储存容器的第二输送构件; 显影剂保持构件，其通过使显影剂移动到面向其上形成有潜像的图像保持体的位置来进行显影; 以及移动构件，其设置成配合在第二显影剂储存容器的内壁面和第二输送构件的外边缘之间。