公开(公告)号：US20110152691A1

公开(公告)日：2011-06-23

申请号：US13060704

申请日：2010-06-04

申请人： Masako Ikeda ,  Takashi Ogura

发明人： Masako Ikeda ,  Takashi Ogura

IPC分类号： A61B8/14 ,  B29C39/12 ,  B29C47/00

CPC分类号： B06B1/0677 ,  A61B8/00 ,  A61B8/4405 ,  A61B8/4455 ,  G01N29/0672 ,  G10K11/002

摘要： An ultrasonic transducer includes: a piezoelectric transducer (1) emitting ultrasonic waves; and a backing layer (4) provided in contact with a back side of the piezoelectric transducer (1) and attenuating ultrasonic waves that are emitted toward the back side of the piezoelectric transducer (1) and have an opposite phase to the phase of ultrasonic waves emitted toward a front side of the piezoelectric transducer (1). The acoustic tubes (5) are disposed in the backing layer (4) such that a longitudinal direction of each acoustic tube (5) is in line with a traveling direction of the ultrasonic waves emitted by the piezoelectric transducer (1) toward the front and the back side. The acoustic tubes (5) have mutually different lengths on the basis of a principle of an acoustic wave synthesis, and attenuate in whole or in part the ultrasonic waves emitted by the piezoelectric transducer (1) toward the backing layer (4).

摘要翻译： 超声换能器包括：发射超声波的压电换能器（1） 以及设置成与所述压电换能器（1）的背面接触并且衰减朝向所述压电换能器（1）的背侧发射并且与超声波的相位相反的超声波的背衬层（4） 朝向压电换能器（1）的前侧发射。 声管（5）设置在背衬层（4）中，使得每个声管（5）的纵向方向与压电换能器（1）朝向前方发射的超声波的行进方向一致，以及 背面。 声管（5）基于声波合成的原理具有相互不同的长度，并且将压电换能器（1）发射的超声波全部或部分衰减到背衬层（4）。

公开(公告)号：US07947568B2

公开(公告)日：2011-05-24

申请号：US12548471

申请日：2009-08-27

申请人： Keiji Sakamoto ,  Takashi Ogura ,  Masashige Moritoki

发明人： Keiji Sakamoto ,  Takashi Ogura ,  Masashige Moritoki

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.

摘要翻译： 制造半导体器件的方法包括在衬底中形成STI沟槽的工艺，在STI沟槽的侧壁和底表面上形成热氧化膜的工艺，在表面上进行等离子体处理的工艺 位于STI沟槽的底部的热氧化膜，以及使用CVD法在STI沟槽中形成绝缘膜的工序。

公开(公告)号：US20080203500A1

公开(公告)日：2008-08-28

申请号：US12071126

申请日：2008-02-15

申请人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

发明人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

IPC分类号： H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/78

摘要： A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.

摘要翻译： 一种设置有MIS型场效应晶体管的半导体器件，包括硅衬底，具有通过含硅绝缘膜形成在硅衬底上的高介电常数金属氧化物膜的栅极绝缘膜，含硅栅电极 形成在所述栅极绝缘膜上的侧壁，以及在所述栅电极的侧面上包含氧化硅作为构成材料的侧壁，其中，所述侧壁与所述栅电极的至少所述侧面之间插入有氮化硅膜。 该半导体器件尽管具有栅极长度小的精细结构，但能够实现低功耗和快速操作。

公开(公告)号：US20060068538A1

公开(公告)日：2006-03-30

申请号：US11233648

申请日：2005-09-23

申请人： Takashi Ogura

发明人： Takashi Ogura

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/66681 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/7816

摘要： A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在形成高耐压MOS晶体管的区域的外延层的顶表面上沉积氧化硅膜的步骤; 随后根据低耐压MOS晶体管的栅极氧化膜的厚度在外延层的顶表面上沉积氧化硅膜的步骤; 以及通过蚀刻并通过离子注入法形成P型扩散层，随后调整高耐压MOS晶体管的顶表面上的氧化硅膜的厚度的步骤。 该方法可以以低成本制造具有不同厚度的栅极氧化膜的元件。

公开(公告)号：US20050088082A1

公开(公告)日：2005-04-28

申请号：US10944947

申请日：2004-09-21

申请人： Haruyuki Morita ,  Takashi Ogura

发明人： Haruyuki Morita ,  Takashi Ogura

IPC分类号： H01J1/62 ,  H01L51/52

CPC分类号： H01L51/5221 ,  H01L2251/5315 ,  Y10S428/917

摘要： An organic EL device includes an anode, a cathode having optical transparency, and an organic EL layer disposed between the anode and the cathode and including at least a fluorescent layer. The cathode has a metal layer including a first metal and a low work function metal, and a conductive oxide layer arranged in this order from the organic EL layer side, and the work function of the low work function metal is smaller than the work function of the first metal. The metal layer has a first surface on the organic EL layer side and a second surface on the conductive oxide layer side, and the concentration of the low work function metal at the first surface is greater than the concentration of the low work function metal at the second surface.

摘要翻译： 有机EL器件包括阳极，具有光学透明度的阴极和设置在阳极和阴极之间并且至少包括荧光层的有机EL层。 阴极具有包括第一金属和低功函数金属的金属层和从有机EL层侧依次排列的导电氧化物层，并且低功函数金属的功函数小于 第一金属。 金属层在有机EL层侧具有第一表面和导电氧化物层侧的第二表面，第一表面处的低功函数金属的浓度大于第一表面处的低功函数金属的浓度 第二面。

公开(公告)号：US06690493B1

公开(公告)日：2004-02-10

申请号：US09691065

申请日：2000-10-19

申请人： Isao Kobayashi ,  Yutaka Endo ,  Noriyuki Kaifu ,  Toshio Kameshima ,  Toshikazu Tamura ,  Hideki Nonaka ,  Takashi Ogura

发明人： Isao Kobayashi ,  Yutaka Endo ,  Noriyuki Kaifu ,  Toshio Kameshima ,  Toshikazu Tamura ,  Hideki Nonaka ,  Takashi Ogura

IPC分类号： H04N104

CPC分类号： H04N5/32 ,  H04N5/3454

摘要： In a photoelectric conversion device for reading signals in succession from plural photoelectric converting elements (S11-S33), arranged two-dimensionally on a substrate, by successively scanning drive lines (g1-g3) in the X-direction thereby transferring signals charges along signal lines in the Y-direction, for reading the signals of the photoelectric converting elements in a partial area, only the arbitrarily selected drive lines for the plural photoelectric converting elements are scanned in succession while the remaining drive lines are not driven or are driven simultaneously for transferring the charges at a timing different from the timing of drive of the arbitrarily selected drive lines.

摘要翻译： 在用于从多个光电转换元件（S11-S33）读取连续的信号的光电转换装置中，通过在X方向依次扫描驱动线（g1-g3），从而沿着信号传输信号电荷，二维地布置在基板上 在Y方向上的线，用于读取部分区域中的光电转换元件的信号，只有多个光电转换元件的任意选择的驱动线被连续扫描，而其余驱动线不被驱动或同时驱动 在与任意选择的驱动线的驱动时刻不同的时刻传送电荷。

公开(公告)号：US6012218A

公开(公告)日：2000-01-11

申请号：US42631

申请日：1998-03-17

申请人： Yoshiaki Shimizu ,  Fumio Tatezono ,  Naoto Matono ,  Takashi Ogura ,  Hiroyuki Okuda ,  Katsumi Umeda

发明人： Yoshiaki Shimizu ,  Fumio Tatezono ,  Naoto Matono ,  Takashi Ogura ,  Hiroyuki Okuda ,  Katsumi Umeda

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

摘要： The invention provides a thin film magnetic head including an upper core layer 9 which comprises a front first core layer 91a formed on a gap spacer layer 6 and having the same width as a track width on the recording medium at least in the vicinity of the face to be opposed to a recording medium, and a second core layer 92 extending from the medium-opposed face over the upper surface of the front first core layer 91a and further over the upper surface of an upper insulating layer 72. The upper core layer 9 has a thickness greater in a region extending from the medium-opposed face to a depth end restricting face DE of a lower insulating layer 71 than in a region extending over the upper surface of the upper insulating layer 72. The front first core layer 91a has an upper surface flush with the upper surface of the lower insulating layer 71. This structure gives an accurate track width and assures production with a high yield.

摘要翻译： 本发明提供了一种薄膜磁头，其包括上芯层9，其包括形成在间隙隔离层6上的前第一芯层91a，并且至少在表面附近具有与记录介质上的磁道宽度相同的宽度 与记录介质相对，第二芯层92从前第一芯层91a的上表面延伸并且在上绝缘层72的上表面上方从介质相对面延伸。上芯层9 在从中间相对面延伸到下绝缘层71的深度限制面DE的区域中的厚度大于在上绝缘层72的上表面延伸的区域中的厚度。前第一芯层91a具有 上表面与下绝缘层71的上表面齐平。这种结构提供了准确的轨道宽度并以高产量确保生产。

公开(公告)号：US5744761A

公开(公告)日：1998-04-28

申请号：US266924

申请日：1994-06-28

申请人： Takashi Ogura ,  Kousaku Murata

发明人： Takashi Ogura ,  Kousaku Murata

IPC分类号： H04R7/12 ,  H04R7/20 ,  H04R31/00 ,  G10K13/00

CPC分类号： H04R7/125 ,  H04R31/003 ,  H04R7/20 ,  H04R2231/001 ,  H04R2231/003 ,  H04R2307/025 ,  H04R2307/029 ,  H04R2307/204

摘要： A diaphragm for speakers comprises a self-support, shaped body including a tightly woven synthetic polymer fiber cloth substrate which has at least a diaphragm portion and edge portion shaped integrally with and extending from the diaphragm portion. The diaphragm portion of the cloth substrate had a polymer resin at least partially impregnated therein and the edge portion has a relatively flexible polymer material at least partially impregnated therein so that the edge portion is lower in stiffness than the diaphragm portion. The diaphragm-edge integral molding is fabricated by applying the respective types of polymers to the diaphragm and edge portions of the cloth substrate and subjecting the applied substrate to hot pressing in a mold capable of forming the integral molding. When applied as dynamic speakers, the integral molding exhibits a broad frequency band, low distortion rates and high sound quality. The stiffness difference between the diaphragm and edge portions may be created by using one type of thermoplastic resin which is applied to the diaphragm and edge portions in different amounts.

摘要翻译： 用于扬声器的隔膜包括自支撑成形体，其包括紧密编织的合成聚合物纤维布基底，其至少具有隔膜部分和与隔膜部分一体成形并且从隔膜部分延伸的边缘部分。 布基材的隔膜部分具有至少部分地浸渍在其中的聚合物树脂，并且边缘部分具有至少部分浸渍在其中的相对柔性的聚合物材料，使得边缘部分的刚度比隔膜部分低。 通过将各种类型的聚合物施加到布基材的隔膜和边缘部分并对所施加的基材进行热压以在能够形成整体成型的模具中进行热压来制造膜片边缘整体成型。 当作为动态扬声器使用时，整体成型具有宽频带，低失真率和高音质。 隔膜和边缘部分之间的刚度差可以通过使用一种类型的热塑性树脂来产生，该类型的热塑性树脂以不同的量施加到隔膜和边缘部分。

公开(公告)号：US5283132A

公开(公告)日：1994-02-01

申请号：US849708

申请日：1992-03-11

申请人： Takashi Ogura ,  Takuo Yamashita ,  Masaru Yoshida ,  Kazuhiro Emoto ,  Shigeo Nakajima

发明人： Takashi Ogura ,  Takuo Yamashita ,  Masaru Yoshida ,  Kazuhiro Emoto ,  Shigeo Nakajima

IPC分类号： C09K11/00 ,  C09K11/06 ,  H01L33/26 ,  H01L33/42 ,  H01L33/50 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14 ,  B32B17/06 ,  H01J1/63

CPC分类号： H05B33/14 ,  C09K11/06 ,  Y02B20/181 ,  Y10S428/917

摘要： An organic electroluminescent device for white luminescence, which includes a pair of opposite electrodes at least one of which is transparent, a hole transport layer and a luminescent layer. The layers are stacked in that order between the electrodes, the hole transport layer being formed from bis-di(p-tolyl)aminophenyl-1, 1-cyclohexane, and the luminescent layer being formed from a material having a luminescent peak at 460-480 nm and a thickness of 100-300 .ANG..

摘要翻译： 一种用于白色发光的有机电致发光器件，其包括至少一个透明的一对相对电极，空穴传输层和发光层。 这些层在电极之间以该顺序层叠，空穴传输层由双 - 二（对甲苯基）氨基苯基-1,1-环己烷形成，发光层由具有460nm的发光峰的材料形成， 480nm，厚度100-300（Aangstroem）。

公开(公告)号：US5278716A

公开(公告)日：1994-01-11

申请号：US974757

申请日：1992-11-12

申请人： Hiroyuki Okuda ,  Yoshiaki Shimizu ,  Kazuo Ino ,  Kousou Ishihara ,  Takashi Ogura

发明人： Hiroyuki Okuda ,  Yoshiaki Shimizu ,  Kazuo Ino ,  Kousou Ishihara ,  Takashi Ogura

IPC分类号： G11B5/147 ,  G11B5/235

CPC分类号： G11B5/147 ,  G11B5/235

摘要： A magnetic head comprises a pair of magnetic core halves, heat-resistant thin films and ferromagnetic thin films, the pair of magnetic core halves being opposed to each other through a non-magnetic material such as SiO.sub.2 to form a magnetic gap. The magnetic core halves are made of a ferromagnetic oxide such as ferrite and have gap forming faces to be opposed to each other to form the magnetic gap. The gap forming faces are etched by phosphoric acid solution and then purified by reverse sputtering, so that a grown crystal of the ferromagnetic oxide is exposed on the gap forming faces. A heat-resistant thin film of a heat-resistant material such as SiO.sub.2 is formed on each of the gap forming faces. A ferromagnetic thin film of a ferromagnetic metal material such as sendust is formed on each heat-resistant thin film. Preferably, the thickness of the heat-resistant thin film to be formed is 1 nm or more and one tenth or less of the width of the magnetic gap. For example, SiO.sub.2 films of 5 nm in thickness as the heat-resistant thin films are formed on the respective gap forming faces and sendust films of 3 .mu.m in thickness as the ferromagnetic metal thin films are formed on the respective SiO.sub.2 films. In this case, the gap length of the magnetic gap is set to 0.2 .mu.m.

摘要翻译： 磁头包括一对磁芯半部，耐热薄膜和铁磁性薄膜，一对磁芯半部通过非磁性材料如SiO 2彼此相对以形成磁隙。 磁芯半部由诸如铁氧体的铁磁性氧化物制成，并且具有彼此相对的间隙形成面以形成磁隙。 通过磷酸溶液蚀刻间隙形成面，然后通过反溅射进行纯化，使得在间隙形成面上暴露铁磁性氧化物的生长晶体。 在每个间隙形成面上形成耐热材料如SiO 2的耐热薄膜。 在每个耐热薄膜上形成铁硬金属材料如铁硅铝铁合金的铁磁薄膜。 优选地，要形成的耐热薄膜的厚度为磁隙宽度的1nm以上且十分之一以下。 例如，由于在各SiO 2膜上形成强磁性金属薄膜，所以在3（μm）m的间隙形成面和厚度为3μm的厚度的薄膜上，形成5nm厚的SiO 2膜。 在这种情况下，磁隙的间隙长度设定为0.2（my）m。