公开(公告)号：US08559414B2

公开(公告)日：2013-10-15

申请号：US13031188

申请日：2011-02-19

Applicant: Selma Yilmaz ,  Keyur Patel ,  Nitin Kumar ,  Robert Raszuk ,  Satish Mynam

Inventor： Selma Yilmaz ,  Keyur Patel ,  Nitin Kumar ,  Robert Raszuk ,  Satish Mynam

IPC: H04L12/28

CPC classification number: H04L45/123 ,  H04L45/02 ,  H04L45/04 ,  H04L45/12 ,  H04L45/42 ,  H04L45/52

Abstract: In an embodiment, a method comprises receiving a path advertisement comprising information about an available path and a well-known community value associated with the available path. A modified best path calculation is performed in response to receiving the available path either from a higher-ranked device or from a device that is not participating in diverse path calculation, resulting in creating a particular best path. The particular best path is advertised to other routers with or without a restriction indicator based on whether it is a client learned path or non-client iBGP peer learned path and based on whether the advertisement is directed to a client or a non-client iBGP peer.

Abstract translation: 在一个实施例中，一种方法包括接收包括关于可用路径的信息和与可用路径相关联的公知社区值的路径通告。 响应于从更高排名的设备或不参与不同路径计算的设备接收可用路径而执行修改的最佳路径计算，导致创建特定的最佳路径。 根据客户端学习路径还是非客户端iBGP对等体学习路径，并根据广告是指向客户端还是非客户端iBGP对等体，将特定最佳路径通告给具有或不具有限制指示符的其他路由器 。

公开(公告)号：US08476107B2

公开(公告)日：2013-07-02

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20120206059A1

公开(公告)日：2012-08-16

申请号：US13024443

申请日：2011-02-10

Applicant: Nitin Kumar ,  Shashank Bakre ,  Thomas J. Schalton

Inventor： Nitin Kumar ,  Shashank Bakre ,  Thomas J. Schalton

IPC: H05B41/24

CPC classification number: H05B41/2827 ,  H02M7/53832 ,  H05B41/42 ,  Y02B20/185

Abstract: A two level lighting ballast is provided, which includes a self-oscillating inverter circuit and a control circuit. The inverter includes an input; an output to selectively provide current to energize a lamp; a switching circuit operating at a switching frequency; a feedback transformer; and an impedance component. The feedback transformer is connected to the output, and drives the switching circuit based on the lamp current. The impedance component is connected in parallel with the feedback transformer, and is operated by the control circuit. When the control circuit enables the impedance component, the switching circuit operates in a first frequency range, and a first lamp current is provided. When the control circuit disables the impedance component, the switching circuit operates in a second frequency range, and a second lamp current is provided. The first frequency range is lower than the second, and the first lamp current is greater than the second.

Abstract translation: 提供了两级照明镇流器，其包括自振荡逆变器电路和控制电路。 逆变器包括一个输入端; 输出以选择性地提供电流以激励灯; 以开关频率工作的开关电路; 反馈变压器; 和阻抗分量。 反馈变压器连接到输出，并根据灯电流驱动开关电路。 阻抗元件与反馈变压器并联，由控制电路工作。 当控制电路使能阻抗分量时，开关电路在第一频率范围内工作，并提供第一灯电流。 当控制电路禁止阻抗分量时，开关电路在第二频率范围内工作，并提供第二灯电流。 第一个频率范围低于第二个频率范围，第一个灯电流大于第二个。

公开(公告)号：US20110201149A1

公开(公告)日：2011-08-18

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/8239

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US07972897B2

公开(公告)日：2011-07-05

申请号：US11702966

申请日：2007-02-05

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20110151105A1

公开(公告)日：2011-06-23

申请号：US12970638

申请日：2010-12-16

Applicant: Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

Inventor： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

IPC: C23C16/52 ,  B05C11/00

CPC classification number: C23C18/1254 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00443 ,  B01J2219/00691 ,  B01J2219/00702 ,  B01J2219/00756 ,  C40B30/00 ,  C40B60/12 ,  Y10T428/2991

Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

Abstract translation: 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。

公开(公告)号：US20100301759A1

公开(公告)日：2010-12-02

申请号：US12474141

申请日：2009-05-28

Applicant: Shashank Bakre ,  Nitin Kumar

Inventor： Shashank Bakre ,  Nitin Kumar

IPC: H05B39/04

CPC classification number: H05B41/295 ,  H05B41/2828 ,  H05B41/2855 ,  H05B41/2985 ,  Y02B20/186

Abstract: A restart circuit for causing an electronic ballast to perform a restart in response to reconnecting any lamp of a multiple lamp configuration of the electronic ballast to the electronic ballast is disclosed. The electronic ballast includes a filament health check circuit for providing a first current through a monitored filament of the lamps to a controller of the ballast. The controller restarts the electronic ballast when a determined ratio of the first current to a reference current indicates that the monitored filament has been disconnected or broken (i.e., the first current substantially decreases) and is subsequently replaced or reconnected to the ballast (i.e., the first current returns to a predetermined level). The ballast further comprises a dv/dt circuit for reducing the first current for a transient time period in response to reconnecting a filament other than the monitored filament to the ballast, causing the controller to restart the ballast.

Abstract translation: 公开了一种用于使电子镇流器响应于将电子镇流器的多灯配置的任何灯重新连接到电子镇流器而进行重启的重启电路。 电子镇流器包括灯丝健康检查电路，用于通过所监视的灯的灯丝将第一电流提供到镇流器的控制器。 当第一电流与参考电流的确定比率指示所监测的灯丝已经断开或断开（即，第一电流基本上减小）并且随后被替换或重新连接到镇流器时，控制器重新启动电子镇流器（即， 第一电流返回到预定水平）。 镇流器还包括dv / dt电路，用于响应于除了被监测的灯丝之外的灯丝重新连接到镇流器而使第一电流减小一个瞬时时间段，导致控制器重新启动镇流器。

公开(公告)号：US07785172B2

公开(公告)日：2010-08-31

申请号：US11838653

申请日：2007-08-14

Applicant: Peter Satitpunwaycha ,  Richard Endo ,  Zachary Fresco ,  Nitin Kumar

Inventor： Peter Satitpunwaycha ,  Richard Endo ,  Zachary Fresco ,  Nitin Kumar

IPC: B24B49/00 ,  B24B1/00

CPC classification number: H01L21/67046 ,  B24B37/00 ,  C25D17/00 ,  C25D21/12 ,  H01L21/67051 ,  H01L21/68764 ,  H01L21/68785

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract translation: 描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理 并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。

公开(公告)号：US07680117B1

公开(公告)日：2010-03-16

申请号：US11694738

申请日：2007-03-30

Applicant: Nitin Kumar ,  Fritz Budiyanto

Inventor： Nitin Kumar ,  Fritz Budiyanto

IPC: H04L12/28 ,  H04L12/56

CPC classification number: H04L45/00 ,  H04L45/38 ,  H04L45/54

Abstract: A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.

Abstract translation: 方法可以包括接收与分组流相关联的分组，所述分组包括目的地地址; 选择多个存储体之一，所选择的存储体与分组流相关联，其中多个存储体中的每一个存储用于将分组转发到目的地地址的相同的下一跳信息; 在所选择的存储体中访问用于将分组转发到目的地地址的下一跳信息; 并根据下一跳信息将报文转发到目的地址。

公开(公告)号：US07629198B2

公开(公告)日：2009-12-08

申请号：US11714334

申请日：2007-03-05

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L21/00 ,  H01L21/16

CPC classification number: H01L45/04 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。