公开(公告)号：US20160087142A1

公开(公告)日：2016-03-24

申请号：US14769831

申请日：2014-04-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Tobias MEYER ,  Jürgen OFF

IPC: H01L33/06 ,  H05B33/08 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/1096 ,  H01S5/3086 ,  H01S5/3408 ,  H01S5/34333 ,  H05B33/0803

Abstract: The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N≧2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

Abstract translation: 半导体层序列包括n导电层，p导电层和位于它们之间的有源区。 有源区包括N≥2的N个量子阱。 在第一电流密度的第一工作点（W1）处，量子阱具有第一发射波长，并且在第二工作点（W2）处具有第二电流密度，具有第二发射波长。 第一发射波长中的至少两个彼此不同，并且至少一些第二发射波长与第一发射波长不同。 第一电流密度小于第二电流密度，并且电流密度彼此至少彼此不同。