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    METHOD FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND DEVICE FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS
    3.
    发明申请
    METHOD FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND DEVICE FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS 有权

    公开(公告)号：US20220148897A1

    公开(公告)日：2022-05-12

    申请号：US17440841

    申请日：2020-02-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tobias MEYER ,  Korbinian PERZLMAIER

    IPC: H01L21/67 ,  H01L31/18 ,  H01L33/00

    Abstract: A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

    METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR COMPONENT, AND NITRIDE SEMICONDUCTOR COMPONENT
    7.
    发明申请
    METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR COMPONENT, AND NITRIDE SEMICONDUCTOR COMPONENT 审中-公开

    公开(公告)号：US20180226534A1

    公开(公告)日：2018-08-09

    申请号：US15750139

    申请日：2016-07-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tobias MEYER ,  Christian LEIRER

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/22

    CPC classification number: H01L33/007 ,  H01L33/22 ,  H01L33/32

    Abstract: The invention relates to a method for producing a nitride semiconductor component (10), comprising the following steps: epitaxially growing a nitride semiconductor layer sequence (2) on a growth substrate (1), wherein recesses (7) are formed on a boundary surface (5A) of a semiconductor layer (5) of the semiconductor layer sequence (2), growing a p-doped contact layer (8) over the semiconductor layer (5), wherein the p-doped contact layer (8) at least partially fills the recesses, and wherein the p-doped contact layer (8) has a lower dopant concentration in first regions (81) arranged at least partially in the recesses (7) than in second regions (82) arranged outside of the recesses (7), and applying a connection layer (9), which has a metal, a metal alloy, or a transparent conductive oxide, to the p-doped contact layer (8). The invention further relates to a nitride semiconductor component (10) that can be produced by means of the method.

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    8.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权

    公开(公告)号：US20220262999A1

    公开(公告)日：2022-08-18

    申请号：US17603602

    申请日：2020-04-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Korbinian PERZLMAIER ,  Tobias MEYER

    IPC: H01L33/62 ,  H01L33/24 ,  H01L33/38

    Abstract: An optoelectronic semiconductor component may include a semiconductor body having a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, as well as a first surface and a second surface different from the first surface. The component may further include a first contact structure for electrically contacting the first semiconductor region and a second contact structure for electrically contacting the second semiconductor region. The first and second contact structures may each have a first connection region arranged on the first surface and a second connection region arranged on the second surface for electrically contacting the semiconductor component from the outside. The first and second connection regions of the first contact structure and the first and second connection regions of the second contact structure may each be designed to be rotationally symmetrical with respect to an axis of symmetry.

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