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21.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
IPC分类号： G03F1/00
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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公开(公告)号：US20110111332A1
公开(公告)日：2011-05-12
申请号：US13001365
申请日：2009-06-25
IPC分类号： G03F1/00
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中从靠近透光基底的一侧依次层叠下层，中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成，具有第一蚀刻速率; 上层由含有金属的膜制成，具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成，具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30％以下。
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23.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20090155698A1
公开(公告)日：2009-06-18
申请号：US12066360
申请日：2006-09-08
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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24.发明申请MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US20120082924A1
公开(公告)日：2012-04-05
申请号：US13248896
申请日：2011-09-29
IPC分类号： H01L21/268 , G03F1/50 , G03F1/48 , G03F7/20
CPC分类号： G03F1/50 , G03F1/00 , G03F1/26 , G03F1/58 , G03F7/20 , G03F7/2041 , H01L21/266 , H01L21/268 , H01L21/31138
摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.
摘要翻译： 用于制造适于施加ArF准分子激光曝光光的二进制掩模的掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且对于曝光光的光密度为2.8以上，厚度为45nm以下。 下层由过渡金属和硅的总含量为90原子％以上的材料制成，厚度为30nm以上。 上层的厚度为3nm以上且6nm以下。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光的相位差为30度以下。
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公开(公告)号：US08574793B2
公开(公告)日：2013-11-05
申请号：US13327008
申请日：2011-12-15
IPC分类号： G03F1/50
CPC分类号： G03F1/50 , G03F1/00 , G03F1/58 , G03F1/74 , G03F7/2006 , Y10T428/24942
摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.
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公开(公告)号：US08431290B2
公开(公告)日：2013-04-30
申请号：US13126614
申请日：2009-10-27
摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.
摘要翻译： 光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。 光掩模坯料具有形成在其上的透光性基板和遮光膜。 遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。 遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为 前表面抗反射层在2nm的范围内变化。 选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。
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27.发明申请PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权PHOTOMASK BLANK，PHOTOMASK及其制造方法公开(公告)号：US20110212392A1
公开(公告)日：2011-09-01
申请号：US13126614
申请日：2009-10-27
摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.
摘要翻译： 光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。 光掩模坯料具有形成在其上的透光性基板和遮光膜。 遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。 遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为 前表面抗反射层在2nm的范围内变化。 选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。
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公开(公告)号：US20110081605A1
公开(公告)日：2011-04-07
申请号：US12935519
申请日：2009-03-31
IPC分类号： G03F1/00
摘要： The present invention provides a photomask blank in which a light-shielding film consisting of a plurality of layers is provided on a light transmissive substrate, wherein a layer that is provided to be closest to the front surface is made of CrO, CrON, CrN, CrOC or CrOCN, and wherein the atom number density of the front-surface portion of the light-shielding film is 9×1022 to 14×1022 atms/cm3.
摘要翻译： 本发明提供了一种光掩模坯料，其中由多层构成的遮光膜设置在透光基板上，其中设置成最靠近前表面的层由CrO，CrON，CrN， CrOC或CrOCN，其中遮光膜的前表面部分的原子数密度为9×1022〜14×1022atms / cm3。
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29.发明授权Mask blank, transfer mask and process for manufacturing semiconductor devices 有权掩模空白，传输掩模和制造半导体器件的工艺公开(公告)号：US08846274B2
公开(公告)日：2014-09-30
申请号：US13605125
申请日：2012-09-06
申请人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
发明人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
CPC分类号： C03C17/3411 , C03C17/3423 , C03C17/3435 , G03F1/38
摘要： The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
摘要翻译： 本发明的掩模坯料包括玻璃基板和形成在玻璃基板的主表面上的薄膜，该薄膜包括含有钽并且基本上不含氢的材料，掩模坯料在主体之间具有侵入抑制膜 玻璃基板的表面和抑制氢从玻璃基板侵入薄膜的薄膜。
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30.发明申请Photomask Blank, Photomask Manufacturing Method and Semiconductor Device Manufacturing Method 审中-公开光掩模空白，光掩模制造方法和半导体器件制造方法公开(公告)号：US20080305406A1
公开(公告)日：2008-12-11
申请号：US11631472
申请日：2005-07-08
摘要： By increasing the dry etching rate of a light shielding film, the dry etching time can be shortened so that loss of a resist film is reduced. As a result, a reduction in thickness (to 300 nm or less) of the resist film becomes possible so that pattern resolution and pattern accuracy (CD accuracy) can be improved. Further, by shortening the dry etching time, a photomask blank and a photomask manufacturing method are provided, which can form a pattern of the light shielding film having an excellent sectional shape. In a photomask blank having a light shielding film on an optically transparent substrate, the photomask blank being a mask blank for a dry etching process adapted for a photomask producing method of patterning the light shielding film by the dry etching process using as a mask a pattern of a resist formed on the light shielding film, the light shielding film is made of a material having a selectivity exceeding 1 with respect to the resist in the dry etching process.
摘要翻译： 通过提高遮光膜的干蚀刻速度，可以缩短干蚀刻时间，降低抗蚀剂膜的损失。 结果，可以减小抗蚀剂膜的厚度（至300nm或更小），从而可以提高图案分辨率和图案精度（CD精度）。 此外，通过缩短干蚀刻时间，提供了可以形成具有优异截面形状的遮光膜的图案的光掩模坯料和光掩模制造方法。 在具有在光学透明基板上具有遮光膜的光掩模坯料中，光掩模坯料是用于干蚀刻工艺的掩模坯料，其适用于通过使用掩模图案的干蚀刻工艺对遮光膜进行图案化的光掩模制造方法 形成在遮光膜上的抗蚀剂，在干蚀刻工艺中，光屏蔽膜由相对于抗蚀剂选择性超过1的材料制成。
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