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1.发明授权Mask blank, transfer mask and process for manufacturing semiconductor devices 有权掩模空白，传输掩模和制造半导体器件的工艺公开(公告)号：US08846274B2
公开(公告)日：2014-09-30
申请号：US13605125
申请日：2012-09-06
申请人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
发明人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
CPC分类号： C03C17/3411 , C03C17/3423 , C03C17/3435 , G03F1/38
摘要： The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
摘要翻译： 本发明的掩模坯料包括玻璃基板和形成在玻璃基板的主表面上的薄膜，该薄膜包括含有钽并且基本上不含氢的材料，掩模坯料在主体之间具有侵入抑制膜 玻璃基板的表面和抑制氢从玻璃基板侵入薄膜的薄膜。
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2.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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3.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08501372B2
公开(公告)日：2013-08-06
申请号：US13248896
申请日：2011-09-29
IPC分类号： G03F1/26
CPC分类号： G03F1/50 , G03F1/00 , G03F1/26 , G03F1/58 , G03F7/20 , G03F7/2041 , H01L21/266 , H01L21/268 , H01L21/31138
摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.
摘要翻译： 用于制造适于施加ArF准分子激光曝光光的二进制掩模的掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且对于曝光光的光密度为2.8以上，厚度为45nm以下。 下层由过渡金属和硅的总含量为90原子％以上的材料制成，厚度为30nm以上。 上层的厚度为3nm以上且6nm以下。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光的相位差为30度以下。
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公开(公告)号：US20120189946A1
公开(公告)日：2012-07-26
申请号：US13384168
申请日：2010-07-14
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低至少能够确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。
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公开(公告)号：US08637213B2
公开(公告)日：2014-01-28
申请号：US13384168
申请日：2010-07-14
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低到至少确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。
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6.发明申请MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US20120082924A1
公开(公告)日：2012-04-05
申请号：US13248896
申请日：2011-09-29
IPC分类号： H01L21/268 , G03F1/50 , G03F1/48 , G03F7/20
CPC分类号： G03F1/50 , G03F1/00 , G03F1/26 , G03F1/58 , G03F7/20 , G03F7/2041 , H01L21/266 , H01L21/268 , H01L21/31138
摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.
摘要翻译： 用于制造适于施加ArF准分子激光曝光光的二进制掩模的掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且对于曝光光的光密度为2.8以上，厚度为45nm以下。 下层由过渡金属和硅的总含量为90原子％以上的材料制成，厚度为30nm以上。 上层的厚度为3nm以上且6nm以下。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光的相位差为30度以下。
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7.发明授权公开(公告)号：US09017902B2
公开(公告)日：2015-04-28
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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8.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08822103B2
公开(公告)日：2014-09-02
申请号：US13288365
申请日：2011-11-03
摘要： A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.
摘要翻译： 用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。 遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅 ，和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率的比率为1.0以上且5.0以下 一部分。 另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo = 26.624。
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9.发明授权Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device 有权掩模空白，转印掩模，其制造方法和制造半导体器件的方法公开(公告)号：US08524421B2
公开(公告)日：2013-09-03
申请号：US13076254
申请日：2011-03-30
申请人： Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
发明人： Osamu Nozawa , Hiroaki Shishido , Toshiyuki Suzuki
IPC分类号： G03F1/50
摘要： In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
摘要翻译： 在用于制造转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。 遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层。 高氧化层位于与透明基板侧相反的一侧。
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公开(公告)号：US08435704B2
公开(公告)日：2013-05-07
申请号：US12875783
申请日：2010-09-03
申请人： Osamu Nozawa , Hiroaki Shishido
发明人： Osamu Nozawa , Hiroaki Shishido
IPC分类号： G03F1/22
摘要： In a mask blank for manufacturing a transfer mask adapted to exposure light having a wavelength of 200 nm or less, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film, that is placed on a side opposite to a transparent substrate side.
摘要翻译： 在用于制造适于曝光波长为200nm以下的光的转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。 遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层， 放置在与透明基板侧相对的一侧。
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