公开(公告)号：US09202565B2

公开(公告)日：2015-12-01

申请号：US14118635

申请日：2013-03-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ken Kawai ,  Kazuhiko Shimakawa ,  Yoshikazu Katoh

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0033 ,  G11C13/0097 ,  G11C2013/0092 ,  G11C2213/55

Abstract: A write method for writing to a variable resistance nonvolatile memory element, comprising applying a set of strong recovery-voltage pulses at least once to the variable resistance nonvolatile memory element when it is determined that the resistance state of the variable resistance nonvolatile memory element fails to change to a second resistance state, remaining in a first resistance state, the set of strong recovery-voltage pulses including pulses: (1) a first strong recovery-voltage pulse which has a greater amplitude than a normal second voltage for changing the resistance state to the first resistance state, and has the same polarity as the second voltage; and (2) a second strong recovery-voltage pulse which follows the first strong recovery-voltage pulse and has a longer pulse width than the pulse width of the normal first voltage for changing the resistance state to the second resistance state, and has the same polarity as the first voltage.

Abstract translation: 一种用于写入可变电阻非易失性存储元件的写入方法，包括当确定可变电阻非易失性存储元件的电阻状态不能够时，将至少一次的一组强恢复电压脉冲施加到可变电阻非易失性存储元件 改变为第二电阻状态，保持在第一电阻状态，包括脉冲的强恢复电压脉冲集合：（1）具有比用于改变电阻状态的正常第二电压更大的幅度的第一强恢复电压脉冲 并具有与第二电压相同的极性; 和（2）第二强恢复电压脉冲，其跟随第一强恢复电压脉冲并且具有比用于将电阻状态改变为第二电阻状态的正常第一电压的脉冲宽度更长的脉冲宽度，并且具有相同 极性作为第一电压。

公开(公告)号：US09001557B2

公开(公告)日：2015-04-07

申请号：US13990209

申请日：2012-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ken Kawai ,  Kazuhiko Shimakawa ,  Yoshikazu Katoh ,  Yuichiro Ikeda

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2013/0092

Abstract: Provided is a method of writing to a variable resistance nonvolatile memory element which is capable of both improving retention characteristics and enlarging a window of operation. In the method of writing, to write “1” data (LR), first a weak HR writing process is performed in which a weak HR writing voltage pulse set for changing the variable resistance nonvolatile memory element to an intermediate resistance state is applied and, subsequently, a LR writing process is performed in which a LR writing voltage pulse set for changing the variable resistance nonvolatile memory element from the intermediate resistance state to a LR state is applied.

Abstract translation: 提供一种写入能够改善保持特性和扩大操作窗口的可变电阻非易失性存储元件的方法。 在写入方法中，为了写入“1”数据（LR），首先执行将用于将可变电阻非易失性存储元件变更为中间电阻状态而设定的弱的HR写入电压脉冲的弱的HR写入处理， 随后，执行LR写入处理，其中设置用于将可变电阻非易失性存储元件从中间电阻状态改变为LR状态的LR写入电压脉冲。