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公开(公告)号：US11892715B2
公开(公告)日：2024-02-06
申请号：US17552240
申请日：2021-12-15
Applicant: PSIQUANTUM, CORP.
Inventor： Yong Liang , Mark G. Thompson , Chia-Ming Chang , Vimal Kumar Kamineni
CPC classification number: G02F1/035 , G02F1/225 , G02B2006/12142
Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.
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公开(公告)号：US11651956B2
公开(公告)日：2023-05-16
申请号：US17692977
申请日：2022-03-11
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , Vimal Kumar Kamineni
CPC classification number: H01L21/02381 , H01L21/0262 , H01L21/02161 , H01L21/02236 , H01L21/28194
Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
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Patent Agency Ranking
公开(公告)号：US20220270874A1
公开(公告)日：2022-08-25
申请号：US17692977
申请日：2022-03-11
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , Vimal Kumar Kamineni
Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
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公开(公告)号：US11302528B2
公开(公告)日：2022-04-12
申请号：US16791948
申请日：2020-02-14
Applicant: PsiQuantum Corp.
Inventor： Yong Liang , Vimal Kumar Kamineni
Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
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公开(公告)号：US20220107518A1
公开(公告)日：2022-04-07
申请号：US17552240
申请日：2021-12-15
Applicant: PSIQUANTUM, CORP.
Inventor： Yong Liang , Mark G. Thompson , Chia-Ming Chang , Vimal Kumar Kamineni
Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.
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公开(公告)号：US20220037145A1
公开(公告)日：2022-02-03
申请号：US17377135
申请日：2021-07-15
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , Ann Melnichuk
IPC: H01L21/02 , H01L21/683
Abstract: In some embodiments a method comprises depositing a first silicon nitride layer on a top surface of a semiconductor wafer and forming one or more first gaps in the first silicon nitride layer. The one or more first gaps can relieve stress formed in the first silicon nitride layer. A first fill material is deposited on the first silicon nitride layer and the first silicon nitride layer is planarized. A second silicon nitride layer is deposited across the first silicon nitride layer and one or more second gaps are formed in the second silicon nitride layer. The one or more second gaps can relieve stress formed in the second silicon nitride layer. A second fill material is deposited across the second silicon nitride layer and the second silicon nitride layer is planarized.
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公开(公告)号：US20210310152A1
公开(公告)日：2021-10-07
申请号：US17219970
申请日：2021-04-01
Applicant: Psiquantum, Corp.
Inventor： Yong Liang , John Elliott Ortmann, JR. , John Berg , Ann Melnichuk
Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
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