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公开(公告)号：US20240201525A1
公开(公告)日：2024-06-20
申请号：US18544220
申请日：2023-12-18
申请人： Psiquantum, Corp.
CPC分类号： G02F1/035 , G02F1/225 , G02B2006/12142
摘要： A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.
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公开(公告)号：US11226507B2
公开(公告)日：2022-01-18
申请号：US17083141
申请日：2020-10-28
申请人： PSIQUANTUM, CORP.
摘要： An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers, a waveguide core adjacent to the layer stack, a waveguide cladding layer, and a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.
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公开(公告)号：US20210124233A1
公开(公告)日：2021-04-29
申请号：US17083141
申请日：2020-10-28
申请人： PSIQUANTUM, CORP.
摘要： An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers, a waveguide core adjacent to the layer stack, a waveguide cladding layer, and a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.
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公开(公告)号：US20210028015A1
公开(公告)日：2021-01-28
申请号：US16791948
申请日：2020-02-14
申请人： PsiQuantum Corp.
发明人： Yong Liang , Vimal Kumar Kamineni
摘要： A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
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公开(公告)号：US11817400B2
公开(公告)日：2023-11-14
申请号：US17377131
申请日：2021-07-15
申请人： Psiquantum, Corp.
CPC分类号： H01L23/562 , H01L21/02186 , H01L27/1203
摘要： In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.
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公开(公告)号：US20230123000A1
公开(公告)日：2023-04-20
申请号：US18082520
申请日：2022-12-15
申请人： Psiquantum, Corp.
发明人： Vimal Kumar Kamineni , Matteo Staffaroni , Faraz Najafi , Ann Melnichuk , George Kovall , Yong Liang
摘要： A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.
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公开(公告)号：US20230018940A1
公开(公告)日：2023-01-19
申请号：US17377131
申请日：2021-07-15
申请人： Psiquantum, Corp.
摘要： In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.
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公开(公告)号：US20240063146A1
公开(公告)日：2024-02-22
申请号：US18500504
申请日：2023-11-02
申请人： Psiquantum, Corp.
CPC分类号： H01L23/562 , H01L21/02186 , H01L27/1203
摘要： A wafer includes a silicon layer, a first dielectric layer on the silicon layer, and a ferroelectric layer on the first dielectric layer. The ferroelectric layer defines one or more gaps between portions of the ferroelectric layer. The wafer also includes a second dielectric layer on the ferroelectric layer and disposed within the one or more gaps.
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公开(公告)号：US11892715B2
公开(公告)日：2024-02-06
申请号：US17552240
申请日：2021-12-15
申请人： PSIQUANTUM, CORP.
CPC分类号： G02F1/035 , G02F1/225 , G02B2006/12142
摘要： An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.
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公开(公告)号：US11651956B2
公开(公告)日：2023-05-16
申请号：US17692977
申请日：2022-03-11
申请人： Psiquantum, Corp.
发明人： Yong Liang , Vimal Kumar Kamineni
CPC分类号： H01L21/02381 , H01L21/0262 , H01L21/02161 , H01L21/02236 , H01L21/28194
摘要： A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
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