公开(公告)号：US09270255B2

公开(公告)日：2016-02-23

申请号：US14305804

申请日：2014-06-16

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Yong Il Kwon ,  Moon Suk Jeong ,  Tah Joon Park

IPC: H03K3/00 ,  H03K3/012 ,  H03K17/687

CPC classification number: H03K3/012 ,  H03K17/102 ,  H03K17/687

Abstract: A high voltage driver may include: a low side switching unit including first to n-th N-channel metal oxide semiconductor (NMOS) transistors; a high side switching unit including first and second to n-th P-channel MOS (PMOS) transistors; a voltage dividing unit dividing a voltage between the output terminal and the ground; a first constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th NMOS transistors; a second constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th PMOS transistors; a first charging unit providing a charged voltage to each of the gates of the second to n-th NMOS transistors; and a second charging unit providing a charged voltage to each of the gates of the second to n-th PMOS transistors.

Abstract translation: 高电压驱动器可以包括：包括第一至第n N沟道金属氧化物半导体（NMOS）晶体管的低侧开关单元; 包括第一至第n至第n个P沟道MOS（PMOS）晶体管的高侧开关单元; 分压单元，分压输出端和地之间的电压; 第一恒压单元，在第一至第n NMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第二恒压单元，在第一至第n PMOS晶体管中的每一个的源极和栅极之间提供恒定电压和单向信号路径; 第一充电单元，向第二至第n NMOS晶体管的每个栅极提供充电电压; 以及向所述第二至第n PMOS晶体管的每个栅极提供充电电压的第二充电单元。

公开(公告)号：US09146646B2

公开(公告)日：2015-09-29

申请号：US14218421

申请日：2014-03-18

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Yong Il Kwon ,  Moon Suk Jeong ,  Tah Joon Park

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/044 ,  G06F3/0416

Abstract: There is provided an apparatus for generating a driving signal, the apparatus including: a first driving signal generation circuit generating a first driving signal; a second driving signal generation circuit generating a second driving signal, the second driving signal generation circuit including at least two transistors and a pulse generation unit; and a control unit controlling the first and second driving signal generation circuits so that they generate the first and second driving signals selectively.

Abstract translation: 提供了一种用于产生驱动信号的装置，该装置包括：产生第一驱动信号的第一驱动信号产生电路; 产生第二驱动信号的第二驱动信号产生电路，所述第二驱动信号产生电路至少包括两个晶体管和脉冲产生单元; 以及控制单元，其控制所述第一和第二驱动信号生成电路，使得它们选择性地产生所述第一和第二驱动信号。

公开(公告)号：US20150097647A1

公开(公告)日：2015-04-09

申请号：US14502578

申请日：2014-09-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sa Yong Lee ,  Yong Il Kwon ,  Jin Ho Hong ,  Sung Han Kim ,  Keun Yong Lee

IPC: H01F27/32 ,  H01F27/29

CPC classification number: H01F17/0013 ,  H01L2224/48091 ,  H01L2924/00014 ,  Y10T428/31612 ,  H01L2224/45099

Abstract: A chip component includes a magnetic substrate having ferrite layers, and an insulating layer disposed on the magnetic substrate and having an electrode disposed therein. An external electrode is connected to the electrode on the insulating layer. The magnetic substrate and the insulating layer have a chemical coupling structure formed on an interface therebetween. The chemical coupling structure includes Si—O—C or Si—O—N.

Abstract translation: 芯片部件包括具有铁氧体层的磁性基板和设置在磁性基板上并具有设置在其中的电极的绝缘层。 外部电极连接到绝缘层上的电极。 磁性基板和绝缘层在它们之间的界面上形成有化学耦合结构。 化学偶联结构包括Si-O-C或Si-O-N。

公开(公告)号：US20140225858A1

公开(公告)日：2014-08-14

申请号：US13887841

申请日：2013-05-06

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Byeong Hak JO ,  Tah Joon Park ,  Yong Il Kwon ,  Hyun Suk Lee

IPC: G01R27/26 ,  G06F3/044

CPC classification number: G06F3/044 ,  G06F3/0418

Abstract: A capacitance sensing apparatus includes: a driving circuit unit applying a driving signal of a first period to a node capacitor; a first integrating circuit unit integrating voltage charged in the node capacitor to generate output voltage of which a voltage level is changed twice during a second period; a buffer capacitor charged or discharged by the output voltage of the first integrating circuit unit; a second integrating circuit unit integrating voltage charged in the buffer capacitor to generate output voltage of which a voltage level is changed twice during the first period; and an amplifying unit differentially amplifying non-inverted output voltage and inverted output voltage of the second integrating circuit unit, wherein the amplifying unit amplifies voltage corresponding to a difference between the non-inverted output voltage and the inverted output voltage during a reset section of the second integrating circuit unit to generate offset information.

Abstract translation: 电容感测装置包括：驱动电路单元，将第一周期的驱动信号施加到节点电容器; 第一积分电路单元，积分在节点电容器中充电的电压，以产生在第二时段期间电压电平改变两次的输出电压; 由第一积分电路单元的输出电压充电或放电的缓冲电容器; 第二积分电路单元，积分在所述缓冲电容器中充电的电压，以产生在所述第一时段期间电压电平改变两次的输出电压; 以及放大单元，对所述第二积分电路单元的非反相输出电压和反相输出电压进行差分放大，其中，所述放大单元在所述第二积分电路单元的复位部分放大对应于所述非反相输出电压和所述反相输出电压之间的差的电压 第二积分电路单元产生偏移信息。

公开(公告)号：US20140036974A1

公开(公告)日：2014-02-06

申请号：US13951398

申请日：2013-07-25

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Hyun Min ,  Yong Il Kwon ,  Koon Shik Cho

IPC: H04L25/03

CPC classification number: H04L25/03019 ,  H04B1/1036

Abstract: The present invention relates to an adaptive filter, which includes an analog filter; an analog-digital converter; a modem; a control unit connected to the modem to detect an adjacent interference signal adjacent to an interested channel signal; and a filter control signal generating unit connected to the control unit to generate a filter control signal for controlling a capacity of a variable capacitor, and a method of adaptive filtering and can control a filter passband adaptively to the adjacent interference signal.

Abstract translation: 自适应滤波器技术领域本发明涉及一种包括模拟滤波器的自适应滤波器; 模数转换器; 调制解调器 连接到所述调制解调器的控制单元，以检测与感兴趣信道信号相邻的相邻干扰信号; 以及滤波器控制信号生成单元，连接到控制单元，以产生用于控制可变电容器的容量的滤波器控制信号，以及自适应滤波的方法，并且可以自适应地控制相邻干扰信号的滤波器通带。