OPTO-ELECTRONIC DEVICE HAVING JUNCTION FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210249453A1

    公开(公告)日:2021-08-12

    申请号:US16919328

    申请日:2020-07-02

    IPC分类号: H01L27/146

    摘要: Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.