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公开(公告)号:US20170084619A1
公开(公告)日:2017-03-23
申请号:US15209371
申请日:2016-07-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Xianyu WENXU , lnkyeong YOO , Hojung KIM , Seong ho CHO
IPC: H01L27/115 , H01L21/265 , H01L21/28 , H01L21/308 , H01L29/51 , H01L21/02 , H01L21/762 , H01L29/06 , H01L29/08 , H01L29/66
CPC classification number: H01L27/1157 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C2213/53 , G11C2213/79 , H01L21/0217 , H01L21/02175 , H01L21/02183 , H01L21/02186 , H01L21/28282 , H01L21/308 , H01L21/762 , H01L21/76202 , H01L21/76224 , H01L27/1052 , H01L29/0649 , H01L29/0847 , H01L29/66833 , H01L29/685 , H01L45/00
Abstract: Example embodiments relate to a method of fabricating a synapse memory device capable of being driven at a low voltage and realizing a multi-level memory. The synapse memory device includes a two-transistor structure in which a drain region of a first transistor including a memory layer and a first source region of a second transistor share a source-drain shared area. The synapse memory device is controlled by applying a voltage through the source-drain shared area. The memory layer includes a charge trap layer and a threshold switching layer, and may realize a non-volatile multi-level memory function.
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公开(公告)号:US20170083811A1
公开(公告)日:2017-03-23
申请号:US15267600
申请日:2016-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: SEONGHO CHO , lnkyeong YOO , Hojung KIM
IPC: G06N3/04 , H01L29/423 , H01L29/788 , G11C16/26 , G11C16/04 , G11C16/12 , G11C16/14 , H01L29/792 , H01L29/10
CPC classification number: G06N3/04 , G11C11/54 , G11C11/56 , G11C13/0002 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C2213/72 , G11C2213/79 , H01L29/1083 , H01L29/42328 , H01L29/42332 , H01L29/42344 , H01L29/42348 , H01L29/7881 , H01L29/792
Abstract: Provided are a weighting device that may be driven at a low voltage and is capable of embodying multi-level weights, a neural network, and a method of operating the weighting device. The weighting device includes a switching layer that may switch between a high resistance state and a low resistance state based on a voltage applied thereto and a charge trap material layer that traps or discharges charges according to a resistance state of the switching layer. The weighting device may be used for controlling a weight in a neural network.
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