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公开(公告)号：US20230075211A1
公开(公告)日：2023-03-09
申请号：US17400727
申请日：2021-08-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wataru SOTOYAMA , Soonok Jeon , Rie Sakurai , Katsunori SHIBATA , Atsushi Imamura , Juhyun Kim , Mitsunori Ito , Eigo Miyazaki , Joonghyuk Kim
Abstract: Provided are a condensed cyclic compound represented by Formula 1-1 or 1-2, an organic light-emitting device including the condensed cyclic compound, and an electronic apparatus including the organic light-emitting device: wherein Formulae 1-1 and 1-2 are the same as described in the present specification.
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Patent Agency Ranking
公开(公告)号：US11327107B2
公开(公告)日：2022-05-10
申请号：US17023656
申请日：2020-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Juhun Park , Juhyun Kim , Deokhan Bae , Myungyoon Um
Abstract: A method of testing a semiconductor device may include preparing a semiconductor substrate in which the semiconductor substrate includes a test element group including first and second test circuits, measuring first and second leakage currents in the first and second test circuits, respectively, and calculating leakage components by comparing the first and second leakage currents. Each of the first and second test circuits may include an active region, which is an upper portion of the semiconductor substrate, a gate electrode, which is configured to cross the active region and to extend in a first direction, and an active contact, which is on the active region, is spaced apart from the gate electrode, and extends in the first direction. The second test circuit may further include a first gate contact that is connected to the gate electrode and overlaps the active region in a vertical direction perpendicular to the substrate.
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公开(公告)号：US10957845B2
公开(公告)日：2021-03-23
申请号：US16442991
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunsun Noh , Juhyun Kim , Whankyun Kim
Abstract: Provided are magnetic memory devices and method of fabricating the same. The magnetic memory device includes a magnetic tunnel junction pattern disposed on a substrate and including a free layer, a tunnel barrier layer and a pinned layer which are sequentially stacked, and a first spin-orbit torque (SOT) line being in contact with a first sidewall of the free layer of the magnetic tunnel junction pattern.
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公开(公告)号：US10944063B2
公开(公告)日：2021-03-09
申请号：US16057929
申请日：2018-08-08
Applicant: Samsung Electronics Co., Ltd. , Samsung SDI Co., Ltd.
Inventor： Dmitry Kravchuk , Wook Kim , Juhyun Kim , Changho Noh , Sangho Park , Satoko Ishibe , Seokho Kang , Inkoo Kim , Jiho Yoo , Dongseon Lee , Hasup Lee , Jun Chwae
Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
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公开(公告)号：US10941171B2
公开(公告)日：2021-03-09
申请号：US16031443
申请日：2018-07-10
Applicant: Samsung Electronics Co., Ltd. , Samsung SDI Co., Ltd.
Inventor： Changho Noh , Wataru Sotoyama , Wook Kim , Juhyun Kim , Sangho Park , Satoko Ishibe , Hasup Lee , Dmitry Kravchuk
Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
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26.发明授权公开(公告)号：US10211396B2
公开(公告)日：2019-02-19
申请号：US15943698
申请日：2018-04-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Juhyun Kim , Kiwoong Kim , Sechung Oh , Woochang Lim
Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.
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