CHIP ANTENNA FOR NEAR FIELD COMMUNICATION AND METHOD OF MANUFACTURING THE SAME
    23.
    发明申请
    CHIP ANTENNA FOR NEAR FIELD COMMUNICATION AND METHOD OF MANUFACTURING THE SAME 有权
    用于近场通信的芯片天线及其制造方法

    公开(公告)号:US20160118721A1

    公开(公告)日:2016-04-28

    申请号:US14830335

    申请日:2015-08-19

    CPC classification number: H01Q9/28 H01Q1/2283

    Abstract: Provided are chip antennas for near field communication and methods of manufacturing the chip antennas. A chip antenna for near field communication includes a substrate; a first antenna element on the substrate; and a second antenna element on the first antenna element. The substrate, the first antenna element, and the second antenna element are included in a single chip. The first and second antenna elements are formed outside the chip. The substrate is a lower layer including a plurality of devices. The first antenna element is a metal structure having a fish bone shape. The second antenna element is a dipole antenna.

    Abstract translation: 提供了用于近场通信的芯片天线和制造芯片天线的方法。 用于近场通信的芯片天线包括基板; 基板上的第一天线元件; 以及第一天线元件上的第二天线元件。 衬底,第一天线元件和第二天线元件包括在单个芯片中。 第一和第二天线元件形成在芯片外部。 衬底是包括多个器件的下层。 第一天线元件是具有鱼骨形状的金属结构。 第二天线元件是偶极天线。

    OPTO-ELECTRONIC DEVICE HAVING JUNCTION FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210249453A1

    公开(公告)日:2021-08-12

    申请号:US16919328

    申请日:2020-07-02

    Abstract: Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.

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