MAGNETIC STRUCTURE FREE LAYER STABILIZATION
    21.
    发明申请
    MAGNETIC STRUCTURE FREE LAYER STABILIZATION 审中-公开
    磁结构自由层稳定

    公开(公告)号:US20130321954A1

    公开(公告)日:2013-12-05

    申请号:US13961116

    申请日:2013-08-07

    CPC classification number: G11B5/147 G11B5/127 G11B5/3932

    Abstract: A magnetic layered structure is presently disclosed comprising a pinned layer, a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer, a free layer, a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer, and a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer that tunes free layer bias to a desired level.

    Abstract translation: 目前公开了一种磁性层状结构,其包括固定层,限定被钉扎层的磁性取向的第一抗铁磁性层,自由层,将自由层偏压到大致垂直于 被钉扎层的磁性取向以及位于第二反铁磁层之间并与第二反铁磁层接触的调谐层和将自由层偏压调节到期望水平的自由层。

    Magnetic element with reduced shield-to-shield spacing

    公开(公告)号:US10147447B2

    公开(公告)日:2018-12-04

    申请号:US15072489

    申请日:2016-03-17

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Magnetic element with reduced shield-to-shield spacing
    23.
    发明授权
    Magnetic element with reduced shield-to-shield spacing 有权
    磁性元件具有减小的屏蔽间隔距离

    公开(公告)号:US09305578B1

    公开(公告)日:2016-04-05

    申请号:US13956912

    申请日:2013-08-01

    CPC classification number: G11B5/3163 G11B5/3912 G11B5/3932 G11B5/398

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Abstract translation: 公开了磁性堆叠。 磁性堆叠包括磁响应层压,其包括铁磁自由层,合成反铁磁(SAF)结构和位于铁磁性自由层和SAF结构之间的间隔层。 磁响应层压件通过空气轴承表面(ABS)与存储在相邻介质中的感测数据位分离。 堆叠还包括耦合到SAF结构与ABS的预定偏移距离的第一反铁磁(AFM)结构,以及通过第一屏蔽层与第一AFM结构分离的第二AFM结构。

    LEADS COUPLED TO TOP AND BOTTOM READER STACKS OF A READER
    24.
    发明申请
    LEADS COUPLED TO TOP AND BOTTOM READER STACKS OF A READER 有权
    领先的读者阅读器的顶部和底部读取器堆栈

    公开(公告)号:US20160005425A1

    公开(公告)日:2016-01-07

    申请号:US14323119

    申请日:2014-07-03

    Abstract: A reader includes top and bottom reader stacks that are offset relative to each other in a downtrack direction and disposed between a top shield and a bottom shield. Top side shields surround the top reader stack in a crosstrack direction, and bottom side shields surround the bottom reader stack in the crosstrack direction. A middle shield is between the top and bottom reader stacks and the top and bottom side shields. The middle shield includes a common electrical conductive path coupled to the top and bottom reader stacks. A middle lead is coupled to an edge of the middle shield.

    Abstract translation: 阅读器包括顶部和底部读取器堆叠,其在倾斜方向上相对于彼此偏移并且设置在顶部屏蔽和底部屏蔽之间。 顶部屏蔽层以交叉方向围绕顶部读取器堆叠,并且底部侧屏蔽围绕底部读取器堆叠在横向方向上。 中间的屏蔽是在顶部和底部读取器堆叠之间以及顶部和底部侧面屏蔽之间。 中间屏蔽包括耦合到顶部和底部读取器堆叠的公共导电路径。 中间导线连接到中间屏蔽的边缘。

    MAGNETIC ELEMENT ELECTRODE LAMINATION
    27.
    发明申请
    MAGNETIC ELEMENT ELECTRODE LAMINATION 有权
    磁性元件电极层压

    公开(公告)号:US20140212691A1

    公开(公告)日:2014-07-31

    申请号:US13756044

    申请日:2013-01-31

    Abstract: Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive stack that has an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination.

    Abstract translation: 各种实施例可以通常涉及能够优化磁阻数据读取的磁性元件。 这种磁性元件可以至少配置为具有电磁层叠的磁阻堆叠,该电阻层叠具有设置在磁阻堆叠的无磁性层和电极层叠的电极层之间的至少一个过渡金属层。

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