公开(公告)号：US09899420B2

公开(公告)日：2018-02-20

申请号：US14290251

申请日：2014-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Seiko Inoue ,  Shinpei Matsuda ,  Daisuke Matsubayashi ,  Masahiko Hayakawa

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262

Abstract: In a pixel including a selection transistor, a driver transistor, and a light-emitting element, as the driver transistor, a transistor is used in which a channel is formed in an oxide semiconductor film and its channel length is 0.5 μm or greater and 4.5 μm or less. The driver transistor includes a first gate electrode over an oxide semiconductor film and a second gate electrode below the oxide semiconductor film. The first gate electrode and the second gate electrode are electrically connected to each other and overlap with the oxide semiconductor film. Furthermore, in the selection transistor of a pixel, which does not need to have field-effect mobility as high as that of the driver transistor, a channel length is made longer than at least the channel length of the driver transistor.

公开(公告)号：US20150060896A1

公开(公告)日：2015-03-05

申请号：US14471157

申请日：2014-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shinya Okano ,  Shigeru Onoya ,  Seiko Inoue ,  Masaaki Hiroki

IPC: H01L27/15

CPC classification number: H01L27/153 ,  G09G3/3225 ,  G09G3/3233 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/0257 ,  G09G2320/043 ,  G09G2320/046 ,  G09G2330/028 ,  G09G2330/04 ,  G09G2380/02 ,  H01L51/50

Abstract: To suppress a loss of data in a semiconductor device. To provide a display device including a capacitor storing data, a display element performing display in accordance with the data, and switching elements connected to electrodes of the capacitor. In the display device, the voltage is held between the electrodes of the capacitor by turning the switching elements off; thus, the data can be stored even when supplying the power supply is stopped.

Abstract translation: 以抑制半导体器件中的数据丢失。 为了提供一种显示装置，包括存储数据的电容器，根据数据执行显示的显示元件以及连接到电容器的电极的开关元件。 在显示装置中，通过关闭开关元件将电压保持在电容器的电极之间; 因此，即使在停止供电时也可以存储数据。

公开(公告)号：US08929128B2

公开(公告)日：2015-01-06

申请号：US13892458

申请日：2013-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka Shionoiri ,  Seiko Inoue

IPC: G11C11/24 ,  G11C11/409 ,  G11C11/4076 ,  G11C11/408

CPC classification number: G11C11/409 ,  G11C11/4076 ,  G11C11/4087

Abstract: A storage device in which held voltage is prevented from decreasing due to feedthrough in writing data to the storage device at high voltage is provided. The storage device includes a write circuit, a bit line, a word line, a transistor, and a capacitor. A gate of the transistor is electrically connected to the word line. One of a source and a drain of the transistor is electrically connected to the bit line. The other of the source and the drain of the transistor is electrically connected to one terminal of the capacitor. The other terminal of the capacitor is electrically connected to a ground. The write circuit includes an element holding write voltage and a circuit gradually decreasing voltage from the element holding write voltage. The write voltage is output from the write circuit to the word line.

Abstract translation: 提供了一种存储装置，其中防止由于在高电压下向存储装置写入数据的馈通而保持的电压降低。 存储装置包括写入电路，位线，字线，晶体管和电容器。 晶体管的栅极电连接到字线。 晶体管的源极和漏极之一电连接到位线。 晶体管的源极和漏极中的另一个电连接到电容器的一个端子。 电容器的另一个端子电连接到地。 写入电路包括保持写入电压的元件和从元件保持写入电压逐渐降低电压的电路。 写入电压从写入电路输出到字线。

公开(公告)号：US08884302B2

公开(公告)日：2014-11-11

申请号：US13777106

申请日：2013-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiko Inoue ,  Hiroyuki Miyake ,  Kouhei Toyotaka

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1251

Abstract: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

Abstract translation: 一种半导体器件，包括在绝缘表面上彼此分开形成的第一栅电极和第二栅电极，包括与第一栅极重叠的区域的氧化物半导体膜，其间插入有栅极绝缘膜，与第二栅极重叠的区域 栅极电极，其间插入有栅极绝缘膜，以及与第一栅极电极和第二栅极电极都不重叠的区域，以及覆盖栅极绝缘膜，第一栅极电极，第二栅极电极和氧化物半导体的绝缘膜 膜，并且与氧化物半导体膜直接接触。

公开(公告)号：US20140104262A1

公开(公告)日：2014-04-17

申请号：US14049300

申请日：2013-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Hideaki Shishido ,  Seiko Inoue

IPC: G09G3/36

CPC classification number: G09G3/3696 ,  G02F1/1368 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2320/0219

Abstract: In a video voltage comparator circuit, an average of first video voltages applied to pixel electrodes of pixels in the second-half rows in a k-th frame period (k is a natural number) is compared with an average of second video voltages applied to pixel electrodes of pixels in the first-half rows in a (k+1)th frame period for each row. In an overdrive voltage switching circuit, when a difference obtained from the comparison in the video voltage comparator circuit is greater than or equal to a threshold value, the overdrive voltage in the (k+1)th frame period is switched to a first overdrive voltage, and when the difference obtained from the comparison in the video voltage comparator circuit is less than the threshold value, the overdrive voltage in the (k+1)th frame period is switched to a second overdrive voltage lower than the first overdrive voltage.

Abstract translation: 在视频电压比较器电路中，将施加到第k帧周期（k为自然数）的后半行像素的像素电极的第一视频电压的平均值与施加到 在每行的第（k + 1）帧周期中的前半行中的像素的像素电极。 在过驱动电压切换电路中，当从视频电压比较器电路的比较得到的差大于或等于阈值时，将第（k + 1）帧周期中的过驱动电压切换为第一过驱动电压 ，并且当从视频电压比较器电路中的比较得到的差小于阈值时，将第（k + 1）帧周期中的过驱动电压切换到低于第一过驱动电压的第二过驱动电压。