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公开(公告)号：US12080717B2
公开(公告)日：2024-09-03
申请号：US16910196
申请日：2020-06-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroyuki Miyake , Hideaki Shishido , Jun Koyama
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/1255 , H01L29/7869
Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
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公开(公告)号：US12066409B2
公开(公告)日：2024-08-20
申请号：US17280327
申请日：2019-10-01
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hideaki Shishido , Takayuki Ikeda
CPC classification number: G01N29/4472 , G01N29/04 , G01N29/24 , G01N29/36 , G01N29/4427 , G01N2291/0231
Abstract: A cost of a testing device is reduced. A structure of a testing device is simplified. A testing device capable of testing with higher accuracy is provided. A testing device (10) has a structure including a sending unit (13), a receiving unit (14), a control unit (11), and a display (15). The control unit includes a memory portion (21) and an arithmetic portion (22). The sending unit has a function of generating a pulse signal for a probe (40) to generate an ultrasonic wave (51). The receiving unit has a function of generating a first signal including a first analog data (D1) on the basis of the input single input from the probe. The memory portion has a function of storing the first analog data. The arithmetic portion has a function of generating an image signal (S0) output to the display on the basis of the first analog data stored in the memory portion. The display has a function of displaying an image based on the image signal.
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公开(公告)号：US11955612B2
公开(公告)日：2024-04-09
申请号：US18093833
申请日：2023-01-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kazutaka Kuriki , Ryota Tajima , Kouhei Toyotaka , Hideaki Shishido , Toshiyuki Isa
CPC classification number: H01M10/482 , G06N3/04 , G06N3/065 , H01M10/441 , H01M10/486 , H02J7/0013 , H02J7/0047 , H02J7/007
Abstract: A power storage system with excellent characteristics is provided. A power storage system with a high degree of safety is provided. A power storage system with less deterioration is provided. A storage battery with excellent characteristics is provided. The power storage system includes a neural network and a storage battery. The neural network includes an input layer, an output layer, and one or more hidden layers between the input layer and the output layer. The predetermined hidden layer is connected to the previous hidden layer or the previous input layer by a predetermined weight coefficient, and connected to the next hidden layer or the next output layer by a predetermined weight coefficient. In the storage battery, voltage and time at which the voltage is obtained are measured as one of sets of data. The sets of data measured at different times are input to the input layer and the operational condition of the storage battery is changed in accordance with a signal output from the output layer.
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公开(公告)号：US11933974B2
公开(公告)日：2024-03-19
申请号：US17429979
申请日：2020-02-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Takayuki Ikeda , Hidetomo Kobayashi , Hideaki Shishido , Kiyotaka Kimura , Takashi Nakagawa , Kosei Nei , Kentaro Hayashi
IPC: G02B27/00 , A61B5/00 , A61B5/11 , A61B5/16 , G02B27/01 , G06F3/147 , G06T7/73 , G06V10/44 , G06V10/764 , G06V10/82 , G06V20/20 , G06V30/19 , G06V40/16 , G09G3/3225 , G11C19/28
CPC classification number: G02B27/0093 , G02B27/0101 , G02B27/0172 , G02B27/0176 , G06T7/73 , G06V10/454 , G06V10/764 , G06V10/82 , G06V20/20 , G06V40/174 , G02B2027/0138 , G02B2027/014 , G02B2027/0178 , G06T2207/30201
Abstract: An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.
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公开(公告)号：US11901485B2
公开(公告)日：2024-02-13
申请号：US17751758
申请日：2022-05-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Ryo Arasawa , Hideaki Shishido
CPC classification number: H01L33/16 , H01L27/124 , H01L27/1225
Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
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Patent Agency Ranking
公开(公告)号：US11075255B2
公开(公告)日：2021-07-27
申请号：US15854067
申请日：2017-12-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kouhei Toyotaka , Kei Takahashi , Hideaki Shishido , Shunpei Yamazaki
IPC: H01L27/32 , H01L27/02 , H01L51/56 , G09G3/20 , G06F3/041 , H01L27/12 , H01L29/66 , G09G3/3233 , H01L29/786
Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, and the display region includes a first group of pixels, a second group of pixels, a third group of pixels, a fourth group of pixels, a first scan line, a second scan line, a first signal line, and a second signal line. The first group of pixels include a first pixel and are arranged in a row direction. The second group of pixels include a second pixel and are arranged in the row direction. The third group of pixels include a first pixel and are arranged in a column direction that intersects the row direction. The fourth group of pixels include a second pixel and are arranged in the column direction. The first signal line is electrically connected to the third group of pixels and the second signal line is electrically connected to the fourth group of pixels. The first scan line is electrically connected to the first group of pixels and the second scan line is electrically connected to the second group of pixels.
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公开(公告)号：US10573667B2
公开(公告)日：2020-02-25
申请号：US15366255
申请日：2016-12-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hisao Ikeda , Kouhei Toyotaka , Hideaki Shishido , Hiroyuki Miyake , Kohei Yokoyama , Yasuhiro Jinbo , Yoshitaka Dozen , Takaaki Nagata , Shinichi Hirasa
Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.
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公开(公告)号：US10566497B2
公开(公告)日：2020-02-18
申请号：US16531204
申请日：2019-08-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Ryo Arasawa , Hideaki Shishido
Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
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公开(公告)号：US10423254B2
公开(公告)日：2019-09-24
申请号：US15159020
申请日：2016-05-19
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki Miyake , Hideaki Shishido , Susumu Kawashima , Shunpei Yamazaki
Abstract: A semiconductor device including a transistor includes a pixel circuit, a monitor circuit, and a correction circuit. The pixel circuit includes a selection transistor, a driving transistor, and a light-emitting element. The monitor circuit includes a monitor light-emitting element and a monitor transistor. The semiconductor device obtains the value of current flowing to the monitor light-emitting element and the monitor transistor and controls the value of current flowing to the light-emitting element and the driving transistor by the correction circuit.
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公开(公告)号：US10236305B2
公开(公告)日：2019-03-19
申请号：US15677125
申请日：2017-08-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroyuki Miyake , Hideaki Shishido , Jun Koyama
IPC: H01L29/12 , H01L27/12 , H01L29/786
Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
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