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公开(公告)号:US20230290789A1
公开(公告)日:2023-09-14
申请号:US18133086
申请日:2023-04-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC: H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786 , H10K59/131 , H10K59/121
CPC classification number: H01L27/1225 , G02F1/136204 , G02F1/136286 , H01L27/124 , H01L27/0266 , H01L29/7869 , H10K59/131 , H10K59/1213
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号:US20210327916A1
公开(公告)日:2021-10-21
申请号:US17365174
申请日:2021-07-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC: H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786 , H01L27/32
Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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公开(公告)号:US20190165370A1
公开(公告)日:2019-05-30
申请号:US16263134
申请日:2019-01-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Shunpei YAMAZAKI , Tomoya FUTAMURA , Tamae MORIWAKA
IPC: H01M4/36 , H01M10/0525 , H01M4/131 , H01M4/485 , H01M4/58 , H01M4/587 , H01M4/136 , H01M4/133 , H01M4/62
Abstract: To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.
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公开(公告)号:US20180203312A1
公开(公告)日:2018-07-19
申请号:US15915663
申请日:2018-03-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC: G02F1/1362 , H01L27/12 , H01L33/00 , H01L27/02
CPC classification number: G02F1/136204 , H01L27/0248 , H01L27/1225 , H01L27/124 , H01L33/0041 , H01L2924/0002 , H01L2924/00
Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
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公开(公告)号:US20170285425A1
公开(公告)日:2017-10-05
申请号:US15623838
申请日:2017-06-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC: G02F1/1362 , H01L33/00 , H01L27/02 , H01L27/12
CPC classification number: G02F1/136204 , H01L27/0248 , H01L27/1225 , H01L27/124 , H01L33/0041 , H01L2924/0002 , H01L2924/00
Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
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公开(公告)号:US20160254257A1
公开(公告)日:2016-09-01
申请号:US15150744
申请日:2016-05-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC: H01L27/02 , H01L29/786 , G02F1/1343 , G02F1/1368 , G02F1/1339 , G02F1/1333 , H01L27/12 , H01L29/24
CPC classification number: H01L27/0266 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/134309 , G02F1/13624 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/247 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
Abstract translation: 保护电路包括非线性元件,其还包括栅电极,覆盖栅电极的栅极绝缘层,一对第一和第二布线层,其端部与栅极绝缘层上的栅极重叠,并且其中 堆叠导电层和第二氧化物半导体层,以及与至少栅电极重叠并与栅极绝缘层和第一布线层的导电层的侧面部分接触的第一氧化物半导体层和 第二布线层和第二氧化物半导体层的侧面部分和顶面部分。 在栅极绝缘层上,具有不同性质的氧化物半导体层彼此结合,由此可以进行与肖特基结的稳定操作。 因此,可以降低结漏电,提高非线性元件的特性。
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公开(公告)号:US20150076503A1
公开(公告)日:2015-03-19
申请号:US14553223
申请日:2014-11-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki SAKAKURA , Shuhei TAKAHASHI , Kazuko IKEDA , Tomoya FUTAMURA
CPC classification number: H01L51/5253 , H01L27/1214 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H05B33/04
Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.
Abstract translation: 本发明的发光器件包括薄膜晶体管,覆盖薄膜晶体管的绝缘层,通过形成在绝缘层上的接触孔与薄膜晶体管电连接的电极,以及由绝缘层形成的发光元件 在与电极电连接的第一电极和第二电极之间插入发光层。 发光器件还包括仅在绝缘层和绝缘层上的电极和第一电极之间的与绝缘层不同的材料形成的层。
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