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    IMAGING DEVICE, DISTANCE ESTIMATION DEVICE, AND MOVING OBJECT
    22.
    发明申请
    IMAGING DEVICE, DISTANCE ESTIMATION DEVICE, AND MOVING OBJECT 有权

    公开(公告)号：US20220326384A1

    公开(公告)日：2022-10-13

    申请号：US17634035

    申请日：2020-08-07

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yusuke NEGORO ,  Seiichi YONEDA

    IPC: G01S17/89 ,  H01L27/146 ,  H01L31/107 ,  G01B11/22 ,  G01S7/481 ,  G01S7/4865

    Abstract: An object is to obtain accurate distance image data by denoising. Another object is to realize distance image data acquisition in a short time by reducing the frequency of accumulating. A distance image processing system including a solid-state imaging element that can be used for three-dimensionally recognizing an object is provided for the utilization of autonomous driving of passenger cars, for example. Image processing including distance information obtained by a TOF system solid-state imaging element, a so-called TOF camera, is performed by utilizing deep learning. A high-accurate distance image with noise reduced by deep learning can be obtained.

    IMAGING DEVICE AND ELECTRONIC DEVICE
    23.
    发明申请
    IMAGING DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220321794A1

    公开(公告)日：2022-10-06

    申请号：US17626566

    申请日：2020-07-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Seiichi YONEDA ,  Yusuke NEGORO

    IPC: H04N5/232 ,  H01L27/146

    Abstract: An imaging device capable of executing image processing is provided. An imaging device with low power consumption is provided. A highly reliable imaging device is provided. An imaging device with higher integration degree of pixels is provided. An imaging device manufactured at low cost is provided. The imaging device includes a photoelectric conversion device, a first transistor that is formed in a first layer and includes silicon in a channel formation layer, and a capacitor that is formed in a second layer bonded to the first layer. One of a source and a drain of the first transistor is electrically connected to one of electrodes of the photoelectric conversion device, and the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor. A pixel having a function of generating first data and a function of multiplying the first data to have a given magnification to generate second data is included. The first data and the second data each have an analog value.

    IMAGING DEVICE AND ELECTRONIC DEVICE
    24.
    发明申请
    IMAGING DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220238582A1

    公开(公告)日：2022-07-28

    申请号：US17617016

    申请日：2020-06-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiichi YONEDA ,  Yusuke NEGORO

    IPC: H01L27/146

    Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and extract data obtained by multiplying the analog data by a predetermined weight coefficient. When the data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

    IMAGING DEVICE AND ELECTRONIC DEVICE
    25.
    发明申请
    IMAGING DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250159384A1

    公开(公告)日：2025-05-15

    申请号：US19021412

    申请日：2025-01-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Seiichi YONEDA ,  Yusuke NEGORO ,  Takeya HIROSE ,  Shunsuke SATO ,  Shunpei YAMAZAKI

    IPC: H04N25/78 ,  H04N25/771 ,  H04N25/79 ,  H10K39/32

    Abstract: An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device has an additional function such as image processing, and can retain analog data obtained by an image capturing operation in pixels and extract data obtained by multiplying the analog data by a given weight coefficient. In the imaging device, the data is stored in a memory cell and pooling processing of data stored in a plurality of memory cells can be performed. The pixels are provided so as to have a region overlapping with at least one of the memory cells, a pooling processing circuit, and a reading circuit of the pixels; thus, an increase in the area of the imaging device can be inhibited even with an additional function.

    IMAGING DEVICE
    29.
    发明申请
    IMAGING DEVICE 有权

    公开(公告)号：US20230133706A1

    公开(公告)日：2023-05-04

    申请号：US17912560

    申请日：2021-04-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yusuke NEGORO ,  Seiichi YONEDA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H04N25/40

    Abstract: An imaging device having an image processing function is provided. The imaging device includes a plurality of pixels. The pixel has a function of generating first data of an n-th frame by supplying a first weight to image data obtained in the n-th frame (n is an integer greater than or equal to 2). The pixel has a function of generating first data of an n−1-th frame by supplying a second weight to image data obtained in the n−1-th frame. The pixel has a function of generating second data by adding the first data of the n−1-th frame and the first data of the n-th frame.

    Semiconductor Device and Driving Method Thereof
    30.
    发明申请
    Semiconductor Device and Driving Method Thereof 有权

    公开(公告)号：US20220416767A1

    公开(公告)日：2022-12-29

    申请号：US17779675

    申请日：2020-11-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroki INOUE ,  Seiichi YONEDA ,  Yusuke NEGORO

    IPC: H03K3/011 ,  H01L27/146 ,  H03K17/56

    Abstract: A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential. The second circuit has a function of outputting a third potential when each of the potentials of the first to n-th signals is higher than a second reference potential, and outputting the first potential when at least one of the potentials of the first to n-th signals is lower than or equal to the second reference potential.

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