公开(公告)号：US09735192B2

公开(公告)日：2017-08-15

申请号：US15161805

申请日：2016-05-23

申请人： Sony Corporation

发明人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC分类号： H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US09673235B2

公开(公告)日：2017-06-06

申请号：US15084287

申请日：2016-03-29

申请人： SONY CORPORATION

发明人： Takeshi Yanagita ,  Itaru Oshiyama ,  Takayuki Enomoto ,  Harumi Ikeda ,  Shinichiro Izawa ,  Atsuhiko Yamamoto ,  Kazunobu Ota

IPC分类号： H01L27/146

CPC分类号： H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

公开(公告)号：US09666617B2

公开(公告)日：2017-05-30

申请号：US15282826

申请日：2016-09-30

申请人： Sony Corporation

发明人： Harumi Ikeda ,  Atsuhiko Yamamoto ,  Yoshiki Ebiko ,  Takeshi Yanagita

IPC分类号： H01L27/146 ,  H04N5/378

CPC分类号： H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

摘要： An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.

公开(公告)号：US09496306B2

公开(公告)日：2016-11-15

申请号：US13792654

申请日：2013-03-11

申请人： Sony Corporation

发明人： Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Takashi Ando ,  Harumi Ikeda

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

公开(公告)号：US20160276401A1

公开(公告)日：2016-09-22

申请号：US15161805

申请日：2016-05-23

申请人： Sony Corporation

发明人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC分类号： H01L27/148

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

摘要翻译： 具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。

公开(公告)号：US20130299675A1

公开(公告)日：2013-11-14

申请号：US13792654

申请日：2013-03-11

申请人： Sony Corporation

发明人： Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Takashi Ando ,  Harumi Ikeda

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

摘要翻译： 实现适当的空穴积聚层和减少暗电流被允许变得相互兼容。 具有光电转换入射光的受光部12的固态成像装置1的特征在于，包括设置在上述受光部12的受光面12s上的膜21， 界面状态和膜22，其设置在上述膜21上以降低界面状态并具有负的固定电荷，其中，空穴积累层23设置在该光接收表面12s侧 光接收部分12。