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公开(公告)号：US09638940B2
公开(公告)日：2017-05-02
申请号：US15163178
申请日：2016-05-24
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Robert Manouvrier
CPC classification number: G02F1/0123 , G01J9/00 , G01J9/02 , G02F1/025 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/58 , G02F2203/50 , H04B10/5053 , H04B10/50575
Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.
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公开(公告)号：US09478570B2
公开(公告)日：2016-10-25
申请号：US14929077
申请日：2015-10-30
Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
Inventor： Jean-Robert Manouvrier , Pascal Fonteneau , Xavier Montagner
IPC: H01L27/146 , H01L29/423
CPC classification number: H01L27/14614 , H01L27/14607 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L29/4236
Abstract: The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.
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公开(公告)号：US20160109732A1
公开(公告)日：2016-04-21
申请号：US14981139
申请日：2015-12-28
Applicant: STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Jean-Robert Manouvrier , Frederic Boeuf
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F1/225 , G02F2001/212
Abstract: An electro-optical phase shifter to be located in an optical waveguide may include a rib of a semiconductor material extending along a length of the optical waveguide and a control structure configured to modify a concentration of carriers in the rib according to a control voltage present between first and second control terminals of the phase shifter. The control structure may include a conductive layer covering a portion of the rib and electrically connected to a first of the control terminals. An insulating layer may be configured to electrically isolate the conductive layer from the rib.
Abstract translation: 位于光波导中的电光移相器可以包括沿着光波导的长度延伸的半导体材料的肋，以及控制结构，其被配置为根据存在于所述肋之间的控制电压来修改肋中的载流子的浓度 移相器的第一和第二控制端子。 控制结构可以包括覆盖肋的一部分并电连接到第一控制端的导电层。 绝缘层可以被配置为将导电层与肋电隔离。
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公开(公告)号：US09104047B2
公开(公告)日：2015-08-11
申请号：US14263068
申请日：2014-04-28
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Robert Manouvrier
CPC classification number: G02F1/025
Abstract: A semiconductor electro-optical phase shifter may include a central zone configured to be placed in an optical waveguide and doped at a first conductivity type, a first lateral zone adjacent a first face of the central region and doped at a second conductivity type, and a second lateral zone adjacent a second face of the central zone and doped at the second conductivity type.
Abstract translation: 半导体电光移相器可以包括被配置为放置在光波导中并以第一导电类型掺杂的中心区，邻近中心区的第一面并以第二导电类型掺杂的第一横向区， 第二横向区域，邻近中心区域的第二面并以第二导电类型掺杂。
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公开(公告)号：US20190243165A1
公开(公告)日：2019-08-08
申请号：US16356915
申请日：2019-03-18
Applicant: STMicroelectronics SA
Inventor： Jean-Robert Manouvrier
CPC classification number: G02F1/0123 , G01J9/00 , G01J9/02 , G02F1/025 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/58 , G02F2203/50 , H04B10/5053 , H04B10/50575
Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.
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Patent Agency Ranking
公开(公告)号：US20190094462A1
公开(公告)日：2019-03-28
申请号：US16185654
申请日：2018-11-09
Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
Inventor： Jean-Robert Manouvrier , Jean-Francois Carpentier , Patrick LeMaitre
Abstract: An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.
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公开(公告)号：US09454023B2
公开(公告)日：2016-09-27
申请号：US14638345
申请日：2015-03-04
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Robert Manouvrier
CPC classification number: G02F1/025 , G02F1/0123 , G02F1/225 , G02F1/2255
Abstract: A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment (12) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.
Abstract translation: 半导体电光移相器可以包括衬底，形成在衬底上的光波导段（12）以及被配置为形成垂直于衬底的第一双极结的相反导电类型的第一和第二区。 移相器还可以包括被配置为反向偏置第一结的动态控制结构和被配置成引导平行于第一结的第二区中的静态电流的静态控制结构。
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公开(公告)号：US09411176B2
公开(公告)日：2016-08-09
申请号：US14492435
申请日：2014-09-22
Applicant: STMICROELECTRONICS (CROLLES 2) SAS , STMICROELECTRONICS SA
Inventor： Jean-Robert Manouvrier , Frédéric Boeuf
CPC classification number: G02F1/025 , G02F1/225 , G02F2001/212
Abstract: An electro-optical phase shifter to be located in an optical waveguide may include a rib of a semiconductor material extending along a length of the optical waveguide and a control structure configured to modify a concentration of carriers in the rib according to a control voltage present between first and second control terminals of the phase shifter. The control structure may include a conductive layer covering a portion of the rib and electrically connected to a first of the control terminals. An insulating layer may be configured to electrically isolate the conductive layer from the rib.
Abstract translation: 位于光波导中的电光移相器可以包括沿着光波导的长度延伸的半导体材料的肋，以及控制结构，其被配置为根据存在于所述肋之间的控制电压来修改肋中的载流子的浓度 移相器的第一和第二控制端子。 控制结构可以包括覆盖肋的一部分并电连接到第一控制端的导电层。 绝缘层可以被配置为将导电层与肋电隔离。
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公开(公告)号：US09372354B2
公开(公告)日：2016-06-21
申请号：US14182033
申请日：2014-02-17
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Robert Manouvrier
CPC classification number: G02F1/0123 , G01J9/00 , G01J9/02 , G02F1/025 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/58 , G02F2203/50 , H04B10/5053 , H04B10/50575
Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.
Abstract translation: 光调制器使用光电相位比较器，其被配置为以电信号的形式提供两个光波之间的相位差的量度。 相位比较器包括具有两个耦合通道的光学定向耦合器，该耦合通道分别限定用于接收要比较的两个光波的两个光学输入。 两个光电二极管被配置为分别接收定向耦合器的两个通道的光输出功率。 电路被配置为提供与两个光电二极管产生的电信号之间的差成比例的电信号作为光相移的测量。
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公开(公告)号：US09235667B2
公开(公告)日：2016-01-12
申请号：US13852162
申请日：2013-03-28
Applicant: STMicroelectronics SA
Inventor： Jean-Robert Manouvrier
IPC: G06F17/50
CPC classification number: G06F17/5036
Abstract: A model for simulating the electrical behavior of a thyristor includes a model of an NPN bipolar transistor whose emitter forms the cathode of the thyristor and the base forms a low-side control terminal of the thyristor, and a model of a PNP bipolar transistor whose emitter forms the anode of the thyristor and the base forms a high-side control terminal of the thyristor, the collector of the PNP transistor being connected to the low-side control terminal and the collector of the NPN transistor being connected to the high-side control terminal. The transistor models are present a small signal behavior over the entire range of anode currents of the thyristor, whereby the transistor models exhibit a gain drop when the anode current exits the small signal range.
Abstract translation: 用于模拟晶闸管的电气行为的模型包括其发射极形成晶闸管的阴极并且基极形成晶闸管的低侧控制端的NPN双极晶体管的模型，以及PNP双极晶体管的模型，其发射极 形成晶闸管的阳极，基极形成晶闸管的高边控制端子，PNP晶体管的集电极连接到低侧控制端子，NPN晶体管的集电极连接到高侧控制 终奌站。 晶体管模型在晶闸管的整个阳极电流范围内呈现小的信号行为，由此当阳极电流退出小信号范围时，晶体管模型呈现增益下降。
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