公开(公告)号：US20200052056A1

公开(公告)日：2020-02-13

申请号：US16539761

申请日：2019-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Yeon Keon MOON ,  Kwang Suk KIM ,  Tae Sang KIM ,  Geunchul PARK ,  Kyung Jin JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

公开(公告)号：US20240414939A1

公开(公告)日：2024-12-12

申请号：US18543846

申请日：2023-12-18

Applicant: Samsung Display Co., LTD.

Inventor： Tetsuhiro TANAKA ,  Yeon Keon MOON ,  Seok Hwan BANG

IPC: H10K59/121 ,  H10K59/12

Abstract: A display device includes a pixel circuit disposed on a base layer and including a transistor including a source electrode, a drain electrode, a gate electrode, and a semiconductor layer, and a light emitting element electrically connected to the pixel circuit. The semiconductor layer includes a low concentration area, a high concentration area, and a slope concentration area between the low concentration area and the high concentration area, which are divided based on a concentration of a carrier and are spaced apart from each other in a length direction of the base layer. The low concentration area and a portion of the slope concentration area form a channel area, and form a source area and a drain area including the high concentration area and at least another portion of the slope concentration area. In the slope concentration area, the semiconductor layer satisfies an equation.

公开(公告)号：US20230299089A1

公开(公告)日：2023-09-21

申请号：US18324949

申请日：2023-05-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon MOON ,  Tae Sang KIM ,  Joon Seok PARK ,  Myoung Hwa KIM ,  Hyung Jun KIM ,  Sang Woo SOHN ,  Hye Lim CHOI

IPC: H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/124 ,  H01L27/1225

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US20210111197A1

公开(公告)日：2021-04-15

申请号：US16906948

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon MOON ,  Tae Sang KIM ,  Joon Seok PARK ,  Myoung Hwa KIM ,  Hyung Jun KIM ,  Sang Woo SOHN ,  Hye Lim CHOI

IPC: H01L27/12

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US20200343275A1

公开(公告)日：2020-10-29

申请号：US16818310

申请日：2020-03-13

Applicant: Samsung Display Co., LTD.

Inventor： Geun Chul PARK ,  Joon Seok PARK ,  Tae Sang KIM ,  Yeon Keon MOON ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12

Abstract: A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.

公开(公告)号：US20200098924A1

公开(公告)日：2020-03-26

申请号：US16563699

申请日：2019-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Tae Sang KIM ,  Joon Seok PARK ,  Kwang Suk KIM ,  Yeon Keon MOON ,  Geunchul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/467 ,  H01L29/66

Abstract: A transistor substrate may include: a substrate; an active pattern formed on the substrate, the active pattern including an oxide semiconductor that contains tin (Sn), and the active pattern including a source region, a drain region, and a channel region that is formed between the source region and the drain region; a source protective pattern formed on the source region; a drain protective pattern formed on the drain region; a gate electrode overlapping at least a portion of the channel region; an insulation interlayer covering the source protective pattern and the drain protective pattern; a source electrode formed on the insulation interlayer, the source electrode being in contact with the source protective pattern through a source contact hole that is formed in the insulation interlayer; and a drain electrode formed on the insulation interlayer, the drain electrode being in contact with the drain protective pattern through a drain contact hole that is formed in the insulation interlayer.

公开(公告)号：US20170052417A1

公开(公告)日：2017-02-23

申请号：US15064378

申请日：2016-03-08

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Hun NOH ,  Masataka KANO ,  Yeon Keon MOON ,  Keun Kyu SONG ,  Jun Ho SONG ,  Hyun Sup LEE ,  Sang Hee JANG ,  Byung Seok CHOI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: G02F1/136227 ,  G02F1/1343 ,  G02F1/134363 ,  G02F1/136209 ,  G02F2001/134372 ,  G02F2001/13606 ,  G02F2001/13685

Abstract: Provided is a display device.The display device includes: a substrate; a light blocking pattern disposed on the substrate; a semiconductor pattern disposed on the light blocking pattern; a gate insulating layer disposed on the semiconductor pattern; a gate wiring; an interlayer insulating layer formed on the gate wiring; a first contact hole for exposing the source area; a data wiring disposed to extend in the second direction on the interlayer insulating layer and electrically connected to the source area via the first contact hole; a first passivation layer disposed on the data wiring; a second contact hole, which is disposed between the neighboring protrusion portions of the light blocking pattern so as not to overlap the light blocking pattern, and exposes the drain area; and a pixel electrode disposed on the first passivation layer and electrically connected to the drain area through the second contact hole.

Abstract translation: 显示装置包括：基板; 设置在所述基板上的遮光图案; 设置在所述遮光图案上的半导体图案; 设置在所述半导体图案上的栅极绝缘层; 门接线; 形成在栅极布线上的层间绝缘层; 用于暴露所述源区的第一接触孔; 数据线布置成在层间绝缘层上沿第二方向延伸并且经由第一接触孔电连接到源极区; 设置在数据布线上的第一钝化层; 第二接触孔，其设置在所述遮光图案的相邻突出部之间，以便不与所述遮光图案重叠，并且露出所述漏区; 以及设置在所述第一钝化层上并通过所述第二接触孔电连接到所述漏极区的像素电极。

公开(公告)号：US20160133754A1

公开(公告)日：2016-05-12

申请号：US14661470

申请日：2015-03-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon MOON ,  Masataka KANO ,  Sung-Hoon YANG ,  Ji Hun LIM ,  So Young KOO ,  Myoung Hwa KIM ,  Jun Hyung LIM

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/66

CPC classification number: H01L29/78645 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78648

Abstract: A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.

Abstract translation: 薄膜晶体管衬底包括衬底，衬底上的底栅，衬底上的第一绝缘层和底栅，第一绝缘层上的漏极，第一绝缘层上的源，源包括第一绝缘层 漏极的第一侧的源极和在漏极的第二侧的第二源极，在第一绝缘层上的有源层，有源层包括接触漏极和第一源极的第一有源层和与第一源极接触的第二有源层 漏极和第二源极，漏极，源极和有源层上的第二绝缘层，以及第二绝缘层上的顶栅极。