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公开(公告)号：US20230299089A1
公开(公告)日：2023-09-21
申请号：US18324949
申请日：2023-05-26
发明人： Yeon Keon MOON , Tae Sang KIM , Joon Seok PARK , Myoung Hwa KIM , Hyung Jun KIM , Sang Woo SOHN , Hye Lim CHOI
IPC分类号： H01L27/12
CPC分类号： H01L27/1237 , H01L27/1255 , H01L27/1259 , H01L27/124 , H01L27/1225
摘要： A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.
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公开(公告)号：US20210327910A1
公开(公告)日：2021-10-21
申请号：US17157184
申请日：2021-01-25
发明人： Joon Seok PARK , So Young KOO , Eok Su KIM , Hyung Jun KIM , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON
IPC分类号： H01L27/12
摘要： A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.
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公开(公告)号：US20210111197A1
公开(公告)日：2021-04-15
申请号：US16906948
申请日：2020-06-19
发明人： Yeon Keon MOON , Tae Sang KIM , Joon Seok PARK , Myoung Hwa KIM , Hyung Jun KIM , Sang Woo SOHN , Hye Lim CHOI
IPC分类号： H01L27/12
摘要： A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.
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公开(公告)号：US20210408195A1
公开(公告)日：2021-12-30
申请号：US17313046
申请日：2021-05-06
申请人： Samsung Display Co., Ltd. , Industry-University Cooperation Foundation Hanyang University ERICA Campus
发明人： Sang Woo SOHN , Saeroonter OH , Joon Seok PARK , Young Joon CHOI , Su Hyun KIM , Jun Hyung LIM
IPC分类号： H01L27/32 , H01L51/56 , G09G3/3225
摘要： A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.
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公开(公告)号：US20200235196A1
公开(公告)日：2020-07-23
申请号：US16704437
申请日：2019-12-05
发明人： Dong Min LEE , Sang Woo SOHN , Do Keun SONG , Sang Won SHIN , Hyun Eok SHIN , Su Kyoung YANG , Kyeong Su KO , Sang Gab KIM , Joon Geol LEE
摘要： Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.
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公开(公告)号：US20170152596A1
公开(公告)日：2017-06-01
申请号：US15243162
申请日：2016-08-22
发明人： Sang Woo SOHN , Hyun Ju KANG , Chang Oh JEONG
CPC分类号： C23C14/352 , C23C14/35 , H01J37/3405 , H01J37/3417 , H01J37/3423 , H01J37/3441 , H01J37/3455
摘要： A sputtering device includes a plurality of sputtering targets provided in a process chamber, a substrate holder facing the plurality of sputtering targets and configured to support a substrate, and a deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate. At least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate and a remainder of the plurality of sputtering targets are flat facing toward the substrate.
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公开(公告)号：US20170110299A1
公开(公告)日：2017-04-20
申请号：US15238377
申请日：2016-08-16
发明人： Chang Oh JEONG , Hyun Eok SHIN , Hyun Ju KANG , Joon Yong PARK , Sang Woo SOHN , Sang Won SHIN , Dong Hee LEE
CPC分类号： H01J37/3423 , C23C14/3407 , C23C14/3464 , H01J37/3417 , H01J37/3426 , H01J37/3429
摘要： A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.
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8.发明公开公开(公告)号：US20240121998A1
公开(公告)日：2024-04-11
申请号：US18446234
申请日：2023-08-08
发明人： Sun Hee LEE , Eun Hye KO , Sang Woo SOHN , Jung Hoon LEE , Hyun Mo LEE , Hyun Jun JEONG
IPC分类号： H10K59/124 , H10K59/12 , H10K59/131
CPC分类号： H10K59/124 , H10K59/1201 , H10K59/131
摘要： A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).
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公开(公告)号：US20210056898A1
公开(公告)日：2021-02-25
申请号：US16850775
申请日：2020-04-16
发明人： Joon Seok PARK , Yeon Keon MOON , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC分类号： G09G3/3225 , G09G3/3266 , G09G3/3275 , H01L27/32
摘要： A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.
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公开(公告)号：US20160197192A1
公开(公告)日：2016-07-07
申请号：US14841559
申请日：2015-08-31
发明人： Hyun Ju KANG , Dong Hee LEE , Gwang Min CHA , Sang Won SHIN , Sang Woo SOHN
IPC分类号： H01L29/786 , H01L29/423 , H01L21/441 , H01L29/45 , H01L21/4763 , H01L29/66 , H01L29/417
CPC分类号： H01L29/66969 , H01L21/47635 , H01L21/76834 , H01L21/76852 , H01L21/76855 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/78618 , H01L29/7869
摘要： A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.
摘要翻译： 一种薄膜晶体管阵列面板，包括：基板; 设置在所述基板上的栅电极; 设置在所述基板上的半导体层; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 设置在半导体层上的源电极和面对源电极的漏电极; 覆盖源电极和漏电极的金属氧化物层; 以及覆盖所述源电极，所述漏电极和所述金属氧化物层的钝化层，其中所述源电极和所述漏极包括第一材料和第二材料，所述第一材料和第二材料被添加到所述第一材料中，并且所述金属包括在所述金属氧化物层中 通过扩散第二材料形成。
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