公开(公告)号：US10114250B2

公开(公告)日：2018-10-30

申请号：US14876546

申请日：2015-10-06

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Yun Jo ,  Sung Hoon Yang

IPC: G02F1/1335 ,  G02B1/18 ,  G02F1/1333

Abstract: A liquid crystal display includes: a lower display panel including a lower polarizing plate disposed between a lower transparent substrate and a passivation layer of the lower display panel; and an upper display panel including an upper polarizing plate disposed between an upper transparent substrate and a passivation layer of the upper display panel, wherein at least one of the lower polarizing plate and the upper polarizing plate is a reflection type polarizing plate and includes a plurality of linear patterns arranged so as to be extended in one direction and a hydrophobic layer covering at least portion of side wall portions of the linear patterns.

公开(公告)号：US10014362B2

公开(公告)日：2018-07-03

申请号：US15263245

申请日：2016-09-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Yun Jo ,  Su Bin Bae ,  Jang-Kyum Kim ,  Jeong Do Yang ,  Chung-Seok Lee

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3279 ,  H01L27/3276 ,  H01L51/0097 ,  H01L2251/5338

Abstract: A display device is disclosed. In one aspect, the display device includes a substrate including a display area and a non-display area and an input wiring portion and an output wiring portion formed in the non-display area. The display device also includes a driver integrated circuit (IC) formed over the substrate and electrically connected to the input and output wiring portions. Each of the input and output wiring portions includes a metal layer and a metal carbide layer that covers the metal layer.

公开(公告)号：US09917108B2

公开(公告)日：2018-03-13

申请号：US15445650

申请日：2017-02-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Yun Jo ,  Ki Seong Seo ,  Eun Jeong Cho

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

公开(公告)号：US09536908B2

公开(公告)日：2017-01-03

申请号：US14799995

申请日：2015-07-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Chul-Hyun Baek ,  Eun Jeong Cho ,  Jung Yun Jo

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/0217 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/78669 ,  H01L29/78678

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Abstract translation: 薄膜晶体管阵列面板包括绝缘基板，设置在绝缘基板上的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线，以及 包括源电极，设置在半导体层上并面对源电极的漏电极，设置在栅绝缘层上的第一电极，设置在第一电极上并包括氮化硅的第一钝化层，设置在第一电极上的第二钝化层 第一钝化并且包括氮化硅，以及设置在钝化层上的第二电极，其中第一钝化层中氮 - 氢键与硅 - 氢键的第一比例不同于氮 - 氢键与硅的第二比率 在第二钝化层中的氢键。