公开(公告)号：US20210198801A1

公开(公告)日：2021-07-01

申请号：US17126902

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Chan KWAK ,  Takayoshi SASAKI ,  Yasuo EBINA ,  Changsoo LEE ,  Dohwon JUNG ,  Giyoung JO ,  Takaaki TANIGUCHI

IPC: C30B1/02 ,  C03C17/23 ,  C03C17/00

Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

公开(公告)号：US20210153300A1

公开(公告)日：2021-05-20

申请号：US17137969

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Seyun KIM ,  Haengdeog KOH ,  Doyoon KIM ,  Hajin KIM ,  Soichiro MIZUSAKI ,  Minjong BAE ,  Changsoo LEE

IPC: H05B1/02 ,  H05B3/26

Abstract: Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.

公开(公告)号：US20190037644A1

公开(公告)日：2019-01-31

申请号：US16045834

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Seyun KIM ,  Haengdeog KOH ,  Doyoon KIM ,  Hajin KIM ,  Soichiro MIZUSAKI ,  Minjong BAE ,  Changsoo LEE

IPC: H05B1/02

Abstract: Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.

公开(公告)号：US20170059761A1

公开(公告)日：2017-03-02

申请号：US15090959

申请日：2016-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsik SHIM ,  Hongseok LEE ,  Seogwoo HONG ,  Changsoo LEE ,  Hyunjoon KIM ,  Bongsu SHIN

IPC: F21V8/00 ,  G02B27/22

CPC classification number: G02B6/005 ,  G02B6/0051 ,  G02B6/0053 ,  G02B6/0055 ,  G02B27/22

Abstract: A backlight unit using a micro optical switch and a three-dimensional (3D) image display device are provided. The backlight unit includes a light source configured to irradiate light, a light guide plate configured to guide the irradiated light, an optical switch array including micro optical switches disposed above the light guide plate for each of cells of the backlight unit, and a lens array disposed above and corresponding to the optical switch array. Each of the micro optical switches includes a substrate, a first electrode layer disposed on the substrate and including first holes, and a second electrode layer spaced apart from the first electrode layer and including second holes not facing the first holes.

Abstract translation: 提供了使用微型光学开关和三维（3D）图像显示装置的背光单元。 背光单元包括被配置为照射光的光源，被配置为引导照射的光的导光板，包括设置在导光板上方的微型光开关的光开关阵列，用于背光单元的每个单元，以及透镜阵列 设置在光开关阵列上方并对应于光开关阵列。 每个微型光学开关包括基板，设置在基板上并包括第一孔的第一电极层和与第一电极层间隔开的第二电极层，并且包括不面向第一孔的第二孔。

公开(公告)号：US20240105764A1

公开(公告)日：2024-03-28

申请号：US18168068

申请日：2023-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong Kim ,  Yong-Hee Cho ,  Cheheung Kim ,  Jooho Lee

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/31 ,  H10B12/34

Abstract: A capacitor includes a lower electrode, an upper electrode disposed to face the lower electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes a first lower electrode layer apart from the dielectric layer and a second lower electrode layer between the first lower electrode layer and the dielectric layer. The second lower electrode layer includes vanadium oxide.

公开(公告)号：US20230143124A1

公开(公告)日：2023-05-11

申请号：US17861577

申请日：2022-07-11

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo LEE ,  Sangwoon LEE ,  Yongsung KIM ,  Jinhong KIM ,  Hyungjun KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/008

CPC classification number: H01L28/55 ,  H01L27/10852 ,  H01G4/008 ,  H01L28/75

Abstract: A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.

公开(公告)号：US20220406884A1

公开(公告)日：2022-12-22

申请号：US17844896

申请日：2022-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Changsoo LEE ,  Yong-Hee CHO ,  Yongsung KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

公开(公告)号：US20210122644A1

公开(公告)日：2021-04-29

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO ,  Hyeoncheol PARK ,  Changsoo LEE

IPC: C01G33/00 ,  H01L27/108 ,  H01L49/02

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

公开(公告)号：US20210110975A1

公开(公告)日：2021-04-15

申请号：US17038904

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

Inventor： Hyungjun KIM ,  Taniguchi TAKAAKI ,  Sasaki TAKAYOSHI ,  Osada MINORU ,  Chan KWAK ,  Youngnam KWON ,  Changsoo LEE

IPC: H01G4/12 ,  H01L49/02 ,  H01G4/005

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn−3CnO3n+1   wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

公开(公告)号：US20200337119A1

公开(公告)日：2020-10-22

申请号：US16919792

申请日：2020-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiesang SOHN ,  Seyun KIM ,  Haengdeog KOH ,  Doyoon KIM ,  Soichiro MIZUSAKI ,  Jinhong KIM ,  Hajin KIM ,  Minjong BAE ,  Changsoo LEE

IPC: H05B1/02 ,  H05B3/14 ,  B29C70/88 ,  C03C14/00 ,  B29C70/02 ,  C03C4/14 ,  C03C17/00 ,  C03C8/16 ,  C03C8/14 ,  H05B3/26

Abstract: A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.