中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

32 records (took 0.019 seconds)

    ELECTROLYTE FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME
    21.
    发明申请
    ELECTROLYTE FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME 有权
    用于二次电池和二次电池的电解液，包括其中的电池

    公开(公告)号：US20170077549A1

    公开(公告)日：2017-03-16

    申请号：US15168465

    申请日：2016-05-31

    Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

    Inventor： Insun Park ,  Hosang Park ,  Jinah Seo ,  Yoonsok Kang ,  Dongyoung Kim ,  Minsik Park

    IPC: H01M10/0565 ,  H01M4/04 ,  H01M10/0525

    CPC classification number: H01M10/0565 ,  H01M4/04 ,  H01M10/0525 ,  H01M10/0567 ,  H01M10/0569

    Abstract: An electrolyte for a secondary battery includes a non-aqueous solvent; a lithium salt; and a heterocyclic compound represented by Formula 1: wherein, in Formula 1, R1 and R2 are each independently selected from hydrogen, a halogen group, a cyano group, a hydroxy group, a nitro group, —C(═O)Ra, —C(═O)ORa, —OCO(ORa), —C═N(Ra), a substituted or unsubstituted C1-C20 alkyl group, and a combination thereof, wherein Ra is selected from hydrogen and a C1-C10 alkyl group, and, provided that at least one selected from R1 and R2 is selected from a halogen group, a cyano group, a hydroxy group, a nitro group, —C(═O)Ra, —C(═O)ORa, a substituted or unsubstituted C1-C20 alkyl group, and a combination thereof.

    Abstract translation: 其中，在式1中，R 1和R 2各自独立地选自氢，卤素基，氰基，羟基，硝基，-C（= O）R a，-C（= O）OR a，-OCO （OR a），-C≡N（R a），取代或未取代的C 1 -C 20烷基及其组合，其中R a选自氢和C 1 -C 10烷基，并且如果选自 R 1和R 2选自卤素基团，氰基基团，羟基基团，硝基基团，-C（= O）R a，-C（= O）OR a，取代或未取代的C 1 -C 20烷基， 的组合。

    SEMICONDUCTOR MEMORY DEVICE
    22.
    发明公开
    SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20240334684A1

    公开(公告)日：2024-10-03

    申请号：US18536334

    申请日：2023-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongyoung Kim ,  Yoongoo Kang ,  Jaehong Park

    IPC: H10B12/00

    CPC classification number: H10B12/485 ,  H10B12/482

    Abstract: A semiconductor memory device includes an active pattern on a substrate and at least partially surrounded by a device isolation pattern, a bit line that extends on a center portion of the active pattern in a first direction that is parallel to a bottom surface of the substrate, and a bit line contact between the bit line and the active pattern. The bit line contact includes a metallic material. A width of the bit line contact at a first level and in a second direction is greater than a width of a bottom surface of the bit line contact in the second direction. The second direction intersects the first direction. The first level is between a top surface of the device isolation pattern and the substrate.

    INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
    24.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210118705A1

    公开(公告)日：2021-04-22

    申请号：US16882494

    申请日：2020-05-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byoungdeog Choi ,  Dongyoung Kim

    IPC: H01L21/67 ,  H01L21/02 ,  H01L21/768

    Abstract: An integrated circuit (IC) device includes a lower electrode including a main portion having a sidewall with at least one step portion, and a top portion having a width less than that of the main portion in a lateral direction. An upper support pattern contacts the top portion of the lower electrode. The upper support pattern includes a seam portion. To manufacture an IC device, a mold pattern and an upper sacrificial support pattern through which a plurality of holes pass are formed on a substrate. A plurality of lower electrodes are formed inside the plurality of holes. A peripheral space is formed on the mold pattern. An enlarged peripheral space is formed by reducing a width and a height of the top portion. An upper support pattern is formed to fill the enlarged peripheral space.

Patent Agency Ranking