公开(公告)号：US11670680B2

公开(公告)日：2023-06-06

申请号：US17559347

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Jung ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/1037 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device including: an active pattern on a substrate, the active pattern including a recess, the recess having a “V” shape; a growth prevention pattern on the recess; gate structures on portions of the active pattern at opposite sides of the recess; channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the channels extending through one of the gate structures; and a source/drain layer on the growth prevention pattern, the source/drain layer contacting the channels.

公开(公告)号：US11417776B2

公开(公告)日：2022-08-16

申请号：US16715431

申请日：2019-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sujin Jung ,  Junbeom Park ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02

Abstract: A semiconductor device, including a silicon on insulator (SOI) substrate is disclosed. The device may include gate structures formed on the SOI substrate and being spaced apart from each other in a horizontal direction, and a plurality of channels spaced apart from each other in a vertical direction. Each of the channels may extend through each of the gate structures in the horizontal direction. The device may include a seed layer and a source/drain region. The source/drain region may be connected to the channels, and each sidewall of the source/drain region in the horizontal direction may have a concave-convex shape. The device may include a protruding portion of the source/drain region formed between the gate structures that protrudes in the horizontal direction compared to a non-protruding portion of the source/drain region formed between the channels.