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    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200381563A1

    公开(公告)日：2020-12-03

    申请号：US16734537

    申请日：2020-01-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunguk Jang ,  Kihwan Kim ,  Sujin Jung ,  Youngdae Cho

    IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08

    Abstract: A semiconductor device includes an active region on a substrate extending in a first direction, the active region having an upper surface and sidewalls, a plurality of channel layers above the active region to be vertically spaced apart from each other, a gate electrode extending in a second direction to intersect the active region and partially surrounding the plurality of channel layers, and a source/drain region on the active region on at least one side of the gate electrode and in contact with the plurality of channel layers, and extending from the sidewalls of the active region having a major width in the second direction in a first region adjacent to a lowermost channel layer adjacent to the active region among the plurality of channel layer.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200381562A1

    公开(公告)日：2020-12-03

    申请号：US16715431

    申请日：2019-12-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sujin Jung ,  Junbeom Park ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

    IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

    Abstract: A semiconductor device, including a silicon on insulator (SOI) substrate is disclosed. The device may include gate structures formed on the SOI substrate and being spaced apart from each other in a horizontal direction, and a plurality of channels spaced apart from each other in a vertical direction. Each of the channels may extend through each of the gate structures in the horizontal direction. The device may include a seed layer and a source/drain region. The source/drain region may be connected to the channels, and each sidewall of the source/drain region in the horizontal direction may have a concave-convex shape. The device may include a protruding portion of the source/drain region formed between the gate structures that protrudes in the horizontal direction compared to a non-protruding portion of the source/drain region formed between the channels.

    SEMICONDUCTOR DEVICES
    4.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230420535A1

    公开(公告)日：2023-12-28

    申请号：US18195074

    申请日：2023-05-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kanghun Moon ,  Kyungho Kim ,  Kihwan Kim ,  Choeun Lee ,  Yonguk Jeon

    IPC: H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06 ,  H01L29/775

    CPC classification number: H01L29/42392 ,  H01L29/66545 ,  H01L29/41775 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/775

    Abstract: A semiconductor device includes: an active region on a substrate extending in a first direction; a plurality of semiconductor layers spaced apart from each in a vertical direction on the active region, the plurality of semiconductor layers including lower and upper semiconductor layers; a gate structure on the substrate extending in a second direction to intersect the active region and the plurality of semiconductor layers; and a source/drain region on the active region and contacting the plurality of semiconductor layers. The source/drain region includes first epitaxial layers, including first layers on a side surface of the lower semiconductor layer and a second layer provided on and contacting the active region, and a second epitaxial layer contacts a side surface of the upper semiconductor layer in the first direction, and the first layer is between the second epitaxial layer and the side surface of the lower semiconductor layer.

    Electronic apparatus including projector
    5.
    发明授权
    Electronic apparatus including projector 有权

    公开(公告)号：US11832030B2

    公开(公告)日：2023-11-28

    申请号：US17432728

    申请日：2019-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinhak Lee ,  Kihwan Kim ,  Younjung Kim ,  Junyoung Kim ,  Sanghee Park ,  Yunson Yoo ,  Minyoung Lee ,  Ilkwang Choi

    IPC: H04N9/31 ,  G06V20/52 ,  H04N23/57

    CPC classification number: H04N9/317 ,  G06V20/52 ,  H04N9/3144 ,  H04N23/57

    Abstract: An electronic apparatus according to various embodiments disclosed in the disclosure may comprise: a first housing rotatable about a first axis; a projector module coupled to a portion of the first housing and rotatable about a second axis perpendicular to the first axis; a vision sensor module rotatable about the first axis; a second housing; a first driving device disposed inside the first housing and capable of transmitting power to each of the projector module and the first housing; and a second driving device disposed inside the second housing and capable of transmitting power to the vision sensor module. According to the various embodiments, the projector module can rotate independently of the first housing in the direction of the second axis, and the vision sensor module can rotate independently of the first housing in the direction of the first axis.

    SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220209013A1

    公开(公告)日：2022-06-30

    申请号：US17499979

    申请日：2021-10-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kihwan Kim ,  Sunguk Jang ,  Sujin Jung ,  Youngdae Cho

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66

    Abstract: A semiconductor device includes an active region extending in a first direction; a plurality of channel layers on the active region; a gate structure extending in a second direction; and a source/drain region disposed on the active region, and connected to each of the plurality of channel layers, wherein the source/drain region includes a first epitaxial layer having a lower end portion and a sidewall portion extending continuously along lateral surfaces of the plurality of channel layers, the first epitaxial layer doped with a first impurity; and a second epitaxial layer on the first epitaxial layer, having a composition, different from a composition of the first epitaxial layer, and doped with a second impurity, wherein diffusivity of the first impurity in the composition of the first epitaxial layer is lower than the diffusivity that the second impurity would have in the composition of the first epitaxial layer.

    Semiconductor devices
    9.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11152517B2

    公开(公告)日：2021-10-19

    申请号：US16734537

    申请日：2020-01-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunguk Jang ,  Kihwan Kim ,  Sujin Jung ,  Youngdae Cho

    IPC: H01L29/08 ,  H01L29/786 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

    Abstract: A semiconductor device includes an active region on a substrate extending in a first direction, the active region having an upper surface and sidewalls, a plurality of channel layers above the active region to be vertically spaced apart from each other, a gate electrode extending in a second direction to intersect the active region and partially surrounding the plurality of channel layers, and a source/drain region on the active region on at least one side of the gate electrode and in contact with the plurality of channel layers, and extending from the sidewalls of the active region having a major width in the second direction in a first region adjacent to a lowermost channel layer adjacent to the active region among the plurality of channel layer.

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