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    Semiconductor devices and methods of manufacturing the same
    23.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US11239344B2

    公开(公告)日：2022-02-01

    申请号：US16686378

    申请日：2019-11-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun Kwan Yu ,  Seung Hun Lee ,  Yang Xu

    IPC: H01L29/66 ,  H01L29/165 ,  H01L29/201 ,  H01L29/20

    Abstract: A method of manufacturing a semiconductor device, the method including: forming, in a first region of a substrate, an active fin and a sacrificial gate structure intersecting the active fin; forming a first spacer and a second spacer on the substrate to cover the sacrificial gate structure; forming a mask in a second region of the substrate to expose the first region of the substrate; removing the second spacer from the first spacer in the first region of the substrate by using the mask; forming recesses at opposite sides of the sacrificial gate structure by removing portions of the active fin; forming a source and a drain in the recesses; and forming an etch-stop layer to cover both sidewalls of the sacrificial gate structure and a top surfaces of the source and drain.

    WASHING APPARATUS AND CONTROLLING METHOD THEREOF
    27.
    发明申请
    WASHING APPARATUS AND CONTROLLING METHOD THEREOF 审中-公开
    洗衣机及其控制方法

    公开(公告)号：US20160355967A1

    公开(公告)日：2016-12-08

    申请号：US15172084

    申请日：2016-06-02

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Tae-Kil Kim ,  Young Jin Um ,  Kyu Nam Lee ,  Sung Mo Lee ,  Seung Hun Lee

    IPC: D06F37/40 ,  D06F35/00 ,  D06F37/30 ,  D06F23/04

    Abstract: In accordance with an aspect of the present disclosure, a washing apparatus including a main motor configured to generate a rotational force and provide the rotational force to a washing shaft; a coupling disposed above the main motor and selectively transmitting the rotational force of the main motor to a spin-drying shaft by vertically moving; a clutch motor configured to generate a tensile force in a radial direction of the coupling; a clutch lever configured to decouple the main motor from the coupling by moving the coupling upward using the tensile force of the clutch motor; and a controller configured to rotate the main motor in a mode switching section from a spin-drying mode, in which the coupling is coupled to the main motor, to a washing mode, in which the coupling is decoupled from the main motor, or from the washing mode to the spin-drying mode.

    Abstract translation: 根据本公开的一个方面，一种洗涤装置，包括主电动机，其构造成产生旋转力并将旋转力提供给洗涤轴; 耦合器设置在主电动机上方，并通过垂直移动选择性地将主电动机的旋转力传递到旋转干燥轴; 离合器马达，其构造成在联接器的径向方向上产生张力; 离合器杆，其构造成通过使用离合器马达的拉力向上移动联接器来使主马达与联轴器脱离; 以及控制器，被配置为将模式切换部分中的主电动机从耦合耦合到主电动机的旋转干燥模式旋转到洗涤模式，其中联接器与主电动机分离，或者从 将洗涤模式转换为旋转干燥模式。

    Method for Manufacturing a Transistor Device
    28.
    发明申请
    Method for Manufacturing a Transistor Device 有权
    制造晶体管器件的方法

    公开(公告)号：US20150287807A1

    公开(公告)日：2015-10-08

    申请号：US14667376

    申请日：2015-03-24

    Applicant: IMEC VZW ,  Samsung Electronics Co., Ltd.

    Inventor： Seung Hun Lee ,  Eneman Geert

    IPC: H01L29/66 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165 ,  H01L29/205 ,  H01L21/3065 ,  H01L21/02

    CPC classification number: H01L29/66545 ,  H01L21/3065 ,  H01L21/3083 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/7848

    Abstract: A method for manufacturing a transistor device comprising a channel layer is disclosed. In one example, the method includes providing a substrate, epitaxially growing a strained layer on the substrate (defect free), epitaxially growing the channel layer on the epitaxially grown strained layer, and providing a gate structure on the channel layer. In this example, the method also includes selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate. The protrusion may comprise a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, and may allow for elastic relaxation in the portions.

    Abstract translation: 公开了一种制造包括沟道层的晶体管器件的方法。 在一个实例中，该方法包括提供衬底，在衬底上外延生长应变层（无缺陷），外延生长外延生长的应变层上的沟道层，并在沟道层上提供栅极结构。 在该示例中，该方法还包括选择性地蚀刻到沟道层中并且至少部分地在外延生长的应变层中蚀刻，从而使用栅极结构作为掩模，从而产生从衬底延伸的突起。 突起可以包括沟道层的一部分和外延生长的应变层的至少上部，并且可以允许部分中的弹性松弛。

    Method for Forming a Strained Semiconductor Structure
    29.
    发明申请
    Method for Forming a Strained Semiconductor Structure 有权
    形成应变半导体结构的方法

    公开(公告)号：US20140377936A1

    公开(公告)日：2014-12-25

    申请号：US14313928

    申请日：2014-06-24

    Applicant: IMEC VZW ,  Samsung Electronics Co. Ltd.

    Inventor： Seung Hun Lee ,  Liesbeth Witters ,  Roger Loo

    IPC: H01L21/02 ,  H01L21/762

    CPC classification number: H01L21/02658 ,  H01L21/02587 ,  H01L21/3065 ,  H01L21/76224 ,  H01L29/1054

    Abstract: The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer.

    Abstract translation: 本发明涉及形成应变半导体结构的方法。 该方法包括提供应变松弛缓冲层，在应变松弛缓冲层上形成牺牲层，通过牺牲层形成浅沟槽隔离结构，去除牺牲层上的氧化物层的至少一部分，蚀刻通过牺牲层 使得应变松弛缓冲层的一部分被暴露，在应变松弛缓冲层的暴露部分上形成应变半导体结构。

    Semiconductor device with source/drain pattern including buffer layer
    30.
    发明授权
    Semiconductor device with source/drain pattern including buffer layer 有权

    公开(公告)号：US12027596B2

    公开(公告)日：2024-07-02

    申请号：US18201308

    申请日：2023-05-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ryong Ha ,  Dongwoo Kim ,  Gyeom Kim ,  Yong Seung Kim ,  Pankwi Park ,  Seung Hun Lee

    IPC: H01L29/417 ,  H01L29/10 ,  H01L29/423

    CPC classification number: H01L29/41758 ,  H01L29/1033 ,  H01L29/42356

    Abstract: A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

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