公开(公告)号：US20230187175A1

公开(公告)日：2023-06-15

申请号：US17859316

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyosin KIM ,  Sungyong LIM ,  Minsung KIM ,  Dongyub KIM ,  Sungyeol KIM ,  Jongbeom MOON ,  Seungbo SHIM

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01J2237/24564

Abstract: Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.

公开(公告)号：US20230079189A1

公开(公告)日：2023-03-16

申请号：US17992333

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hankon KIM ,  Junghyung KIM ,  Daehee PARK ,  Junkyu PARK ,  Dongil SON ,  Jaehoon SONG ,  Seungbo SHIM ,  Duhoon JUNG ,  Myungkyoon CHUNG

IPC: H04M1/02 ,  G06F3/01 ,  H02K7/14

Abstract: An electronic device is provided. The electronic device comprising a flexible display includes a first area and a second area extending from the first area, a motor module configured to move at least a part of the second area according to a driving state in the first state and the second state, and a processor electrically connected to the flexible display and the motor module. The processor identifies a characteristic value related to the motor module when being changed from the first state to the second state and controls the motor module such that an area exposed to the outside of the electronic device among the second area is changed based on the identified characteristic value.

公开(公告)号：US20210104382A1

公开(公告)日：2021-04-08

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200234965A1

公开(公告)日：2020-07-23

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun KANG ,  Dougyong SUNG ,  Seungbo SHIM ,  Junghyun CHO ,  Myungsun CHOI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.