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    ELECTRONIC DEVICE FOR PROVIDING MOBILE HOTSPOT AND METHOD OF OPERATING ELECTRONIC DEVICE TO PROVIDE MOBILE HOTSPOT
    23.
    发明申请
    ELECTRONIC DEVICE FOR PROVIDING MOBILE HOTSPOT AND METHOD OF OPERATING ELECTRONIC DEVICE TO PROVIDE MOBILE HOTSPOT 有权

    公开(公告)号：US20210045057A1

    公开(公告)日：2021-02-11

    申请号：US16988549

    申请日：2020-08-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungkuk SEO ,  Seungjae LEE ,  Hyundo LEE

    IPC: H04W52/02 ,  H04W4/80

    Abstract: According to an embodiment, an electronic device comprises a communication module and at least one processor. The at least one processor is configured to establish a first network connection with a first external electronic device via a first communication module of the communication module, identify a first distance between the electronic device and the first external electronic device, identify first state information about the first external electronic device, and control a reception module of the first communication module to remain in a sleep state during a sleep time identified based on the first state information and the first distance. Other various embodiments are possible as well.

    INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE
    28.
    发明申请
    INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE 有权

    公开(公告)号：US20250056897A1

    公开(公告)日：2025-02-13

    申请号：US18794027

    申请日：2024-08-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Duckseoung KANG ,  Sangdeok KWON ,  Gibum KIM ,  Seungjae LEE

    IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861

    Abstract: An integrated circuit device includes: a substrate including a first surface and a second surface that is opposite to the first surface; and a diode structure including: an upper semiconductor layer disposed on the first surface of the substrate and including a first dopant of a first conductivity type; a lower semiconductor layer disposed on the second surface of the substrate and including a second dopant of a second conductivity type that is different from the first conductivity type; and a first well region provided in a portion of the substrate that is between the upper semiconductor layer and the lower semiconductor layer, wherein the first well region is in contact with the upper semiconductor layer or the lower semiconductor layer.

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