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公开(公告)号:US20210202833A1
公开(公告)日:2021-07-01
申请号:US16875119
申请日:2020-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
Abstract: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号:US20200350497A1
公开(公告)日:2020-11-05
申请号:US16691818
申请日:2019-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungho YOON , Soichiro MIZUSAKI , Youngjin CHO
IPC: H01L45/00
Abstract: A variable resistance memory device includes a first conductive line extending in a first direction, a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line, a fixed resistance layer between the first conductive line and the second conductive line, and a variable resistance layer between the first conductive line and the second conductive line, wherein the fixed resistance layer and the variable resistance layer are electrically connected in parallel to each other between the first conductive line and the second conductive line.
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公开(公告)号:US20190303045A1
公开(公告)日:2019-10-03
申请号:US16443551
申请日:2019-06-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjin CHO , Hee Hyun NAM , Hyo-Deok SHIN , Junghwan RYU
Abstract: An operational method of a memory module is provided. The method includes receiving, from an external of the memory module, a first command and a first address in synchronization with clock signals. Status information is output through a signal line, when first data corresponding the first address is available in a data buffer in response to the first command. A second command in synchronization with the clock signals after the transmitting the status information is received from the external of the memory module, a second command. In response to the second command, the first data being available in the data buffer is output through data lines.
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公开(公告)号:US20190278487A1
公开(公告)日:2019-09-12
申请号:US16414893
申请日:2019-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjin CHO , Sungyong Seo , Sun-Young Lim , Uksong Kang , Chankyung Kim , Duckhyun Chang , JinHyeok Choi
IPC: G06F3/06 , G06F12/0893 , G11C11/00 , G06F13/16 , G06F12/0868 , G11C16/26 , G11C16/10
Abstract: A nonvolatile memory device includes a nonvolatile memory, a volatile memory being a cache memory of the nonvolatile memory, and a first controller configured to control the nonvolatile memory. The nonvolatile memory device further includes a second controller configured to receive a device write command and an address, and transmit, to the volatile memory through a first bus, a first read command and the address and a first write command and the address sequentially, and transmit a second write command and the address to the first controller through a second bus, in response to the reception of the device write command and the address.
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公开(公告)号:US20150235056A1
公开(公告)日:2015-08-20
申请号:US14700936
申请日:2015-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjin CHO , Hyunsik KIM
CPC classification number: G06F21/78 , G06F12/1408 , G06F21/72 , H04L9/08 , H04L9/0861 , H04L9/0897
Abstract: A memory controller controlling a nonvolatile memory is provided. The memory controller includes an encryption key feeder configured to feed a cipher key according to a logical address transferred from a host; and an encryption engine configured to perform an encryption operation on data transferred from the host or a decryption operation on data transferred from the nonvolatile memory device, using the cipher key provided from the encryption key feeder.
Abstract translation: 提供控制非易失性存储器的存储器控制器。 存储器控制器包括:加密密钥进给器,配置为根据从主机传送的逻辑地址来提供加密密钥; 以及加密引擎,被配置为对从所述主机传送的数据执行加密操作或对从所述非易失性存储器件传送的数据进行解密操作,所述加密引擎使用从所述加密密钥馈送器提供的密码密钥。
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公开(公告)号:US20240211170A1
公开(公告)日:2024-06-27
申请号:US18365421
申请日:2023-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwansuk JUNG , Sungwon KO , Hoyoung CHANG , Youngjin CHO
CPC classification number: G06F3/0658 , G06F3/061 , G06F3/0659 , G06F3/0673 , G06F11/1008
Abstract: An operation method of a memory controller includes sequentially transmitting a first read command for the first plane and a second read command for the second plane to the nonvolatile memory device, transmitting a first status read command corresponding to the first read command to the nonvolatile memory device, transmitting a first memory access command corresponding to the first read command to the nonvolatile memory device based on first status information, receiving first read data that is output from the nonvolatile memory device, skipping issuing of a status read command corresponding to the second read command and transmitting a second memory access command corresponding to the second read command to the nonvolatile memory device, after receiving the first read data, and receiving second read data that is output from the nonvolatile memory device.
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公开(公告)号:US20240052547A1
公开(公告)日:2024-02-15
申请号:US18210875
申请日:2023-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaebok LEE , Dongpil SEO , Kanghyun LEE , Youngjin CHO
IPC: D06F39/10 , B01D35/143 , D06F34/05
CPC classification number: D06F39/10 , B01D35/143 , D06F34/05 , D06F2105/58
Abstract: A filter apparatus positionable outside a washing machine and connectable to a drain device of the washing machine. The filter apparatus includes a housing; a filter case in the housing and including an inlet and an outlet that are configured so that, with the filter apparatus positioned outside the washing machine and connected to the drain device, water from the drain device is flowable through the inlet into the filter case, and water in the filter case is flowable through the outlet out of the filter case; a filter detachably installable in the filter case so that water flowing through the inlet is flowable through the filter, and then to the outlet; and circuitry between the housing and the filter case and including a controller configured to control the filter apparatus, and a communicator configured to transmit information obtained by the filter apparatus to at least one of the washing machine or a user device.
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公开(公告)号:US20240052545A1
公开(公告)日:2024-02-15
申请号:US18207902
申请日:2023-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjin CHO , Dongpil SEO , Kanghyun LEE , Jaebok LEE
IPC: D06F39/10
CPC classification number: D06F39/10 , D06F2103/42
Abstract: A filter apparatus positionable outside a washing machine and connectable to a drain device of the washing machine, the filter apparatus including a filter case configured so that, with the filter apparatus connected to the drain device, water from the drain device is flowable through the filter case; a filter detachably mountable inside the filter case; a filtering flow path inside the filter case so that water passes through the filter while the filter is mounted inside the filter case; a bypass flow path inside the filter case so that water bypasses the filter; at least one sensor to obtain information about the filter; an opening and closing device to open and close the bypass flow path to guide water flowing into the filter case to the filtering flow path or the bypass flow path; and a controller to control the opening and closing device based on the obtained information.
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公开(公告)号:US20230049967A1
公开(公告)日:2023-02-16
申请号:US17930375
申请日:2022-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eunkyung KIM , Sangheon KIM , Jooyoung JEON , Youngjin CHO , Sehwan KIM , Jeonghui YUN , Yeunwook LIM
Abstract: An electronic device includes a display, a memory, and a processor operatively connected to the display and the memory. The memory stores instructions that, when executed, cause the processor to receive backup data from an external electronic device, identify characteristics of the external electronic device based on the backup data, identify characteristics of the electronic device based on the backup data, at least partially change the backup data based on the characteristics of the electronic device, and display a result of performing a restoring operation based on the at least partially changed backup data on the display.
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公开(公告)号:US20220310827A1
公开(公告)日:2022-09-29
申请号:US17459527
申请日:2021-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yumin KIM , Doyoon KIM , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Youngjin CHO
IPC: H01L29/68 , H01L27/115
Abstract: Disclosed are a memory device including a vertical stack structure and a method of manufacturing the memory device. The memory device includes an insulating structure having a shape including a first surface and a protrusion portion protruding in a first direction from the first surface, a recording material layer covering the protrusion portion along a protruding shape of the protrusion portion and extending to the first surface on the insulating structure a channel layer on the recording material layer along a surface of the recording material layer, a gate insulating layer on the channel layer, and a gate electrode formed at a location on the gate insulating layer to face a second surface which is a protruding upper surface of the protrusion portion, wherein a void exists between the gate electrode and the insulating structure, defined by the insulating structure and the recording material layer.
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