公开(公告)号：US08257799B2

公开(公告)日：2012-09-04

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H05H1/24 ,  C23C16/00

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US20120094149A1

公开(公告)日：2012-04-19

申请号：US13273076

申请日：2011-10-13

Applicant: Sang In Lee ,  Chang Wan Hwang

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/18 ,  B32B9/04

CPC classification number: C23C16/45551 ,  C23C16/403 ,  C23C16/45536

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract translation: 通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。 通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。 减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。