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21.发明授权公开(公告)号：US06507474B1
公开(公告)日：2003-01-14
申请号：US09597126
申请日：2000-06-19
IPC分类号： H01T2300
CPC分类号： G03F7/70616 , G03F7/70941
摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。
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公开(公告)号：US06632283B1
公开(公告)日：2003-10-14
申请号：US09591163
申请日：2000-06-09
IPC分类号： B05C1102
CPC分类号： H01L21/6719 , H01L21/67253
摘要： The present invention relates to illuminating an interior portion of a processing chamber in a semiconductor processing system. A light emitting diode is located in the chamber to illuminate the interior of the chamber to facilitate viewing the interior of the chamber.
摘要翻译： 本发明涉及照射半导体处理系统中的处理室的内部部分。 发光二极管位于腔室内以照亮腔室的内部，以便于观察腔室内部。
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公开(公告)号：US06572252B1
公开(公告)日：2003-06-03
申请号：US09591085
申请日：2000-06-09
IPC分类号： F21V704
CPC分类号： H01L21/67005
摘要： The present invention relates to illuminating an interior portion of a processing chamber in a semiconductor processing system. A fiber optic light source is operatively associated with the processing chamber to illuminate the interior of the chamber to facilitate viewing the interior of the chamber.
摘要翻译： 本发明涉及照射半导体处理系统中的处理室的内部部分。 光纤光源与处理室可操作地相关联以照亮室的内部，以便于观察室的内部。
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24.发明授权公开(公告)号：US06479820B1
公开(公告)日：2002-11-12
申请号：US09557720
申请日：2000-04-25
IPC分类号： G03F730
摘要： In one embodiment, the present invention relates to a method of processing a photoresist on a semiconductor structure, involving the steps of exposing and developing the photoresist; evaluating the exposed and developed photoresist to determine if negative charges exist thereon; contacting the exposed and developed photoresist with a positive ion carrier thereby reducing any negative charges thereon; and evaluating the exposed and developed photoresist with an electron beam. In another embodiment, the present invention relates to a system for processing a patterned photoresist on a semiconductor structure, containing a charge sensor for determining if charges exist on the patterned photoresist and measuring the charges; a means for contacting the patterned photoresist with a positive ion carrier to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned photoresist and the positive ion carrier, temperature of the positive ion carrier, concentration of positive ions in the positive ion carrier, and pressure under which contact between the patterned photoresist and the positive ion carrier occurs; and a device for evaluating the patterned photoresist with an electron beam.
摘要翻译： 在一个实施方案中，本发明涉及一种在半导体结构上处理光致抗蚀剂的方法，包括曝光和显影光致抗蚀剂的步骤; 评估曝光和显影的光致抗蚀剂以确定其上是否存在负电荷; 使曝光和显影的光致抗蚀剂与正离子载体接触，从而减少其上的任何负电荷; 并用电子束评估曝光和显影的光致抗蚀剂。 在另一个实施例中，本发明涉及一种用于处理半导体结构上的图案化光致抗蚀剂的系统，其包含用于确定图案化光致抗蚀剂上是否存在电荷并测量电荷的电荷传感器; 用于使图案化的光致抗蚀剂与正离子载体接触以减少其上的电荷的装置; 控制器，用于设置图案化的光致抗蚀剂和正离子载体之间的接触时间中的至少一个，正离子载体的温度，正离子载体中的正离子的浓度以及图案化的光致抗蚀剂和阳离子的正极之间的接触 发生离子载体; 以及用电子束评估图案化光致抗蚀剂的装置。
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公开(公告)号：US06516528B1
公开(公告)日：2003-02-11
申请号：US09794712
申请日：2001-02-26
申请人： Bryan K. Choo , Bhanwar Singh
发明人： Bryan K. Choo , Bhanwar Singh
IPC分类号： G01B520
CPC分类号： G01B5/207 , B82Y35/00 , G01B5/28 , Y10S977/854 , Y10T29/41
摘要： A system and method are disclosed for determining properties of a feature located at a surface of a substrate. A plurality of probe tips are operable to traverse a surface of the substrate and provide measurement data indicative of topographical features scanned thereby. The measurement data obtained from the plurality of probe tips is aggregated and processed to determine feature properties, such as may include line edge roughness and/or linewidth.
摘要翻译： 公开了一种用于确定位于基底表面的特征的性质的系统和方法。 多个探针尖端可操作以穿过基底的表面，并提供指示由其扫描的形貌特征的测量数据。 从多个探针尖端获得的测量数据被聚合和处理以确定特征属性，例如可以包括线边缘粗糙度和/或线宽。
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26.发明授权Conductive photoresist pattern for long term calibration of scanning electron microscope 失效导电光刻胶图案用于扫描电子显微镜的长期校准公开(公告)号：US06319643B1
公开(公告)日：2001-11-20
申请号：US09596680
申请日：2000-06-19
IPC分类号： G03F900
CPC分类号： G03F7/093 , Y10S430/143
摘要： One aspect of the present invention relates to a method of calibrating a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure having a conductivity of at least about 0.1 S/cm; exposing and developing the conductive photoresist to provide a patterned conductive photoresist; using the semiconductor structure having the patterned conductive photoresist thereon as a standard for calibration; and calibrating the measurement instrument. Another aspect of the present invention relates to a method of reducing electrostatic charges on a standard developed photoresist to improve repeated calibrations of a measurement instrument that uses an electron beam, involving the steps of providing a conductive photoresist on a semiconductor structure; exposing the conductive photoresist with radiation having a wavelength of about 370 nm or less; developing the conductive photoresist to provide a patterned conductive photoresist, wherein the patterned conductive photoresist has a conductivity of at least about 0.01 S/cm; and calibrating the measurement instrument with the semiconductor structure having the patterned conductive photoresist thereon as a standard.
摘要翻译： 本发明的一个方面涉及一种校准使用电子束的测量仪器的方法，包括以下步骤：在具有至少约0.1S / cm的导电率的半导体结构上提供导电光致抗蚀剂; 曝光和显影导电光致抗蚀剂以提供图案化的导电光致抗蚀剂; 使用其上具有图案化导电光刻胶的半导体结构作为校准的标准; 并校准测量仪器。 本发明的另一方面涉及一种降低标准显影光致抗蚀剂上的静电电荷以改善使用电子束的测量仪器的重复校准的方法，包括在半导体结构上提供导电光致抗蚀剂的步骤; 用波长约370nm或更小的辐射曝光导电光致抗蚀剂; 显影所述导电光致抗蚀剂以提供图案化的导电光致抗蚀剂，其中所述图案化导电光致抗蚀剂具有至少约0.01S / cm的电导率; 并用其上具有图案化导电光致抗蚀剂的半导体结构作为标准校准测量仪器。
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27.发明授权System and method of providing improved CD-SEM pattern recognition of structures with variable contrast 失效提供具有可变对比度的结构的改进的CD-SEM模式识别的系统和方法公开(公告)号：US06462343B1
公开(公告)日：2002-10-08
申请号：US09768081
申请日：2001-01-23
申请人： Bryan K. Choo
发明人： Bryan K. Choo
IPC分类号： G01T124
CPC分类号： G06T7/001 , G06T2207/30148
摘要： A system for determining a shape of a feature is provided. The system includes an analysis system providing a signal corresponding to a scan of a portion of a surface of the feature and a stored signal corresponding to a portion of a profile of a similar feature, wherein the profile may have differing contrast levels than scanned portion of the surface of the feature. A processing system is operatively coupled to the analysis system, wherein the processing system is configured to determine the shape of the feature by positioning the signal corresponding to the surface of the feature relative to the stored signal and comparing for regions of substantially constant contrast between the two signals.
摘要翻译： 提供了一种用于确定特征的形状的系统。 该系统包括分析系统，其提供对应于特征的表面的一部分的扫描的信号和对应于类似特征的轮廓的一部分的存储信号，其中该轮廓可以具有与扫描部分的扫描部分不同的对比度 特征的表面。 处理系统可操作地耦合到分析系统，其中处理系统被配置为通过相对于存储的信号定位对应于特征的表面的信号来确定特征的形状，并且比较针对所存储的信号之间的基本上恒定的对比度的区域 两个信号。
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公开(公告)号：US06634805B1
公开(公告)日：2003-10-21
申请号：US09974340
申请日：2001-10-10
申请人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
发明人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： G03B500
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided for applying a developer to a photoresist material wafer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. The developer plate is disposed in very close proximity with respect to the wafer, such that the developer is squeezed between the two plates thereby spreading evenly the developer over the wafer.
摘要翻译： 提供了一种将显影剂施加到设置在半导体衬底上的光致抗蚀剂材料晶片的系统和方法。 显影剂系统和方法采用具有多个用于分配显影剂的孔的显影剂板。 优选地，显影剂板具有与晶片类似的形状的底表面。 显影剂板设置在晶片上方并且在施加显影剂的过程中基本上和/或完全地包围晶片的顶表面。 在晶片和显影剂板的底表面之间形成小的间隙。 晶片和显影剂板形成平行板对，使得间隙可以制得足够小，使得显影剂流体快速填充间隙。 显影剂板相对于晶片非常接近地设置，使得显影剂被挤压在两个板之间，从而将显影剂均匀地铺展在晶片上。
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