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    DEVICES INCLUDING A NEAR FIELD TRANSDUCER (NFT) WITH NANOPARTICLES
    23.
    发明申请
    DEVICES INCLUDING A NEAR FIELD TRANSDUCER (NFT) WITH NANOPARTICLES 审中-公开
    包括具有纳米颗粒的近场传感器（NFT）的装置

    公开(公告)号：US20160133279A1

    公开(公告)日：2016-05-12

    申请号：US14935753

    申请日：2015-11-09

    Applicant: Seagate Technology LLC.

    Inventor： Tong Zhao ,  Justin Brons ,  Steven C. Riemer ,  Michael C. Kautzky ,  Xiaoyue Huang ,  Sarbeswar Sahoo

    IPC: G11B5/31 ,  C23C16/56 ,  C23C14/06 ,  C23C16/40 ,  C23C14/34 ,  C23C14/08 ,  C23C16/455 ,  C23C16/06

    Abstract: Devices that include a near field transducer (NFT) including a crystalline plasmonic material having crystal grains and grain boundaries; and nanoparticles disposed in the crystal grains, on the grain boundaries, or some combination thereof, wherein the nanoparticles are oxides of, lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), hafnium (Hf), germanium (Ge), or combinations thereof; nitrides of zirconium (Zr), niobium (Nb), or combinations thereof; or carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof.

    Abstract translation: 包括具有晶粒和晶界的结晶等离子体激元的近场传感器（NFT）的装置; 和纳米颗粒，其中所述纳米颗粒是镧（La），钡（Ba），锶（Sr），铒（Er），铪（Hf）， 锗（Ge）或其组合; 锆（Zr），铌（Nb）或其组合的氮化物; 或硅（Si），铝（Al），硼（B），锆（Zr），钨（W），钛（Ti），铌（Nb）或其组合的碳化物。

    Devices including at least one adhesion layer
    25.
    发明授权
    Devices including at least one adhesion layer 有权
    装置包括至少一个粘附层

    公开(公告)号：US09263074B2

    公开(公告)日：2016-02-16

    申请号：US14535529

    申请日：2014-11-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Xiaoyue Huang ,  Michael C. Kautzky

    IPC: G11B5/02 ,  G11B5/60 ,  G11B5/31 ,  G11B5/00

    CPC classification number: G11B5/6088 ,  G11B5/314 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one adhesion layer positioned on at least a portion of the at least one external surface, the adhesion layer including arsenic (As), antimony (Sb), selenium (Se), tellurium (Te), polonium (Po), bismuth (Bi), sulfur (S), or combinations thereof.

    Abstract translation: 包括近场换能器（NFT）的装置，所述NFT具有至少一个外表面; 和至少一个位于所述至少一个外表面的至少一部分上的粘合层，所述粘合层包括砷（As），锑（Sb），硒（Se），碲（Te），onium（Po），铋 （Bi），硫（S）或其组合。

    DEVICES INCLUDING AT LEAST ONE ADHESION LAYER
    26.
    发明申请
    DEVICES INCLUDING AT LEAST ONE ADHESION LAYER 审中-公开
    设备包括至少一个粘合层

    公开(公告)号：US20150131419A1

    公开(公告)日：2015-05-14

    申请号：US14535529

    申请日：2014-11-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Xiaoyue Huang ,  Michael C. Kautzky

    IPC: G11B5/127 ,  G11B5/60

    CPC classification number: G11B5/6088 ,  G11B5/314 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one adhesion layer positioned on at least a portion of the at least one external surface, the adhesion layer including arsenic (As), antimony (Sb), selenium (Se), tellurium (Te), polonium (Po), bismuth (Bi), sulfur (S), or combinations thereof.

    Abstract translation: 包括近场换能器（NFT）的装置，所述NFT具有至少一个外表面; 和至少一个位于所述至少一个外表面的至少一部分上的粘合层，所述粘合层包括砷（As），锑（Sb），硒（Se），碲（Te），onium（Po），铋 （Bi），硫（S）或其组合。

    DEVICES INCLUDING AT LEAST ONE ADHESION LAYER AND METHODS OF FORMING ADHESION LAYERS
    27.
    发明申请
    DEVICES INCLUDING AT LEAST ONE ADHESION LAYER AND METHODS OF FORMING ADHESION LAYERS 有权
    包括至少一个粘合层的装置和形成粘合层的方法

    公开(公告)号：US20150131418A1

    公开(公告)日：2015-05-14

    申请号：US14535527

    申请日：2014-11-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Xiaoyue Huang ,  Michael C. Kautzky

    IPC: G11B5/31

    CPC classification number: G11B5/4866 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one adhesion layer positioned on at least a portion of the at least one external surface, the adhesion layer including oxides of yttrium, oxides of scandium, oxides of lanthanoids, oxides of actionoids, oxides of zinc, or combinations thereof.

    Abstract translation: 包括近场换能器（NFT）的装置，所述NFT具有至少一个外表面; 以及位于所述至少一个外表面的至少一部分上的至少一个粘合层，所述粘合层包括钇的氧化物，钪的氧化物，镧系元素的氧化物，起始物的氧化物，锌的氧化物或其组合。

    INTEGRATED PHOTODIODE
    29.
    发明申请
    INTEGRATED PHOTODIODE 审中-公开
    综合光电

    公开(公告)号：US20140264346A1

    公开(公告)日：2014-09-18

    申请号：US14209511

    申请日：2014-03-13

    Applicant: Seagate Technology LLC

    Inventor： Ned Tabat ,  Xiaoyue Huang

    IPC: H01L31/0376 ,  H01L31/18

    CPC classification number: H01L31/03762 ,  G11B5/105 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021 ,  H01L31/1085 ,  H01L31/202 ,  Y02E10/548

    Abstract: In accordance with one implementation, a photodiode may be integrated by thin film processing within a slider. In accordance with another implementation, an apparatus can be configured to include a slider, a first layer of a metal disposed within the slider, a layer of amorphous silicon disposed adjacent the first layer of metal, a second layer of metal disposed adjacent the layer of amorphous silicon, and wherein the first layer of metal, the layer of amorphous silicon, and the second layer of metal are operable as a photodiode.

    Abstract translation: 根据一个实施方案，光电二极管可以通过滑块内的薄膜处理来集成。 根据另一实施方案，一种装置可以被配置为包括滑块，设置在滑块内的金属的第一层，与第一金属层相邻设置的非晶硅层，邻近层的第二金属层 非晶硅，并且其中第一金属层，非晶硅层和第二金属层可用作光电二极管。

    Layered optical waveguide and near field transducer
    30.
    发明授权
    Layered optical waveguide and near field transducer 有权
    分层光波导和近场传感器

    公开(公告)号：US08681595B1

    公开(公告)日：2014-03-25

    申请号：US13795623

    申请日：2013-03-12

    Applicant: Seagate Technology LLC

    Inventor： Xiaoyue Huang ,  Michael C. Kautzky ,  Tong Zhao

    IPC: G11B7/135

    CPC classification number: G02B6/122 ,  G02B6/02 ,  G11B5/314 ,  G11B5/4866 ,  G11B7/12 ,  G11B7/1206 ,  G11B7/124 ,  G11B2005/0021

    Abstract: Waveguides that include a top cladding layer made of a material having an index of refraction n4; a core bilayer structure, the core bilayer structure including a lower index core layer having an index of refraction n3; and a higher index core layer having an index of refraction n1, wherein the higher index core layer includes TiO2 and one or more than one of Nb2O5, CeO2, Ta2O5, ZrO2, HfO2, Y2O3, Sc2O3, MgO, Al2O3 and SiO2, wherein the lower index core layer is adjacent the higher index core layer; a bottom cladding layer made of a material having an index of refraction n2, wherein the waveguide is configured with the higher index core layer of the core bilayer structure adjacent the top cladding layer and the lower index core layer of the core bilayer structure adjacent the bottom cladding layer, and wherein n4 is less than n3 and n1, and n2 is less than n3 and n1.

    Abstract translation: 包括由具有折射率n4的材料制成的顶部覆层的波导; 核心双层结构，核心双层结构包括具有折射率n3的较低折射率核心层; 以及具有折射率n1的高折射率芯层，其中所述较高折射率芯层包括TiO 2和Nb 2 O 5，CeO 2，Ta 2 O 5，ZrO 2，HfO 2，Y 2 O 3，Sc 2 O 3，MgO，Al 2 O 3和SiO 2中的一种或多种，​​其中 较低指数核心层与较高指数核心层相邻; 由具有折射率n2的材料制成的底部包层，其中，所述波导配置有与所述顶部包覆层相邻的所述芯层双层结构的较高折射率的核心层和与所述核心双层结构相邻的底部的下部折射率核心层 包层，其中n4小于n3和n1，n2小于n3和n1。

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