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公开(公告)号：US20150185552A1
公开(公告)日：2015-07-02
申请号：US14645469
申请日：2015-03-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Akio Yamashita , Yumiko Fukumoto , Yuugo Goto
IPC: G02F1/1335 , B32B38/10 , B32B37/12 , G02B5/20 , B32B37/24
CPC classification number: G02F1/133516 , B32B37/12 , B32B37/24 , B32B38/10 , B32B2037/243 , B32B2457/202 , B32B2551/00 , G02B5/201 , G02B5/223
Abstract: To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.
Abstract translation: 提供一种制造形成在塑料基板上的光学膜的方法。 提供一种制造光学膜的方法，包括在第一基板上层压分离层和滤光器的步骤，将滤光器与第一基板分离，将滤光器连接到第二基板。 由于根据本发明制造的光学膜具有柔性，可以设置在具有弯曲表面的部分或显示装置上。 此外，光学膜不能在高温下进行处理，因此可以形成具有高可靠性的高产率的光学膜。 此外，可以形成具有优异抗冲击性能的光学膜。
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公开(公告)号：US09004970B2
公开(公告)日：2015-04-14
申请号：US14074063
申请日：2013-11-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Akio Yamashita , Yumiko Fukumoto , Yuugo Goto
CPC classification number: H01L33/005 , G02F1/1333 , G02F1/133305 , H01L27/1214 , H01L27/1266 , H01L27/15 , H01L27/322 , H01L27/3244 , H01L51/003 , H01L51/524 , H01L51/56 , H01L2227/326 , H01L2933/0025
Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.
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公开(公告)号：US12062405B2
公开(公告)日：2024-08-13
申请号：US18237429
申请日：2023-08-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
CPC classification number: G11C19/184 , H01L27/1222 , H01L27/1225 , H01L27/124 , G09G2310/0275 , G09G2310/0286 , H01L27/0248
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号：US11749365B2
公开(公告)日：2023-09-05
申请号：US17480311
申请日：2021-09-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
CPC classification number: G11C19/184 , H01L27/124 , H01L27/1222 , H01L27/1225 , G09G2310/0275 , G09G2310/0286 , H01L27/0248
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号：US11626637B2
公开(公告)日：2023-04-11
申请号：US16783205
申请日：2020-02-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Minoru Takahashi , Yuugo Goto , Yumiko Yoneda , Takuya Miwa , Ryota Tajima
IPC: H01M50/116 , H01M10/04 , H01M50/543 , H01M50/124
Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery which is resistant to external force is obtained. An opening is provided in a central portion of the secondary battery; and a terminal is formed in the opening. An outer edge of the secondary battery is fixed by thermocompression bonding. In addition, the central portion of the secondary battery is fixed by thermocompression bonding, so that the amount of bending is limited even when the outer edge portion of the secondary battery is bent.
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Patent Agency Ranking
公开(公告)号：US11233266B2
公开(公告)日：2022-01-25
申请号：US16787105
申请日：2020-02-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Minoru Takahashi , Ryota Tajima , Takuya Miwa , Yuugo Goto
IPC: H01M10/04 , H01M50/463 , H01M10/42 , H01M50/10
Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery that is durable even when force is externally applied thereto is provided. A cushioning material is provided in a region surrounded by an exterior body of a secondary battery. Specifically, a cushioning material is provided on the periphery of a current collector such that a sealing portion of an exterior body (film) is located outside the cushioning material.
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公开(公告)号：US10325940B2
公开(公告)日：2019-06-18
申请号：US15347967
申请日：2016-11-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Toru Takayama , Junya Maruyama , Yuugo Goto , Hideaki Kuwabara , Shunpei Yamazaki
IPC: H01L21/00 , H01L27/12 , H01L21/762 , H01L27/32 , B60R1/00 , B60R11/02 , B60R11/04 , H01L21/683 , B60R11/00
Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
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公开(公告)号：US10014068B2
公开(公告)日：2018-07-03
申请号：US13632564
申请日：2012-10-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
CPC classification number: G11C19/184 , G09G2310/0275 , G09G2310/0286 , H01L27/0248 , H01L27/1222 , H01L27/1225 , H01L27/124
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号：US20170207114A1
公开(公告)日：2017-07-20
申请号：US15479311
申请日：2017-04-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/762 , H01L27/12 , H01L21/308
CPC classification number: H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号：US09493119B2
公开(公告)日：2016-11-15
申请号：US14457140
申请日：2014-08-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Toru Takayama , Junya Maruyama , Yuugo Goto , Hideaki Kuwabara , Shunpei Yamazaki
CPC classification number: H01L27/1266 , B60R1/00 , B60R11/0229 , B60R11/04 , B60R2011/004 , B60R2300/202 , B60R2300/802 , H01L21/6835 , H01L21/76251 , H01L27/1218 , H01L27/3244 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68386 , H01L2227/323 , H01L2227/326
Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
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