公开(公告)号：US07039111B2

公开(公告)日：2006-05-02

申请号：US10265720

申请日：2002-10-08

申请人： Seung-jun Lee

发明人： Seung-jun Lee

IPC分类号： H04N7/12

CPC分类号： H04N7/0115 ,  H04N5/147

摘要： A film mode detecting apparatus and method for detecting a film mode by using a periodicity of motion vectors having high autocorrelativity. A motion vector calculating unit adds a size of motion vectors with respect to each field, thereby outputting a first computing value. A peak value eliminating unit detects a peak value from the first computing value, and if the peak value is detected, eliminates the peak value from the first computing value and outputs a resultant value. A mode detecting unit compares an autocorrelation coefficient with a predetermined threshold, thereby outputting a film mode detection signal. The autocorrelation coefficient is obtained from an input signal inputted from the peak value eliminating unit and a delayed signal delayed from the input signal. A mode determining unit determines a film mode when the film mode detection signal is input as often as, or more often than, a first reference value. A scene change detecting unit is further provided for detecting a scene change when the peak value is detected by the maximum value detecting unit, by comparing the detected peak value with a previously detected peak value, and outputting a scene change detection signal to the mode determining unit. In this case, the mode determining unit determines whether it is a film mode or not in accordance with the detection result from the scene change detecting unit based on a second reference value which is greater than the first reference value.

公开(公告)号：US06924520B2

公开(公告)日：2005-08-02

申请号：US10759544

申请日：2004-01-20

申请人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C15/02

摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

摘要翻译： 在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元， 与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中 在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

公开(公告)号：US08194439B2

公开(公告)日：2012-06-05

申请号：US12923376

申请日：2010-09-17

申请人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/1697 ,  G11C8/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements.

摘要翻译： 一种自旋传递转矩磁随机存取存储器（STT-MRAM），包括：存储单元和参考单元，被配置为当读取存储在存储单元中的数据时作为参考。 存储单元包括：第一磁隧道结（MTJ）元件和连接到第一MTJ元件的第一晶体管。 参考单元包括：并联连接的第二和第三MTJ元件; 以及分别连接到第二和第三MTJ元件的第二和第三晶体管。 STT-MRAM还包括具有写入电路的控制电路，该写入电路被配置为向第二和第三MTJ元件提供具有相反方向的写入电流。

公开(公告)号：US08187967B2

公开(公告)日：2012-05-29

申请号：US12458675

申请日：2009-07-20

申请人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

发明人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

IPC分类号： H01L21/4763

CPC分类号： H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11568

摘要： A method of manufacturing a non-volatile memory device providing a semiconductor layer in which a cell region and a peripheral region are defined, sequentially forming a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer on the cell region and the peripheral region, forming a trench for exposing a portion of the first conductive layer of the peripheral region, wherein the trench is formed by removing portions of the second conductive layer and the second insulating layer in the peripheral region, performing a trimming operation for removing portions of the second conductive layer and the second insulating layer of the cell region, forming a spacer on a side surface of the trench, and forming a silicide layer that is electrically connected to the first conductive layer, wherein the silicide layer is formed by performing a silicidation process on the spacer.

摘要翻译： 一种制造提供其中限定了单元区域和外围区域的半导体层的非易失性存储器件的方法，其顺序地形成在第一绝缘层，第一导电层，第二绝缘层和第二导电层上 形成用于暴露周边区域的第一导电层的一部分的沟槽，其中通过去除周边区域中的第二导电层和第二绝缘层的部分形成沟槽，进行修整 用于去除所述第二导电层和所述单元区域的所述第二绝缘层的部分的工作，在所述沟槽的侧表面上形成间隔物，以及形成电连接到所述第一导电层的硅化物层，其中所述硅化物层为 通过在间隔物上进行硅化处理而形成。

公开(公告)号：US08144503B2

公开(公告)日：2012-03-27

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US08060001B2

公开(公告)日：2011-11-15

申请号：US12172425

申请日：2008-07-14

申请人： Seung-jun Lee

发明人： Seung-jun Lee

IPC分类号： G03G15/20

CPC分类号： G03G15/2053 ,  G03G2215/2035

摘要： A fusing unit, and an image forming apparatus including the same, includes: a driving roller; a belt disposed to be driven by the driving roller; a nip plate disposed along a lengthwise direction of the driving roller with the belt being disposed between the driving roller and the nip plate, the nip plate being pressed toward the driving roller to form a fusing nip; a heat radiating body disposed along the lengthwise direction to heat the nip plate by heat conduction; and a heat radiating body pressing member to press the heat radiating body toward the nip plate to prevent the heat radiating body from being spaced from the nip plate due to thermal deformation. The image forming apparatus includes: an image forming unit to form an image on a printing medium with a developer; and the fusing unit.

摘要翻译： 定影单元和包括该定影单元的图像形成装置包括：驱动辊; 设置成由所述驱动辊驱动的带; 夹持板沿驱动辊的长度方向设置，带被设置在驱动辊和夹持板之间，夹持板被压向驱动辊以形成定影辊隙; 沿着长度方向设置的热辐射体，通过热传导加热夹持板; 以及热辐射体按压部件，用于将热辐射体朝向夹持板挤压，以防止热辐射体由于热变形而与夹持板间隔开。 图像形成装置包括：图像形成单元，用于在具有显影剂的打印介质上形成图像; 和定影单元。

公开(公告)号：US07813688B2

公开(公告)日：2010-10-12

申请号：US11776078

申请日：2007-07-11

申请人： Dong-jin Seol ,  Seung-jun Lee

发明人： Dong-jin Seol ,  Seung-jun Lee

IPC分类号： G03G15/20

CPC分类号： G03G15/2057

摘要： A fusing roller which is heated by a heat source, includes: a core member; a first primer which is formed on a circumference of the core member; an elastic layer which is formed on a circumference of the first primer, and adhered on the circumference of the core member by the first primer; and a basic coating layer which is disposed between the core member and the first primer, and chemically combined with the first primer.

摘要翻译： 由热源加热的定影辊包括：芯构件; 形成在所述芯部件的圆周上的第一底漆; 弹性层，其形成在第一底漆的圆周上，并且通过第一底漆粘附在芯构件的圆周上; 以及设置在所述芯构件和所述第一底漆之间并与所述第一底漆化学组合的碱性涂层。

公开(公告)号：US20080170895A1

公开(公告)日：2008-07-17

申请号：US11776078

申请日：2007-07-11

申请人： Dong-jin SEOL ,  Seung-jun Lee

发明人： Dong-jin SEOL ,  Seung-jun Lee

IPC分类号： G03G15/20 ,  B05D3/10

CPC分类号： G03G15/2057

摘要： A fusing roller which is heated by a heat source, includes: a core member; a first primer which is formed on a circumference of the core member; an elastic layer which is formed on a circumference of the first primer, and adhered on the circumference of the core member by the first primer; and a basic coating layer which is disposed between the core member and the first primer, and chemically combined with the first primer.

摘要翻译： 由热源加热的定影辊包括：芯构件; 形成在所述芯部件的圆周上的第一底漆; 弹性层，其形成在第一底漆的圆周上，并且通过第一底漆粘附在芯构件的圆周上; 以及设置在所述芯构件和所述第一底漆之间并与所述第一底漆化学组合的碱性涂层。

公开(公告)号：US20080013994A1

公开(公告)日：2008-01-17

申请号：US11699356

申请日：2007-01-30

申请人： Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol

发明人： Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol

IPC分类号： G03G15/20

CPC分类号： G03G15/2053

摘要： A fuser roller and a fusing unit including the fuser roller are to be used in an image-forming apparatus. The fuser roller includes a tubular fusing portion, an inner tube, and a heating portion. The inner tube is inserted into the fusing portion. The heating portion is installed to enclose an outer surface of the inner tube and press against an inner surface of the fusing portion, and to radiate heat. The fusing portion is surface treated to have a roughness factor of Ra 3-5μm.

摘要翻译： 在图像形成装置中使用定影辊和包括定影辊的定影单元。 定影辊包括管状定影部，内管和加热部。 将内管插入定影部。 加热部分安装成封闭内管的外表面并压靠定影部分的内表面并辐射热量。 定影部分被表面处理以具有Ra≤3.5μm的粗糙度因子。

公开(公告)号：US20050232003A1

公开(公告)日：2005-10-20

申请号：US11152346

申请日：2005-06-15

申请人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C15/02

摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

摘要翻译： 在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元， 与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中 在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。